Dual hydrogen barrier layer for memory devices integrated with low density film for logic structures and methods of fabrication

ABSTRACT

A device includes, in a first region, a first conductive interconnect, an electrode structure on the first conductive interconnect, where the electrode structure includes a first conductive hydrogen barrier layer and a first conductive fill material. A memory device including a ferroelectric material or a paraelectric material is on the electrode structure. A second dielectric includes an amorphous, greater than 90% film density hydrogen barrier material laterally surrounds the memory device. A via electrode including a second conductive hydrogen barrier material is on at least a portion of the memory device. A second region includes a conductive interconnect structure embedded within a less than 90% film density material.

CLAIM OF PRIORITY

This Application is a Continuation Application of, and claims thebenefit of priority to, U.S. patent application Ser. No. 17/550,904,filed Dec. 14, 2021, and titled “Dual Hydrogen Barrier Layer for MemoryDevices,” which is incorporated by reference in its entirety for allpurposes.

BACKGROUND

Integration of capacitor devices including (ferroelectric orparaelectric materials) on a same plane as interconnects of logicdevices can be challenging. The capacitor devices include materials thathave a variety of thicknesses and are prone to hydrogen damage. Whenspacing between devices are scaled formation of barrier layers can bechallenging. As such alternate methods to form barriers around capacitordevices and alternative enabling integration methods essential forrealizing a high-density capacitor array including ferroelectric andparaelectric materials are desirable.

BRIEF DESCRIPTION OF THE DRAWINGS

The material described herein is illustrated by way of example and notby way of limitation in the accompanying figures. For simplicity andclarity of illustration, elements illustrated in the figures are notnecessarily drawn to scale. For example, the dimensions of some elementsmay be exaggerated relative to other elements for clarity. Also, variousphysical features may be represented in their simplified “ideal” formsand geometries for clarity of discussion, but it is nevertheless to beunderstood that practical implementations may only approximate theillustrated ideals. For example, smooth surfaces and squareintersections may be drawn in disregard of finite roughness,corner-rounding, and imperfect angular intersections characteristic ofstructures formed by nanofabrication techniques. Further, whereconsidered appropriate, reference labels have been repeated among thefigures to indicate corresponding or analogous elements.

FIG. 1A is a cross-sectional illustration of a device structureincluding a plurality of memory devices in a memory region adjacent tointerconnect structures in a logic region, where each memory device isprotected by a combination of conductive and insulative hydrogenbarriers, in accordance with an embodiment of the present disclosure.

FIG. 1B is a cross-sectional illustration of layers within a memorydevice, where each memory device is protected by a combination ofconductive and insulative hydrogen barriers, in accordance with anembodiment of the present disclosure.

FIG. 1C is an illustrative embodiment of the device structure where avia electrode extends over an entire uppermost surface of the memorydevice.

FIG. 1D is a cross-sectional illustration of a portion of the devicestructure in FIG. 1A, in an embodiment where a via electrode extends ona sidewall portion below the uppermost surface of the memory device.

FIG. 1E is a cross-sectional illustration of a portion of the devicestructure in FIG. 1A, where a conductive hydrogen barrier via matches acontour of the uppermost surface of the memory device, in accordancewith an embodiment of the present disclosure.

FIG. 1F is a cross-sectional illustration of the device structure inFIG. 1A, in an embodiment where the spacing between two adjacent memorydevices is less than a spacing between electrode structures directlybelow two adjacent memory devices.

FIG. 1G is a cross-sectional illustration of an embodiment of anelectrode structure that includes a liner layer between a conductivehydrogen barrier and a conductive fill material.

FIG. 1H is a cross-sectional illustration of an electrode structurewhere a conductive hydrogen barrier layer as a top layer above aconductive fill material, in accordance with an embodiment of thepresent disclosure.

FIG. 1I is a cross-sectional illustration of the device structure inFIG. 1H in an embodiment where the spacing between two adjacent memorydevices is less than a spacing between electrode structures coupled witha respective memory device.

FIG. 1J is an illustrative embodiment of the structure in FIG. 1A, wherean encapsulation layer is inserted between the dielectric and memorydevice.

FIG. 2A is a cross-sectional illustration of a device structure, where atrench electrode is integrated with a via electrode above a memorydevice, in accordance with an embodiment of the present disclosure.

FIG. 2B is a cross-sectional illustration of a device structure, where atrench electrode is integrated with a via electrode above a memorydevice, in accordance with an embodiment of the present disclosure.

FIG. 3A is an isometric illustration of the device structure in FIG. 1A,where conductive interconnect that is coupled with a respective trenchcapacitor has a discrete island structure, in accordance with anembodiment of the present disclosure.

FIG. 3B is an isometric illustration of the device structure in FIG. 1A,where the conductive interconnect is a trench interconnect coupling aplurality of memory devices through a respective electrode structure, inaccordance with an embodiment of the present disclosure.

FIG. 3C is a cross sectional illustration, though a line A-A′ of thedevice structure in FIG. 3B.

FIG. 3D is an isometric illustration of the device structure in FIG. 3A,where the conductive interconnects are discrete island structures, butthe electrode structure is a trench electrode that couples multiplememory devices, in accordance with an embodiment of the presentdisclosure.

FIG. 4A is an isometric illustration of the device structure in FIG. 2A,in accordance with an embodiment of the present disclosure.

FIG. 4B is a cross sectional illustration, though a line A-A′ of thedevice structure in FIG. 4B, in accordance with an embodiment of thepresent disclosure.

FIG. 5 is a flow diagram to form memory devices with dual hydrogenbarrier layers in a memory region and conductive interconnects in alogic region, in accordance with some embodiments of the presentdisclosure.

FIG. 6A is a cross-sectional illustration of a plurality of conductiveinterconnects formed within a first dielectric above a substrate, inaccordance with an embodiment of the present disclosure.

FIG. 6B is a cross-sectional illustration of the structure in FIG. 6Afollowing the process to deposit an etch stop layer on conductiveinterconnects and on the first dielectric.

FIG. 7A is a cross-sectional illustration of the structure in FIG. 7Afollowing the process to etch openings in etch stop layer to formelectrode structures.

FIG. 7B is an isometric illustration of a portion of the structure inFIG. 7A, in accordance with an embodiment of the present disclosure.

FIG. 7C is an isometric illustration of a portion of the structure inFIG. 7A, in accordance with an embodiment of the present disclosure.

FIG. 7D is an isometric illustration of a portion of the structure inFIG. 7A, in accordance with an embodiment of the present disclosure.

FIG. 8A is a cross-sectional illustration of the structure in FIG. 7Afollowing the process to deposit one or more electrode materials on theconductive interconnects and on etch stop layer.

FIG. 8B is a cross-sectional illustration of the structure in FIG. 8Afollowing the process to planarize a fill material and a conductivehydrogen barrier material to form an electrode structures above aconductive interconnect in the memory region.

FIG. 8C is a cross-sectional illustration of the structure in FIG. 8Bfollowing the process to form material layer stack on the electrodestructure and on the etch stop layer.

FIG. 8D is a cross-sectional illustration of the structure in FIG. 8Cfollowing the process to pattern the material layer stack to form amemory device above an electrode structure.

FIG. 9A is a cross-sectional illustration of the structure in FIG. 8Dfollowing the process to deposit a second and planarize a seconddielectric on the memory devices.

FIG. 9B is a cross-sectional illustration of a portion of the structurein FIG. 9A, illustrating a shape of resulting conductive fill materialafter forming the memory device and depositing the second dielectric, inaccordance with an embodiment of the present disclosure.

FIG. 9C is a cross-sectional illustration of a portion of the structurein FIG. 9A, illustrating a shape of resulting conductive fill materialafter forming the memory device and depositing the second dielectric, inaccordance with an embodiment of the present disclosure.

FIG. 9D is a cross-sectional illustration of a portion of the structurein FIG. 9A, illustrating a shape of the etch stop layer after formingthe memory device and depositing the second dielectric, in accordancewith an embodiment of the present disclosure.

FIG. 9E is a cross-sectional illustration of a portion of the structurein FIG. 9A, illustrating a shape of the etch stop layer after formingthe memory device and depositing the second dielectric, in accordancewith an embodiment of the present disclosure.

FIG. 10A is a cross-sectional illustration of the structure in FIG. 9Afollowing the process to form openings in the second dielectric througha first mask.

FIG. 10B is a cross-sectional illustration of the structure in FIG. 10Afollowing the process to deposit materials to form via electrodes.

FIG. 10C is a cross-sectional illustration of the structure in FIG. 10Bfollowing the process to planarize and form a via on a memory device andfollowing the process to remove the second dielectric from the logicregion.

FIG. 10D is a cross-sectional illustration of the structure in FIG. 10Cfollowing the process to deposit a third dielectric in the logic regionand planarizing the third dielectric.

FIG. 10E is a cross-sectional illustration of the structure in FIG. 10Dfollowing the process to form a second mask on the first and seconddielectrics, and form hanging trench openings in the third dielectric,in accordance with an embodiment of the present disclosure.

FIG. 10F is a cross-sectional illustration of the structure in FIG. 10Efollowing the process to form a form a via mask within a hanging trenchopening above a conductive interconnect in the logic region.

FIG. 10G is a cross-sectional illustration of the structure in FIG. 10Ffollowing the process to etch dielectric to form a via opening below ahanging trench opening in the logic region.

FIG. 10H is a cross-sectional illustration of the structure in FIG. 10Gfollowing the process to remove mask utilized to form via opening withinthe hanging trench and deposit a conductive material into the openingsto form a via structure, and metal lines in the hanging trench openings.

FIG. 11A is a cross-sectional illustration of the structure in FIG. 10Dfollowing the process to form a via electrode on the memory device, inaccordance with an embodiment of the present disclosure.

FIG. 11B is a cross-sectional illustration of the structure in FIG. 11Afollowing the process to form a via structure in the logic region, inaccordance with an embodiment of the present disclosure.

FIG. 11C is a cross-sectional illustration of the structure in FIG. 11Bfollowing the process to deposit a fourth dielectric on the second andthird dielectric.

FIG. 11D is a cross-sectional illustration of the structure in FIG. 11Cfollowing the process to form openings to form electrodes in the memoryregion and metal lines in the logic region.

FIG. 11E is a cross-sectional illustration of the structure in FIG. 11Dfollowing the process to form an electrode on the via electrode.

FIG. 11F is a cross-sectional illustration of the structure in FIG. 11Dfollowing the process to form a trench electrode to couple a pluralityof via electrodes.

FIG. 12A is a cross-sectional illustration of the structure in FIG. 10Dfollowing the process to planarize the third dielectric, in accordancewith an embodiment of the present disclosure.

FIG. 12B is a cross-sectional illustration of the structure in FIG. 12Afollowing the process to form a via structure, and metal lines in thelogic region, in accordance with an embodiment of the presentdisclosure.

FIG. 12C is a cross-sectional illustration of the structure in FIG. 12Bfollowing the process to form an electrode on a respective viaelectrode.

FIG. 13A is a cross-sectional illustration of the structure in FIG. 11C,in an embodiment where via electrodes are not yet fabricated.

FIG. 13B is a cross-sectional illustration of an embodiment of thestructure in FIG. 13A following the formation of trench openings in thefourth dielectric above a respective memory device.

FIG. 13C is a cross-sectional illustration of the structure in FIG. 13Bfollowing the process to etch the second dielectric to form a viaopening below the trench opening in the memory region.

FIG. 13D is a cross-sectional illustration of the structure in FIG. 13Cfollowing the process to fabricate a contact electrode on the viaelectrode, above a respective memory device.

FIG. 14A is an illustrative embodiment of the structure in FIG. 12B,prior to the formation of via electrodes above memory device.

FIG. 14B is an illustrative embodiment of the structure in FIG. 14A,following the process to form a plurality of openings in the third andin the second dielectric in the memory region, in accordance with anembodiment of the present disclosure.

FIG. 14C is a cross-sectional illustration of the structure in FIG. 14Bfollowing the process to fabricate a trench electrode on a via electrodeabove a respective memory device.

FIG. 15A is a cross-sectional illustration of the structure in FIG. 11E,in an embodiment where via electrodes and electrodes on top of viaelectrodes are not yet fabricated.

FIG. 15B is a cross-sectional illustration of the structure in FIG. 15Afollowing the process to form via electrode having a first portionwithin the second dielectric a second portion within the fourthdielectric, in accordance with an embodiment of the present disclosure.

FIG. 15C is a cross-sectional illustration of the structure in FIG. 15Bfollowing the process to form an opening between adjacent via electrodesthat are spaced apart along an x-direction.

FIG. 15D is a cross-sectional illustration of the structure in FIG. 15Cfollowing the process to form a conductive bridge between adjacent viaelectrodes. In the illustrative embodiment, the process utilized to formthe conductive bridge includes materials and processes utilized tofabricate via electrode, described above.

FIG. 16A is a plan view of the structure in FIG. 15D, in accordance withan embodiment of the present disclosure.

FIG. 16B is a plan view of the structure in FIG. 15D, in accordance withan embodiment of the present disclosure.

FIG. 16C is a plan view of the structure in FIG. 15D, in accordance withan embodiment of the present disclosure.

FIG. 17A is an embodiment of the structure in FIG. 7A, where a surfaceof the first dielectric may be recessed relative to an uppermost surfaceof the conductive interconnect, in accordance with an embodiment of thepresent disclosure.

FIG. 17B is a cross-sectional illustration of the structure in FIG. 17Afollowing the process to form an electrode structure having a portionbelow an uppermost surface of the conductive interconnect, in accordancewith an embodiment of the present disclosure

FIG. 18A is a cross-sectional illustration of the structure in FIG. 7Afollowing the formation of conductive fill material within openings, inaccordance with an embodiment of the present disclosure.

FIG. 18B is a cross-sectional illustration of the structure in FIG. 18Afollowing the process to deposit a conductive hydrogen barrier layer onthe conductive fill material.

FIG. 18C is a cross-sectional illustration of the structure in FIG. 18Bfollowing the process to form a conductive hydrogen barrier on theconductive fill material.

FIG. 19A is a cross-sectional illustration of the structure in FIG. 10Dfollowing the process to deposit the fourth dielectric on the second andthe third dielectric and following the process to form hanging trenchopenings in the fourth dielectric in the logic region, in accordancewith an embodiment of the present disclosure.

FIG. 19B is a cross-sectional illustration of the structure in FIG. 19Afollowing the formation of a via opening within a hanging trenchopening, in accordance with an embodiment of the present disclosure.

FIG. 19C is a cross-sectional illustration of the structure in FIG. 19Afollowing the process to form a via structure in the via opening, andmetal lines in the hanging trench openings.

FIG. 19D is a cross-sectional illustration of the structure in FIG. 19Cfollowing the formation of openings in the fourth dielectric above arespective memory device.

FIG. 19E is a cross-sectional illustration of the structure in FIG. 19Dfollowing the process to form an electrode on respective via electrodes.

FIG. 20A is a cross-sectional illustration of the structure in FIG. 10Dfollowing the process to deposit the fourth dielectric and form aplurality of openings in the fourth dielectric.

FIG. 20B is a cross-sectional illustration of the structure in FIG. 20Afollowing the process to form a via opening within a hanging trenchopening.

FIG. 20C is a cross-sectional illustration of the structure in FIG. 20Bfollowing the process to form an electrode above a respective viaelectrode, and a via structure and metal lines in the logic region.

FIG. 21A is an illustrative embodiment of the structure in FIG. 13A,where metal lines and via structure in the logic region are fabricatedby a method described in association with FIGS. 19A, 19B and 19C.

FIG. 21B is a cross-sectional illustration of the structure in FIG. 21Afollowing the process to form electrode structure described inassociation with FIGS. 13A-13D.

FIG. 22A is a cross-sectional illustration of the structure in FIG. 8Dfollowing the process to deposit encapsulation layer on the memorydevice.

FIG. 22B is a cross-sectional illustration of the structure in FIG. 22Afollowing the process to form an opening in the second dielectric and inthe encapsulation layer.

FIG. 22C is a cross-sectional illustration of the structure in FIG. 22Bfollowing the process to form via electrodes in the memory region.

FIG. 22D is a cross-sectional illustration of the structure in FIG. 22Cfollowing the process to form via structure and metal lines in the logicregion.

FIG. 23 illustrates a computing architecture with a coherent cache ormemory-side buffer chiplet that includes a memory controller, whereinthe coherent cache or memory-side buffer chiplet is coupled to anaccelerator, a processor, and a memory, in accordance with someembodiments.

FIG. 24 illustrates an architecture of the coherent cache or memory-sidebuffer chiplet with multiple controllers and multiple cache banks, inaccordance with some embodiments.

FIG. 25 illustrates an apparatus comprising memory and correspondinglogic, wherein the memory comprises ferroelectric (FE) memory bit-cells,in accordance with some embodiments.

FIG. 26 illustrates a high-level architecture of an artificialintelligence (AI) machine comprising a compute die positioned on top ofa memory die, in accordance with some embodiments.

FIG. 27 illustrates a 3-input majority gate using non-linear inputcapacitors, in accordance with some embodiments.

FIG. 28 illustrates a complex logic gate implemented using a 5-inputmajority gate, in accordance with some embodiments.

DETAILED DESCRIPTION

A dual hydrogen barrier for memory devices and methods of fabricationare described. While various embodiments are described with reference toFeRAM or paraelectric RAM, capacitive structures formed herein can beused for any application where a capacitor is desired. For example, thecapacitive structure can be used for fabricating ferroelectric based orparaelectric based majority gate, minority gate, and/or threshold gate.In the following description, numerous specific details are set forth,such as structural schemes and detailed fabrication methods to provide athorough understanding of embodiments of the present disclosure. It willbe apparent to one skilled in the art that embodiments of the presentdisclosure may be practiced without these specific details. In otherinstances, well-known features, such as process equipment and deviceoperations, are described in lesser detail to not unnecessarily obscureembodiments of the present disclosure. Furthermore, it is to beunderstood that the various embodiments shown in the Figures areillustrative representations and are not necessarily drawn to scale.

In some instances, in the following description, well-known methods anddevices are shown in block diagram form, rather than in detail, to avoidobscuring the present disclosure. Reference throughout thisspecification to “an embodiment” or “one embodiment” or “someembodiments” means that a particular feature, structure, function, orcharacteristic described in connection with the embodiment is includedin at least one embodiment of the disclosure. Thus, the appearances ofthe phrase “in an embodiment” or “in one embodiment” or “someembodiments” in various places throughout this specification are notnecessarily referring to the same embodiment of the disclosure.Furthermore, the particular features, structures, functions, orcharacteristics may be combined in any suitable manner in one or moreembodiments. For example, a first embodiment may be combined with asecond embodiment anywhere the particular features, structures,functions, or characteristics associated with the two embodiments arenot mutually exclusive.

As used in the description and the appended claims, the singular forms“a”, “an” and “the” are intended to include the plural forms as well,unless the context clearly indicates otherwise. It will also beunderstood that the term “and/or” as used herein refers to andencompasses all possible combinations of one or more of the associatedlisted items.

The terms “coupled” and “connected,” along with their derivatives, maybe used herein to describe functional or structural relationshipsbetween components. These terms are not intended as synonyms for eachother. Rather, in particular embodiments, “connected” may be used toindicate that two or more elements are in direct physical, optical, orelectrical contact with each other. “Coupled” may be used to indicatedthat two or more elements are in either direct or indirect (with otherintervening elements between them) physical, electrical or in magneticcontact with each other, and/or that the two or more elements co-operateor interact with each other (e.g., as in a cause an effectrelationship).

The terms “over,” “under,” “between,” and “on” as used herein refer to arelative position of one component or material with respect to othercomponents or materials where such physical relationships arenoteworthy. For example, in the context of materials, one material ormaterial disposed over or under another may be directly in contact ormay have one or more intervening materials. Moreover, one materialdisposed between two materials may be directly in contact with the twolayers or may have one or more intervening layers. In contrast, a firstmaterial “on” a second material is in direct contact with that secondmaterial/material. Similar distinctions are to be made in the context ofcomponent assemblies. As used throughout this description, and in theclaims, a list of items joined by the term “at least one of” or “one ormore of” can mean any combination of the listed terms.

The term “adjacent” here generally refers to a position of a thing beingnext to (e.g., immediately next to or close to with one or more thingsbetween them) or adjoining another thing (e.g., abutting it).

The term “signal” may refer to current signal, voltage signal, magneticsignal, or data/clock signal.

The term “device” may generally refer to an apparatus according to thecontext of the usage of that term. For example, a device may refer to astack of layers or structures, a single structure or layer, a connectionof various structures having active and/or passive elements, etc.Generally, a device is a three-dimensional structure with a plane alongthe x-y direction and a height along the z direction of an x-y-zCartesian coordinate system. The plane of the device may also be theplane of an apparatus which comprises the device.

Unless otherwise specified in the explicit context of their use, theterms “substantially equal,” “about equal” and “approximately equal”mean that there is no more than incidental variation between two thingsso described. In the art, such variation is typically no more than+/−10% of a predetermined target value.

The terms “left,” “right,” “front,” “back,” “top,” “bottom,” “over,”“under,” and the like in the description and in the claims, if any, areused for descriptive purposes and not necessarily for describingpermanent relative positions. For example, the terms “over,” “under,”“front side,” “back side,” “top,” “bottom,” “over,” “under,” and “on” asused herein refer to a relative position of one component, structure, ormaterial with respect to other referenced components, structures, ormaterials within a device, where such physical relationships arenoteworthy. These terms are employed herein for descriptive purposesonly and predominantly within the context of a device z-axis andtherefore may be relative to an orientation of a device. Hence, a firstmaterial “over” a second material in the context of a figure providedherein may also be “under” the second material if the device is orientedupside-down relative to the context of the figure provided. Similardistinctions are to be made in the context of component assemblies.

The term “between” may be employed in the context of the z-axis, x-axisor y-axis of a device. A material that is between two other materialsmay be in contact with one or both of those materials. In anotherexample, a material that is between two or other material may beseparated from both of the other two materials by one or moreintervening materials. A material “between” two other materials maytherefore be in contact with either of the other two materials. Inanother example, a material “between” two other materials may be coupledto the other two materials through an intervening material. A devicethat is between two other devices may be directly connected to one orboth of those devices. In another example, a device that is between twoother devices may be separated from both of the other two devices by oneor more intervening devices.

Capacitors with a wide variety of materials have been implemented formemory (random access memory or RAM) applications. Perovskite materialshave been implemented in capacitors such for high density FeRAMapplications owing to their low power consumption and high on/off ratio.Perovskite FeRAM devices (herein FeRAM devices) are also desirable overother forms of memory such as magnetic tunnel junction (MTJ)-baseddevices due to the relatively low number of layers within a devicecompared to the MTJ. A typical FeRAM device may be fully operationalwith three layers, where a ferroelectric dielectric is contained betweentwo electrode layers. The electrode layers may also include Perovskitematerials to enable lattice matching and reduction in electricalresistance. Introduction of lead-free Perovskite materials offeradditional environmental benefits without sacrificing deviceperformance.

However, FeRAM devices including lead-free Perovskite materials areprone to damage from reaction with hydrogen during processing.Specifically, the damage may be result of hydrogen traveling along grainboundaries between or along electrodes coupled with two terminals of aFeRAM device. Hydrogen can cause reduction when it reacts with the oneor more materials of the FeRAM device, such the electrodes or theferroelectric material itself. Sources of hydrogen during fabricationarise from anneal operations carried to tie up dangling bonds. However,FeRAM devices can lose their polarization hysteresis characteristics asa result of hydrogen reduction.

In some embodiments, the capacitor devices have a planar structure wherethe individual layers are sequentially layered, one on top of another,where the layers are patterning into cylinder or rectangular shapes.Thus, it is highly desirable to protect capacitor sidewalls, top andbottom surfaces from reacting with hydrogen. In some embodiments,solutions against hydrogen diffusion include forming an insulatingbarrier layer, such as for example, silicon nitride, to protectsidewalls and top surfaces. A contact electrode at a top of the FeRAMdevice may be formed by piercing through the insulating barrier layerand exposing one or more top electrode materials. The barrier layerthemselves may be further surrounded by additional insulating materialsuch as an interlayer dielectric (ILD). However, the contact electrodeformed may be wider than a width of a FeRAM device and can result inerosion of spacer. Spacer erosion can lead to exposure to the adjacentILD material. ILD material such as silicon oxide or silicon oxide dopedwith carbon in general do not act as a hydrogen diffusion barrier, andare less desirable directly adjacent to one or more layers of the memorydevice.

In other examples, hydrogen may diffuse through one or more materials ofthe contact electrode towards the FeRAM device stack through a topelectrode. To protect against hydrogen diffusion through a top surfaceof the top electrode noble metals have been implemented as part of thecontact electrode structure. However, noble metals normally havecrystalline structures due to strong metallic bonding. Hence theiramorphous phase is thermodynamically unstable favoring transformationinto a crystalline phase.

Furthermore, it is to be appreciated that hydrogen can also diffuse fromlayers below a bottom electrode of the ReRAM device. Typically, thebottom electrode is physically isolated from a conductive interconnectby at least one transition electrode. The conductive interconnect may belaterally surrounded by an ILD. The transition electrode may belaterally surrounded by an insulator layer that can act as a barrieragainst hydrogen diffusion as well as provide etch stop capability whilepatterning the ReRAM stack. The insulator layer is typically formedabove the ILD and the conductive interconnect. The interface between thetransition electrode and the conductive interconnect, can be a pathwayfor hydrogen diffusion. Depending on a width of the transition electroderelative to the conductive interconnect. the transition electrode may bein contact with the ILD adjacent to the conductive interconnect.

The inventors have devised a scheme to implement a dual hydrogen barrierthat includes an insulative hydrogen barrier material directly adjacentto the memory device and a conductive hydrogen barrier that isintegrated as part of the contact electrode. In some embodiments, thecontact electrode may have a shape of a via that include a conductivehydrogen barrier having a first portion directly in contact with thememory device and a second portion that laterally surrounds a conductive(contact) material. The conductive contact material may further includeone or more layers. The contact electrode may extend over a portion oran entire uppermost surface of the memory device.

To provide a barrier against hydrogen diffusion towards a bottomelectrode, the transition electrode may also include a conductivehydrogen barrier material. The structure of the transition electrode maydepend on the size of the memory device relative to the transitionelectrode. In embodiments, the transition electrode may include aconductive hydrogen barrier laterally surrounding a conductive material.In other embodiments, the transition electrode may include conductivehydrogen barrier directly across a top portion and in direct contactwith the memory device.

To provide a barrier against hydrogen diffusion directly into sidewallsof the memory device, a dielectric that is amorphous, having a high filmdensity (a film density above 90% of theoretical material density orfilm density) and is electrically insulating, may be directly in contactwith the sidewalls of the memory device. Furthermore, when memorydevices are integrated in a high density array, the space between thedevices may not be large enough to deposit a barrier liner (spacer) aswell as an ILD. In some such instances the high film density-dielectricis present over the entire memory region. Memory devices in the memoryregion may be directly adjacent to a logic region within a memory level,for system functionality. In particular, the ferroelectric devices maybe directly adjacent to routing interconnects in the logic region. Tominimize line capacitance, the routing interconnects are embedded withina low dielectric constant interlayer dielectric (ILD), where the ILD hasa low film density (less than 90% film density) or a high porositymaterial.

The ferroelectric capacitors may be integrated with transistors in amemory region of a substrate. For example, ferroelectric capacitors maybe on a memory level above a transistor level. There may be one or morelayers of conductive interconnects between the ferroelectric capacitors(herein ferroelectric devices) and transistors in the transistor level.

A vertical thickness or height of a single level of routinginterconnects (herein interconnect level) is determined by a combinedthickness of one or more stacked vias and metal lines within the routinginterconnects and is substantially fixed. To minimize fabrication cost,it is highly desirable to match a height of the memory level with aheight of a single level of routing interconnects. The single level mayinclude one or more stacked conductive interconnects such as a metalline on a via, or a via on a via.

For manufacturability ferroelectric devices may be generally formeddirectly above conductive interconnects that are coupled withtransistors on a lower level. When a conductive interconnect includescopper, it is high desirable to not etch a ferroelectric device andexpose the copper conductive interconnect. In such instances, an etchstop layer may be inserted between the conductive interconnect and theferroelectric device. The etch stop layer also acts as a hydrogenbarrier layer to prevent diffusion of hydrogen from a dielectricadjacent to the conductive interconnect to one or more memory devices ina layer above. However, to provide electrical conductivity between theferroelectric device and the conductive interconnect, a transitionelectrode may be inserted between a ferroelectric device and aconductive interconnect. The transition electrode may be embedded withinthe etch stop layer. Because the transition electrode is embedded withinthe etch stop layer, alignment and sizing requirements of the etch stoplayer relative to the conductive interconnect (or the ferroelectricdevice) may be relaxed. Additionally, the shape of the transitionelectrode may be independent of a shape of the conductive interconnect.

The ferroelectric device may be patterned by a plasma etch process.Depending on a shape and size of the ferroelectric device relative tothe transition electrode, the plasma etch process may etch portions ofthe transition electrode and/or the etch stop layer. A resulting shapeof the transition electrode and/or the etch stop layer adjacent to theferroelectric device may partially depend on thicknesses of thetransition electrode and/or the etch stop layer.

The ferroelectric device spans a height that depends on thickness ofindividual layers in the ferroelectric devices. Thus, depending on thethicknesses of the individual layers, the height of the ferroelectricdevice can vary depending on application. In general, the transitionelectrode has a fixed thickness. In order to maintain a height of thememory level, individual thicknesses of the ferroelectric devices andthe via electrodes may be co-dependently tuned. For example, when theferroelectric device has a reduced thickness, the thickness of the viaelectrode may be increased, and vice versa.

To enable high density FeRAM devices the inventors have resorted tonon-lead-based perovskite materials owing its environmental friendlinessfor mass production. A stack for ferroelectric capacitors can includeone or more hardmask materials. The one or more hardmask materials caninclude dielectric materials, metallic materials or a combinationthereof. Implementation of an etch with high selectivity (such as areactive ion etching, or plasma etch process) between the hardmask anddevice layers can advantageously enable patterning.

In some embodiments, the conductive interconnects coupled with arespective ferroelectric device are discrete island structures. In otherembodiments, the conductive interconnect may be a continuous trenchline, where a plurality of ferroelectric devices may be coupled with thetrench line. In some such embodiments, the transition electrode may becontinuous between a respective ferroelectric device and extend along alength of the trench line. In other embodiments, the conductiveinterconnect may be discrete, but the transition electrode (hereinelectrode structure) may be continuous between two or more adjacentcapacitors. In further embodiments, the conductive interconnects arediscrete, but a top electrode of individual ferroelectric capacitors arecoupled together by a single conductive plate.

FIG. 1A is a cross-sectional illustration of a device structure 100A,including a region 101A, adjacent to a region 101B above a substrate150. The region 101A and 101B may be, for example, a memory region and alogic region, respectively or vice versa. In the illustrativeembodiment, region 101A is a memory region 101A and region 101B is alogic region 101B. The memory region 101A includes a plurality ofconductive interconnects within level 104. Each conductive interconnect102 is substantially identical within level 104. The conductiveinterconnect 102 is laterally surrounded by a dielectric 105. Thedielectric 105 includes a material having a low film density, such asfor example density less than 90% of theoretical material density. Insome embodiments, dielectric 105 includes a material having a dielectricconstant that is below 3.5. Dielectric 105 may include SiO₂, SiOC, SiCor SiO₂ doped with F. The device structure 100A further includes a level106 above level 104. Level 106 include a plurality of memory deviceseach including one or more ferroelectric materials or one or moreparaelectric materials. In the illustrative embodiment, each memorydevice 108 within device structure 100A are substantially identical.While two memory device such as memory devices 108 are illustrated, anarray can have more than 1000 substantially identical memory devices108. As shown, each memory device 108 is above and electrically coupledwith a respective conductive interconnect 102.

As shown, an electrode structure 112 is coupled between a respectivememory device 108 and a respective conductive interconnect 102. Theelectrode structure 112 is laterally surrounded by an etch stop layer113. In exemplary embodiments, etch stop layer 113 includes a dielectricmaterial. In exemplary embodiments, the dielectric material of the etchstop layer 113 does not include a metal. The electrode structure 112 maycover an entire top surface or at least a portion of the top surface ofconductive interconnect 102, depending on a lateral thickness (orwidth), W_(ES), of electrode structure 112 compared to a lateralthickness, W_(CI), of conductive interconnect 102. In the illustrativeembodiment, W_(ES), is greater than W_(CI). In embodiments where W_(ES),is greater than W_(CI), electrode structure 112 is also on a portion ofthe dielectric 105. In some such embodiments, hydrogen may diffuse fromthe dielectric 105 to the memory device 108. For example, interface 107Abetween electrode structure 112 and dielectric 105, and interface 107Bbetween electrode structure 112 and etch stop layer 113 may providepathways for hydrogen diffusion. To prevent hydrogen diffusion throughinterfaces 107A and 107B, electrode structure 112 can include a hydrogenbarrier layer along interfaces 107A and 107B.

The hydrogen barrier layer may have various structural embodiments. Inthe illustrative embodiment, electrode structure 112 includes aconductive hydrogen barrier 114 and a conductive fill material 115adjacent to conductive hydrogen barrier 114. As shown, conductivehydrogen barrier 114 extends along interfaces 107A and 107B and is incontact with uppermost surface 102B of conductive interconnect 102. Inthe illustrative embodiment, conductive hydrogen barrier 114 includes aportion 114A which is below conductive fill material 115 and a portion114B that laterally surrounds conductive fill material 115. Portion 114Bis directly between conductive fill material 115 and etch stop layer113. Portion 114A is directly between conductive fill material 115 andconductive interconnect 102. In the illustrative embodiment, whereW_(ES), is greater than W_(CI), portion 114A is also directly in contactwith the dielectric 105. Conductive hydrogen barrier 114 and etch stoplayer 113 form a dual hydrogen barrier from below the memory device 108.

Conductive hydrogen barrier 114 includes a material that is amorphous.Amorphous materials lack defined grain boundaries that can facilitatehydrogen diffusion and are thus desirable. Embodiments of the conductivehydrogen barrier 114 include materials such as, but not limited to,TiAlN, with >30 atomic percent AN, TaN, with >30 atomic percent N₂,TiSiN, with >20 atomic percent SiN, Ta carbide, TaC, Ti carbide, TiC,tungsten carbide, WC, tungsten nitride, WN, carbonitrides of Ta, Ti, W,i.e., TaCN, TiCN, WCN, titanium monoxide, TiO, Ti₂O, Tungsten oxide,WO3, Tin oxide, SnO₂, indium tin oxide, ITO, Iridium Oxide, IndiumGallium Zinc Oxide, IGZO, Zinc Oxide or METGLAS series of alloys, e.g.,Fe₄₀Ni₄₀P₁₄B₆ (METGLAS is a Honeywell™). In some embodiments, theconductive hydrogen barrier 114 has a thickness that is less than 5 nm.

The device structure 100A further includes a second dielectric, such asdielectric 116 spanning the entire memory region 101A. In exemplaryembodiments, the dielectric 116 includes a hydrogen barrier materialwhere the hydrogen barrier material is amorphous, has a high filmdensity (a film density above 90% of theoretical material density) andis electrically insulating. Amorphous materials prevent diffusion alonggrain boundary. High film density prevents diffusion throughinterconnected pores, closing all diffusion pathways. In an embodiment,dielectric 116 includes a transition metal and oxygen, such as forexample Al_(x)O_(y), HfO_(x), ZrO_(x), TaO_(x), TiO_(x), AlSiO_(x),HfSiO_(x) or TaSiO_(x). In other embodiments, dielectric 116 includes anitride of Al, Zr or Hf, for example AN, ZrN, or HfN. The dielectric 116may include a high density SiOx, SiN, SiCN, SiC or SiON. A high densitymaterial has film density greater that 90% of theoretical materialdensity. The dielectric 116 does not include low density SiO_(x), SiN,SiCN, SiC or SiON. A low density material has film density less that 90%of theoretical material density.

As shown dielectric 116 laterally surrounds each memory device and is indirect contact with sidewalls 108A. In the illustrative embodiment,dielectric 116 spans an entire space between any two adjacent memorydevices 108. In some embodiments, the dielectric 116 is also on portionsof an uppermost surface 108B of the memory device 108, such as is shown.

In embodiments, the dielectric 116 includes a material that iscompatible with the selection of ferroelectric oxide within the memorydevice 108. Depending on embodiments, memory device 108 can have threeor more layers. An embodiment of the memory device 108 including threelayers is illustrated in FIG. 1B. As shown, memory device 108 includesat least a bottom electrode 128, a dielectric layer 130 and a topelectrode 132.

In an embodiment, bottom electrode 128 and top electrode 132 include aconductive ferroelectric oxide (when memory device 108 is aferroelectric memory device 108). The conductive ferroelectric oxideincludes one of a non-Pb perovskite metal oxides, such as but notlimited to, La—Sr—CoO₃, SrRuO₃, La—Sr—MnO₃, YBa₂Cu₃O₇, Bi₂Sr₂CaCu₂O₈, orLaNiO₃.

In an embodiment, dielectric layer 130 is a ferroelectric dielectriclayer 130 that includes non-Pb perovskite material in the form ABO₃,where A and B are two cations of different sizes and O is Oxygen. A isgenerally larger than B in size. In some embodiments, non-Pb Perovskitescan also be doped, e.g., by La or Lanthanides. The non-Pb Perovskitematerial can include one or more of La, Sr, Co, Cr, K, Nb, Na, Sr, Ru,Y, Fe, Ba, Hf, Zr, Cu, Ta, Bi, Ca, Ti and Ni.

In other embodiments, ferroelectric dielectric layer 130 includes lowvoltage ferroelectric material sandwiched between top electrode 132 andbottom electrode 128. These low voltage FE materials can be of the formAA′BB′ O₃, where A′ is a dopant for atomic site A and can be an elementfrom the Lanthanides series, where B′ is a dopant for atomic site B andcan be an element from the transition metal elements such as Sc, Ti, V,Cr, Mn, Fe, Co, Ni, Cu, Zn. A′ may have the same valency of site A, witha different ferroelectric polarizability. A voltage below 2-Volts issufficiently low to be characterized as low voltage.

The ferroelectric dielectric layer 130 is chosen to have a similaryoung's modulus as the dielectric 116. Furthermore, dielectric 116 ischosen to have a low probability of presence of defects at the interfacebetween dielectric and the ferroelectric dielectric layer 130.Additionally, dielectric 116 has a lower dielectric constant than thedielectric constant of the ferroelectric dielectric layer 130 to enablefield lines to be concentrated between the top electrode 132 and thebottom electrode 128. In some embodiments, the ferroelectric dielectriclayer 130 can dictate a choice of the dielectric 116.

For example, in some embodiments, where ferroelectric dielectric layer130 include a Pb_(x)Zr_(1-x)Ti_(y)O₃ group of families, dielectric 116can include Al_(x)O_(y), HfO_(x), ZrO_(x), TaO_(x) or TiO_(x). In someembodiments, where ferroelectric dielectric layer 130 include aLa_(x)Bi_(1-x)Fe_(y)O₃ group of families, dielectric 116 can includeAl_(x)O_(y), HfO_(x), ZrO_(x), TaO_(x) or TiO_(x). In some embodiments,where ferroelectric dielectric layer 130 include a BaTiO₃ group offamilies, dielectric 116 can include Al_(x)O_(y), HfO_(x), ZrO_(x),TaO_(x) or TiO_(x). In some embodiments, where ferroelectric dielectriclayer 130 include a BiFeO₃ group of families, dielectric 116 can includeAl_(x)O_(y), HfO_(x), ZrO_(x), TaO_(x) or TiO_(x).

In the illustrative embodiment, level 106 further includes a viaelectrode 118 coupled with each memory device 108. The via electrode 118may include different structures. In each embodiment, the via electrode118 includes at least one conductive hydrogen barrier, such asconductive hydrogen barrier 120 on the memory device 108, a liner layer122 on the conductive hydrogen barrier 120 and a conductive fillmaterial 124 on the liner layer 122. In the illustrative embodiment, theconductive hydrogen barrier 120 laterally surrounds the liner layer 122,and the liner layer 122 laterally surrounds the conductive fill material124. The conductive fill material 124 may include a material such astantalum, titanium, ruthenium, tungsten, molybdenum or copper.

In the illustrative embodiment, the conductive hydrogen barrier 120 ison a portion of the uppermost surface 108B and directly adjacent to thedielectric 116. In one such embodiment, the conductive hydrogen barrier120 and the dielectric 116 combine to provide a seal against hydrogendiffusion to uppermost surface 108B and to sidewalls 108A.

Embodiments of the conductive hydrogen barrier 120 include a materialthat is amorphous. Amorphous materials lack defined grain boundariesthat can facilitate hydrogen diffusion and are thus desirable.Embodiments of the conductive hydrogen barrier 120 include materialssuch as, but not limited to, TiAlN, with >30 atomic percent AN, TaN,with >30 atomic percent N₂, TiSiN, with >20 atomic percent SiN, Tacarbide, TaC, Ti carbide, TiC, tungsten carbide, WC, tungsten nitride,WN, carbonitrides of Ta, Ti, W, i.e., TaCN, TiCN, WCN, titaniummonoxide, TiO, Ti₂O, Tungsten oxide, WO₃, Tin oxide, SnO₂, indium tinoxide, ITO, Iridium Oxide, Indium Gallium Zinc Oxide, IGZO, Zinc Oxideor METGLAS series of alloys, e.g., Fe₄₀Ni₄₀P₁₄B₆ (METGLAS is aHoneywell™). In some embodiments, the conductive hydrogen barrier 120has a thickness that is dependent on W_(VE). In some embodiments,conductive hydrogen barrier 120 has a thickness that is less than 5 nm.It is to be appreciated that conductive hydrogen barrier 120 may includea material that is the same or different from the material of conductivehydrogen barrier 114.

The extent to which the dielectric 116 is on the memory device 108 isdependent on a lateral width, WMA, of the memory device 108 compared toa width, W_(VE), of the via electrode 118. In some embodiments, as isillustrated in FIG. 1C, the memory device 108 has a width, W_(MD), thatis less than the width, W_(VE). In some such embodiments, dielectric 116is directly in contact with sidewalls 108A but not uppermost surface108B. In other embodiments, the via electrode 118 depicted in FIG. 1C,extends below the uppermost surface 108B of the memory device 108, asillustrated in FIG. 1D. In the illustrative embodiment, conductivehydrogen barrier 120 includes a portion 120A that is adjacent tosidewall 108A and below uppermost surface 108B. To prevent shortingand/or cause device degradation, the conductive hydrogen barrier 120does not extend below an interface 123 (indicated by dashed lines)between a ferroelectric oxide layer and one or more top electrodelayers. As further illustrated, depending on a thickness of theconductive hydrogen barrier 120 and relative widths, W_(VE) and W_(MD)liner layer 122 may also have a portion at or below the uppermostsurface 108B. In the illustrative embodiment, liner layer 122 has alower most portion that is substantially at a level of the uppermostsurface 108B. In some embodiments, liner layer 122 has a lower mostportion that is at a level above the uppermost surface 108B. In otherembodiments, liner layer 122 has a lower most portion that is at a levelbelow the uppermost surface 108B.

In some embodiments, the conductive hydrogen barrier 120 matches acontour of the uppermost surface 108B as illustrated in FIG. 1E. In somesuch embodiments, the combination of conductive hydrogen barrier 120 andthe dielectric 116 provide barriers against hydrogen diffusion towardsmemory device 108.

Referring again to FIG. 1A, the conductive interconnect 102, electrodestructure 112 and the memory device 108 can have widths that aresubstantially independent of each other. A spacing, SM, between adjacentmemory devices 108 depends on which of the conductive interconnect 102,electrode structure 112 and the memory device 108 has the largest width.In embodiments, when W_(ES) is greater than W_(MD), and W_(CI), as isshown, SM is determined by a spacing, SES, between the adjacentelectrode structures 112. In some such embodiments, SM is larger thanSES and SM may range between 20 nm and 50 nm.

Reduction in SES, also leads to reduction in SM. However, dielectric 116provides further advantages when SES is reduced. Dielectric 116 permitsadequate insulation and prevents hydrogen from diffusing againstsidewalls 108A such that no spacer is needed between memory device 108and dielectric 116.

Dielectric 116 may provide further advantages when S_(M) is less thanS_(ES) FIG. 1F is a cross-sectional illustration of the device structure100B, in accordance with an embodiment of the present disclosure. Logicregion 101B is not shown for clarity. Device structure 100B is anembodiment of the device structure 100A. In the illustrative embodiment,W_(ES) is less than W_(MD), and W_(CI). When W_(ES) is less than W_(MD),and when W_(MD) is greater than W_(CI), S_(M) can be less than S_(ES),as shown. In some such embodiments, S_(M), can be between 20 nm and 50nm. Reducing S_(M) can advantageously increase the density of memorydevices per unit plan view area of device structure 100B. While twomemory devices 108 are shown, the memory region can include 1000 memorydevices arranged in an array.

In some embodiments, the spacing, S_(M), between adjacent memory devices108 may be comparable to or less than height, T_(MD), of the memorydevice 108. In some such embodiments, a single dielectric 116 includinga material that can act as a barrier against hydrogen diffusion can beimplemented without inclusion of spacers adjacent to memory devices 108.In some embodiments, avoiding implementation of spacer layer adjacent tomemory devices 108 can also help to tune the height, T_(MD), of memorydevice 108.

In some embodiments, S_(M) may depend on a total thickness of layers inthe stack of the memory device 108. In some embodiments, sidewalls 108Aare tapered as indicated by dashed lines 125. The taper in sidewall 108Acan reduce S_(M). Taper in sidewall 108A may increase with a tallerstack (or an increase in T_(MD)) further reducing S_(M). However, memorydevice 108 may need to have a minimum height for device functionality.In some such embodiments, a single dielectric such as dielectric 116provides substantial advantages as density of memory devices 108 isincreased because a single insulator material can be present in thespace between two adjacent memory devices 108. Reduction in S_(M)reduces space to implement a spacer.

In general, the lateral thicknesses W_(CI), and W_(ES) can beindependent of each other. A W_(ES) that is greater than W_(CI) orW_(CI) and W_(MD), may determine choice of material of electrodestructure 112 and conductive fill material 115. The conductive fillmaterial 115 may include a material such as tantalum, titanium,ruthenium, tungsten, molybdenum or copper. For example, when W_(ES) isgreater than W_(MD), electrode structure 112 may not include a materialsuch as copper to prevent sputtering of the electrode structure 112during fabrication of the memory device 108. When W_(ES) is less thanW_(MD) (as illustrated in FIG. 1F) conductive fill material 115 mayinclude copper. In some embodiments, depending on the material, theconductive fill material 115 can further include an adhesion liner 115Aand a fill metal 115B on the adhesion liner 115A as illustrated in FIG.1G.

Referring again to FIG. 1A, in different embodiments, W_(CI) can dependon a plan view shape of the conductive interconnect 102. Conductiveinterconnect 102 and the electrode structure 112 can have a variety ofplan view shapes as will be discussed below. The relative shapes(discussed below) of the electrode structure 112 and conductiveinterconnect 102 can determine relative alignment between sidewalls 112Aand 102A. In some embodiments, the memory device 108 can be directly incontact with the conductive hydrogen barrier 114, if W_(MD) and W_(ES)are substantially similar and if there is positional misalignment.

In some embodiments, etch stop layer 113 includes a material such assilicon, nitrogen and/or carbon. In exemplary embodiments, etch stoplayer 113 includes a material that is different from the material of thedielectric 116. The etch stop layer 113 and the electrode structure 112have a thickness that is determined by a vertical thickness of thememory device 108 and thickness, T₁₀₆, of the level 106. As shown theetch stop layer 113 has a vertical thickness, T_(L), and the electrodestructure 112 has a vertical thickness TES. In the illustrativeembodiment, T_(L), is substantially equal to TES. As such an uppermostsurface 113A is co-planar or substantially co-planar with uppermostsurface 112B. In some embodiments, portions of the uppermost surface112B is concaved due to a processing methodology utilized. Thicknessesof conductive hydrogen barrier 114 and conductive fill material aredetermined by a desired T_(ES). In most embodiments thickness ofconductive fill material 115 is equal to or greater than that thethickness of the conductive hydrogen barrier 114.

Relative size of W_(CI), W_(ES) and W_(MD), can also provide flexibilityin a thickness of the etch stop layer 113 or electrode structure 112. Insome examples when W_(ES) is greater than W_(MD), T_(ES) and T_(EL) canbe relatively thinner compared to when W_(ES) is less than W_(MD)because of process margins to be discussed below.

As shown, and via electrode 118 has a vertical thickness, T_(VE). Level106 has a vertical thickness, T₁₀₆ that is substantially equal to acombined sum of T_(ES), T_(MD), and T_(VE). It is to be appreciated thatindividual thicknesses T_(ES), T_(MD), and T_(VE) may be co-dependentlychosen to optimize performance of memory device 108. For example, T_(MD)may vary between 30 nm and 90 nm and T_(ES) and T_(VE) may be adjustedco-dependently to balance T₁₀₆.

In the illustrative embodiment, logic region 101B includes aninterconnect structure 127 spanning levels 104 and 106. Interconnectstructure 127 includes one or more conductive interconnects in level 104and one or more vias and metal lines coupled with conductiveinterconnect 134 in level 106. In the illustrative embodiment,interconnect structure 127 includes conductive interconnect 134 in level104 and a plurality of metal lines 136 and 138, where metal line 138 iscoupled with conductive interconnect 134 through via structure 140.Metal line 138 may be coupled with a conductive interconnect through avia on a different plane, behind the plane of the illustration.

In the illustrative embodiment, level 106 within the logic regionfurther includes a dielectric 142 on the etch stop layer 113, wheredielectric 142 is directly adjacent to the dielectric 116. Dielectric142 includes a material that is designed to minimize electrical impactto logic circuitry, for example signal delays such as RC delays. Suchelectrical impact can arise due to scaling in feature sizes of metallicinterconnects, such as vias and metal lines, as well as due to reductionin space between them. Increase in capacitive coupling and electricalresistance can increase signal delays. However, reducing a dielectricconstant of the dielectric 116 can ameliorate electrical impact.Lowering the dielectric constant may be generally associated withincreasing porosity in the film. Film porosity may be greater than 90atomic percent by volume in dielectric 116. In some embodimentsdielectric 142 has a dielectric of approximately 3.5 or less. Inembodiments dielectric 142 includes silicon and oxygen (such as low KSiO₂). In the illustrative embodiment, dielectric 142 laterallysurrounds at least a portion of the via structure 140. Depending onT_(L) an T₁₀₆, dielectric 142 includes a material with a low filmdensity (a film density much below 90% of theoretical material density)for example low density SiO₂, carbon doped oxide (CDO), SiOC, SiCN, SiC,SiOxNy, F-doped oxides, or H-doped oxides.

In the illustrative embodiment, etch stop layer 113 extends continuouslyfrom memory region 101A to logic region 101B. At least a portion of thevia structure 140 is adjacent to the etch stop layer 113, as shown. Theetch stop layer 113 may be in contact with the conductive interconnect134 depending on a lateral thickness of the via structure 140. In someembodiments, such as is shown, at least a portion of the etch stop layer113 is on the conductive interconnect 134.

Via structure 140 has a vertical thickness, T_(V), as measured from alower most point of level 104 or from surface 134A of conductiveinterconnect 134, and metal line 138 has a vertical thickness, T_(M). Inexemplary embodiments, a combined sum of T_(M) and T_(V) is equal to acombined sum of individual thicknesses T_(ES), T_(MD), and T_(VE). Ingeneral, T_(M) and T_(VE) need not be equal. In some embodiments, T_(VE)is between 80%-100% of T_(M). In some embodiments, T_(M) is between 20nm and 50 nm. In other embodiments, T_(M) is between 50 nm and 200 nm.

In an embodiment, T_(MD) has a thickness between 10 nm and 100 nm andT_(ES) has a thickness between 2 nm and 20 nm. In an embodiment, sum ofT_(MD) and T_(ES) is approximately between 85%-100% of T_(V). In someembodiments, T_(V) is between 20 nm and 50 nm. In other embodiments,T_(V) is between 20 nm and 150 nm.

Conductive interconnect 134 has one or more properties of conductiveinterconnect 102. Conductive interconnects 102 and 134 include a metalsuch as copper, cobalt, molybdenum, tungsten or ruthenium. In someembodiments, conductive interconnects 102 and 134 include a liner layerand a fill metal on the liner layer. For example, the liner layer mayinclude a material, such as but not limited to, ruthenium, cobalt ortantalum and the fill metal may include copper, molybdenum or tungsten.Conductive interconnects 102 and 134 have a thickness that spans aportion of dielectric 105 within level 104. There may be other vias andinterconnect routing connections within level 104 that are not shown inthe Figure. The conductive interconnects 102 and 134 may be discretevias or continuous trenches, as will be discussed further below.

In an embodiment, via structure 140, metal lines 136 and 138, include asame or substantially the same material. In the illustrative embodiment,via structure 140, metal lines 136 each include a liner layer 144 and afill material 146 on the liner layer 144. For example, the liner layer144 may include a material, such as but not limited to, ruthenium,cobalt, tantalum, or nitrides of tantalum and titanium, and the fillmaterial 146 may include copper, molybdenum or tungsten. In someembodiments, via structure 140 and metal lines 136 and 138, include asame or substantially the same material as the material of theconductive interconnect 102.

The substrate 150 may include a suitable substrate such as is utilizedin semiconductor device fabrication and may comprise a material such assilicon, germanium, silicon germanium, group III-V materials, groupIII-N materials or quartz.

FIG. 1H is an example of a device structure 100C, that includes anelectrode structure 148 that has a structure that is different from theelectrode structure 112 depicted in the device structure 100A of FIG.1A. The electrode structure 148 includes conductive fill material 115and conductive hydrogen barrier 114, where the conductive hydrogenbarrier 114 extends laterally above and in direct contact withconductive fill material 115. In the illustrative embodiment, thoughconductive hydrogen barrier 114 does not laterally surround conductivefill material 115, it forms a barrier between memory device 108 and thedielectric 105. In the illustrative embodiment, conductive hydrogenbarrier 114 has an uppermost surface that is co-planar or substantiallyco-planar with the uppermost surface of the etch stop layer 113.Electrode structure 148 has a vertical thickness T_(ES). In exemplaryembodiments, T_(ES) is equal to or substantially equal to T_(L), asshown. In the illustrative embodiment, the electrode structure 148 has alateral thickness W_(ES) that is greater than W_(MD). In some suchembodiments, memory device 108 is on a portion of the electrodestructure 148. Device structure 100C is the same or substantially thesame as device structure 100A in all other regards.

In other embodiments, W_(ES) of electrode structure 148 that is lessthan W_(MD) as illustrated in device structure 100D in FIG. 1I. In theillustrative embodiment, memory device 108 is also on a portion of theetch stop layer 113. While W_(ES) is less than W_(MD), the combinationof etch stop layer 113 and conductive hydrogen barrier 114 provideadequate protection as a hydrogen barrier to memory device 108. Devicestructure 100D is substantially the same or substantially the same asdevice structure 100C in all other regards.

In some embodiments, the dielectric 116 may be separated from the memorydevice 108 by a layer of material that may be similar or different thanthe material of dielectric 116. FIG. 1J is an illustrative embodiment ofthe device structure 100A in FIG. 1A, where an encapsulation layer 152is inserted between the dielectric 116 and memory device 108. Theencapsulation layer 152 in device structure 100E may include a materialthat is substantially similar to a material of the dielectric 116 or bedifferent. In the illustrative embodiment, encapsulation layer 152 isdirectly adjacent to sidewalls 108A, on a portion of electrode structure112 and on the etch stop layer 113. As shown, encapsulation layer 152 ison an uppermost surface 108B and adjacent to conductive hydrogen barrier120, where W_(VE) is less than W_(MD).

In one or more embodiments, the encapsulation layer 152 can have athickness, TEC, that varies between 1 nm and 5 nm. The encapsulationlayer 152 may be substantially conformal with sidewalls 108A anduppermost surface 108B, as illustrated. But in other embodiments, anupper portion 152A of the encapsulation layer 152 may be wider than TEC.

The encapsulation layer 152 may extend over to a boundary between thememory region 101A and logic region 101B, as shown. As shown,encapsulation layer 152 is adjacent to dielectric 142. The encapsulationlayer 152 does not extend over the logic region 101B to exclude materialthat is capable of possessing a high dielectric constant in a regionfilled with logic interconnect circuitry.

In the illustrative embodiment, where W_(ES) is greater than W_(MD), theencapsulation layer 152 is in contact with both the conductive hydrogenbarrier 114 and the conductive fill material 115. In other embodiments,where W_(ES) is less than W_(MD), encapsulation layer 152 is not incontact with electrode structure 112.

In some embodiments, it is advantageous for T_(MD) to be comparable toT_(ES). For example, T_(MD) may be at most 2 times T_(ES). In some suchembodiments, T_(MD) and T_(ES) combined may not be equivalent to T_(V)such as is illustrated in FIG. 2A. FIG. 2A is a cross-sectionalillustration of a device structure 200A, in accordance with anembodiment of the present disclosure. Device structure 200A includesmany of the features of the device structure 100A such as conductiveinterconnect 102, electrode structure 112, memory device 108, viaelectrode 118, conductive interconnect 134, dielectric 116, anddielectric 142.

In the illustrative embodiment, the device structure 200A furtherincludes a level 202 above level 106. Level 202 includes a dielectric204 on the dielectric 116. For integration flexibility dielectric 204may include a material having a lower film density than dielectric 116.In some embodiments, dielectric 204 includes a material that is the sameor substantially the same as the material of the dielectric 142.

In the illustrative embodiment, device structure 200A includes anelectrode structure 205 that is coupled with the memory device 108. Asshown, electrode structure 205 includes via electrode 118 and a contactelectrode 206 on the via electrode 118. Via electrode is adjacent todielectric 116 and contact electrode 206 is adjacent to dielectric 204.Electrode structure 205 includes layers that are contiguous with layerswithin via electrode 118 and contact electrode 206.

In the illustrative embodiment, via electrode 118 has one or morefeatures of the via electrode 118 described in association with FIG. 1A.Referring again to FIG. 2A, conductive hydrogen barrier 120 within viaelectrode 118 includes a lateral portion 120B that is on memory device108 and a plurality of vertical portions 120C. Vertical portions 120Care directly adjacent to dielectric 116. The via electrode also includesliner layer 122 and conductive fill material 124.

As shown, conductive hydrogen barrier 120, liner layer 122, andconductive fill material 124 are contagious within electrode structure205. The contact electrode 206 (within electrode structure 205) includesvertical portions 120C of conductive hydrogen barrier 120, wherevertical portions 120C are adjacent to dielectric 204. In theillustrative embodiment, contact electrode 206 has a width, W_(C) thatis greater than a width W_(VE). In some such embodiments, the conductivehydrogen barrier 120 includes a portion that is on uppermost surface116A of dielectric 116, as shown. As such, conductive hydrogen barrier120 extends from the uppermost surface 108B adjacent to dielectric 116and dielectric 204, to an uppermost surface 204A.

The conductive hydrogen barrier 120, liner layer 122 within contactelectrode 206 do not include lateral portions. The absence of lateralportions is an artifact of a co-fabrication process that is utilized toform electrode structure 205, as will be discussed below. The linerlayer 122 follows a contour of and is directly adjacent to theconductive hydrogen barrier 120. Conductive fill material 124 includes aportion within the contact electrode 118 and a portion within contactelectrode 206.

Dielectric 116 and conductive hydrogen barrier 120 combine to facilitateblocking of hydrogen such that dielectric 204 may include a porous, lowdensity ILD material without impact to memory device 108. A dielectricsuch as dielectric 204 that includes an ILD material facilitatesfabrication of electrodes and lines within both the memory region 101Aand logic region 101B in level 202.

Contact electrode 206 may be a via or a trench. Depending onembodiments, contact electrode 206 can have a width that is the same asthe width of via electrode 118 or be different. In embodiments, wherecontact electrode 206 is a trench electrode 206, contact electrode 206may couple a plurality of via electrodes 118 above a respective memorydevice 108, as will be discussed below.

In other embodiments, as will be discussed below, contact electrode 206may not include conductive hydrogen barrier 120.

In the illustrative embodiment, via electrode 118 and metal lines 136and 138 are on two different levels. In the illustrative embodiment,metal lines 136 and 138 are within level 202 above via structure 208.Via structure 208 includes one or more properties of via structure 140such as material composition and lateral thickness. In some suchembodiments, via structure 208 has a vertical thickness, T_(V) that isequal to a vertical thickness, T₁₀₆, of level 106. In the illustrativeembodiment, T_(V) is equivalent or substantially equivalent to sum ofT_(ES), T_(MD) and T_(VE). It is to be appreciated that T_(VE) can bereduced to accommodate a taller stack (increase in T_(MD)) for memorydevice 108.

As discussed earlier metal lines 136 and 138 have a vertical thicknessT_(M). In the illustrative embodiment, T_(M) is a thickness of level202. As shown, T_(M) is also substantially equal to a vertical thicknessTTE of contact electrode 206.

The electrode structure 112 in FIG. 2A may be replaced by an electrodestructure 148, as illustrated in FIG. 2B, in accordance with anembodiment of the present disclosure. Device structure 200B includes oneor more features of the device structure 200A other than the electrodestructure 148. It is to be appreciated that electrode structure 148 indevice structure 200B, may be wider than or narrower than the memorydevice 108 and conductive interconnect 102.

FIG. 3A is an isometric illustration of the device structure 300A, inaccordance with an embodiment of the present disclosure. Devicestructure 300A includes many of the features of device structure 100Adescribed in association with FIG. 1A. As shown, conductiveinterconnects 102 are discrete islands. Device structure 300A furtherincludes further features not illustrated in FIG. 1A as well as somevariations in features of certain structures.

Device structure 300A includes a plurality of memory devices such asmemory device 302 on plane 304, behind a plane 306 of memory device 108.Memory device 302 is substantially identical to and has all theproperties of memory device 108. In the illustrative embodiment, each ofthe memory devices 108 and 302 are coupled with a respective conductiveinterconnect 102.

As shown each conductive interconnect 102 has a discrete islandstructure (i.e., a conductive interconnect surrounded by dielectric105). The conductive interconnect 102 may include a variety of shapes.As illustrated conductive interconnect 102 is discrete, cylindrical, andspaced apart from an adjacent conductive interconnect 102. In some suchembodiments, lateral thickness or width, W_(CI) is also a diameter.

In the illustrative embodiment, the respective memory device 108 andmemory device 302 have a cylindrical shape. In some such embodimentslateral thickness or width, W_(MD), is a diameter of the respectivememory device 108 or memory device 302.

In the illustrative embodiment, electrode structure 112 also has acylindrical shape. In some such embodiments W_(ES), is a diameter of theelectrode structure 112. However, it is to be appreciated that the shapeof the electrode structure 112 can be independent of the shape of thememory device 108 or 302, or a shape of conductive interconnect 102. Asshown a portion of the conductive hydrogen barrier 114 is an annularshaped ring around the conductive fill material 115.

In the illustrative embodiment, each electrode structures 112 is spacedapart from an adjacent electrode structures 112 by a distance, S_(M)along the x-direction and along the y-direction. In embodiments, S_(M)along the x-direction and along the y-direction may be the same ordifferent.

In the illustrative embodiment, conductive interconnect 134 is aconductive trench interconnect 134 that extends along the y-direction.As shown, metal lines 136 and 138 also extend along the y-direction. Insome embodiments, via structure 140 is conductive via between metal line138 and conductive trench interconnect 134. In other embodiments,interconnect structure 127 can include a plurality of vias such as viastructure 140 between metal line 138 and conductive interconnect 134 toprevent an increase in electrical line resistance. In other embodiments,via structure 140 may be replaced by a metal line (not illustrated).

In some embodiments, conductive interconnect 102 is a trenchinterconnect 308, as illustrated in device structure 300B of FIG. 3B.Only the memory region 101A is illustrated for clarity. The trenchinterconnect 308 may continuously extend continuously from under memorydevice 108 on plane 306 to under memory device 302 on plane 304, asshown in the cross-sectional illustration of FIG. 3C. In theillustrative embodiment, the trench interconnect 308 couples a lowermost electrode of memory device 108 and 302 along a length of the trench(along the y-direction). In embodiments, trench interconnect 308includes a material that is the same or substantially the same as thematerial of the conductive interconnect 102. Trench interconnect 308 isnot exposed to memory device 108 or 302 during memory devicefabrication. As shown, the conductive hydrogen barrier 114 and the etchstop layer 113 act as a collective hydrogen barrier.

Referring again to FIG. 3B, because the etch stop layer 113 extends overthe trench interconnect 308, the electrode structure 112 can have ashape and/size that is independent of the shape of trench interconnect308. It is also to be appreciated that electrode structure 112 can beoffset along the x or the y direction relative to the trenchinterconnect 308, without loss of device functionality, as long as thereis at least 50% overlap. As shown, trench interconnect 308 has a lateralthickness, W_(TI). In general, W_(TI) may be equal to, less than orgreater than W_(ES). In the presence of a trench interconnect 308, etchstop layer 113 may be thicker than in the presence of conductiveinterconnect 102 (illustrated in FIG. 3A). In the presence of a trenchinterconnect 308, while the trench interconnect 308 can be narrower thanelectrode structure 112, e.g., along x-direction, trench interconnect308 is wider than that electrode structure 112 along the y-direction. Athicker etch stop layer 113 may advantageously provide sufficientmaterial while patterning to form memory devices 108 and 302 (along they-direction) as will be discussed below.

As discussed above, the shape of the electrode structure 112 may beindependent of the trench interconnect 308 or the memory device 108. Theelectrode structure 112 (depicted in FIG. 3B) has a cylindrical shape.However, the electrode structure 112 can be rectangular in otherembodiments, such as is illustrated in FIG. 3D (the etch stop layer 113or dielectric 116 is not shown for clarity). As shown, the conductiveinterconnect 102, in the memory region 101A are discrete islands,however, electrode structure 112 is a trench electrode structure 310that couples two or more memory devices 108. Trench electrode structure310 may extend laterally from above a conductive interconnect 102 onplane 306 to above conductive interconnect 102 on plane 304, behindplane 306. As such, trench electrode structure 310 couples a lower mostelectrode of the respective memory devices 108 and 302. Trench electrodestructure 310 provides enhanced flexibility to couple a selected numberof memory devices along a row without having to provide a continuoustrench. The flexibility to choose the number of devices and groups ofdevices can provide additional electrical advantages such as forprogramming.

Trench electrode structure 310 has one or more properties of electrodestructure 112, such as conductive hydrogen barrier 114 and conductivefill material 115. As shown, conductive hydrogen barrier 114 extendsalong the length and width L_(TE) and a width W_(TE). In someembodiments, W_(TE) is smaller or greater than W_(MD), or W_(CI). Asshown, W_(TE) is greater than W_(MD), and W_(CI). L_(TE) issubstantially greater than W_(CI). Although as illustrated, W_(TE) isgreater than W_(CI), in other embodiments, W_(TE) can be less thanW_(CI) without loss of functionality. Furthermore, as explained above,W_(MD) can be independent of W_(TE).

FIG. 4A is an isometric illustration of device structure 400, inaccordance with an embodiment of the present disclosure. Devicestructure includes one or more features of the device structure 200Aillustrated in FIG. 2 . In the illustrative embodiment, contactelectrode 206 extends from memory device 108 to memory device 302 (alongy-direction). In other embodiments, contact electrode 206 connects twoor more adjacent memory devices 108 (along x-direction).

FIG. 4B is a cross-sectional illustration through a line A-A′ of thestructure in FIG. 4A. As shown, conductive hydrogen barrier 120 extendscontinuously from a first sidewall 206A of contact electrode 206 abovememory device 108 to a second sidewall 206B. In the illustrativeembodiment, liner layer 122 is adjacent to conductive hydrogen barrier120 and conductive fill material 124 fills extends continuously fromabove memory device 108 to memory device 302.

FIG. 5 is a flow diagram to form memory devices in a memory region andconductive interconnects in a logic region, in accordance with someembodiments of the present disclosure. Some operations can be performedsimultaneously or out of order. The method begins at operation 510, withthe formation conductive interconnects in a dielectric in a memoryregion and in an adjacent logic region. The method 500 continues atoperation 520 with the deposition of an etch stop layer on thedielectric and on the conductive interconnects. The method continues atoperation 530 with the formation of electrode structures including aconductive hydrogen barrier material on each of the conductiveinterconnects, in the memory region. The method continues at operation540 with the process to etch a material layer stack deposited on theelectrode material to form a memory device above a respective conductiveinterconnect in the memory region. The method continues at operation 550with the deposition of a first dielectric including a high density filmand forming a via electrode including a conductive hydrogen barriermaterial on a respective memory device. The method continues atoperation 560 with a process to etch and remove the first dielectricfrom the logic region and replacing with a second dielectric including aporous material. The method continues at operation 570 with a formationof a hanging trench in the second dielectric in the logic region. Themethod continues at operation 580 with the formation of via openingbelow the hanging trench and exposing a conductive interconnect. Themethod concludes at operation 590 with the formation of a via structurein the via opening and a metal line in the hanging trench.

FIG. 6A is a cross-sectional illustration of a plurality of conductiveinterconnects 102 and 134 formed within dielectric 105 above a substrate600. In the illustrative embodiment, conductive interconnects 102, areformed in a memory region and conductive interconnect 134 is formed in alogic region. In exemplary embodiments, there may be one or more levelsof transistors and interconnects between conductive interconnects 102and 134 and substrate 600. In high density memory applications, thenumber of conductive interconnects 102 and 134 can range between 1K and5K within a given array in memory region 101A. Conductive interconnects102 and 134 have a lateral thickness, W_(CI), that may be determined bya minimum acceptable electrical resistance. In some embodiments,conductive interconnects 102 are discrete structures that aresubstantially, rectangular, circular or elliptical in plan-view shapeand conductive interconnect 134 is a trench line (extending into theplane of the Figure). In some embodiments, conductive interconnects 102have a lateral thickness between 20 nm and 40 nm. For example,conductive interconnects 102 may have a lateral thickness between 20 nmand 40 nm, along the x-direction, as shown. In other embodiments,conductive interconnects 102 and 134 are trenches that extend into theplane of the Figure. The conductive interconnects 102 and 134 may haveshapes that are independent of each other. As shown, conductiveinterconnects 102 have substantially the same lateral thickness tominimize variability in device performance.

In some embodiments, the conductive interconnects 102 and 134 areelectrically and mechanically coupled with vias and/or lines such as via601 and/or line 601 indicated in dashed boxes in the Figure. The via 601and/or line 601 may include a same or substantially the same material asa material of the conductive interconnect 102.

In some embodiments, conductive interconnects 102 and 134 include aliner layer and a fill metal on the liner layer. For example, the linerlayer may include a material, such as but not limited to, ruthenium,cobalt or tantalum and the fill metal may include copper or tungsten. Inone or more embodiments, conductive interconnects 102 and 134 includecopper fill metal on a ruthenium or a tantalum liner. In an embodiment,each of the conductive interconnects 102 are separated by spacingS_(IC). S_(IC) is substantially determined by a designed density ofmemory devices to be fabricated within a given area, as well as byunderlying structures embedded within layers below conductiveinterconnects 102.

In various embodiments, substrate 600 includes a material that is thesame or substantially the same as the material of the substrate 150described in association with FIG. 1A.

FIG. 6B is a cross-sectional illustration of the structure in FIG. 6Afollowing the process to deposit an etch stop layer 113 on conductiveinterconnects 102 and 134 as well as on the dielectric 105. Etch stoplayer 113 is deposited to a thickness, TED that is chosen to accommodatea height of an electrode structure to be formed. For example, the asdeposited thickness, TED, may include process margins for multipleplanarization processes to be utilized. TED is also chosen to providesufficient material against etch erosion during process to form memorydevices in the memory region 101A.

The etch stop layer 113 also functions as a diffusion barrier layer. Adiffusion barrier is essential for preventing diffusion of copper fromconductive interconnect 134, and hydrogen during downstream process tothe memory devices to be formed or other devices within the logicregion. As such, etch stop layer 113 includes a material such as, butnot limited to, silicon nitrogen and one or more of, oxygen or carbon.

FIG. 7A is a cross-sectional illustration of the structure in FIG. 7Afollowing the process to etch openings 701 in etch stop layer 113 toform electrode structures. In an embodiment, photoresist mask 702 isformed by a lithographic process on etch stop layer 113. Exposedportions of etch stop layer 113 may be etched by a plasma etch processthrough opening in the photoresist mask 702. In the illustrativeembodiment, the openings 701 have a lateral thickness, W_(O). W_(O) maybe substantially the same across various openings 701 that are designedto form electrode structures. W_(O) may be narrower, equal to or widerthan W_(CI) of conductive interconnects 102. In the illustrativeembodiment, W_(O) is less than W_(CI). The substrate 600 is notillustrated in FIGS. 6B-14C, for clarity.

Shape of openings 701 may be circular or rectangular and the conductiveinterconnects may be discrete islands or trenches depending onembodiments. FIGS. 7A-7C illustrate different embodiments (for exampleportions 704A, 704B and 704C) of a portion 704 of the conductiveinterconnect and opening in FIG. 7A. The photoresist mask 702 is removedfor clarity.

FIG. 7B is an isometric illustration of a portion 704A of the structurein FIG. 7A, in accordance with an embodiment of the present disclosure.A cross section through opening 701 is illustrated. In the illustrativeembodiment, the conductive interconnect 102 is cylindrical, where W_(CI)is less than W_(CI), (for example diameter) of opening 701. As shownopening 701 is circular and W_(O) may be, for example, a diameter of theopening 701. In other embodiments, opening 701 can be rectangular and/orextend over two or more conductive interconnects, such as for example,conductive interconnects 102. The dielectric 105 is exposed duringformation of the openings 701 when W_(CI) is less than W_(CI), as shown.In the illustrative embodiment, uppermost surface 102B of conductiveinterconnect 102 is co-planar or substantially co-planar with uppermostsurface 105A of dielectric 105.

In some embodiments, the conductive interconnect within portion 704C isa trench interconnect 308 as illustrated in FIG. 7C. In some suchembodiments, the openings 701 expose different portions of uppermostsurface 308A of trench interconnect 308. In the illustrative embodiment,W_(TI) is less than W_(O) and openings 701 expose uppermost surface 105Aof the dielectric 105. In the illustrative embodiment, uppermost surface308A of trench interconnect 308 is co-planar or substantially co-planarwith uppermost surface 105A. In the illustrative embodiment, opening 701is circular. However, in other embodiments, the opening 701 can berectangular as indicated by dashed lines 705.

While it is desirable for the opening 701 to be substantially alignedwith sidewalls of trench interconnect 308, in some embodiments, theopening 701 may be offset relative to trench interconnect 308, as isillustrated in portion 704C in FIG. 7D. Such an offset may be a resultof misalignment between photoresist mask 702 and the trench interconnect308 (or a conductive interconnect in other embodiments). The methodadopted to fabricate an electrode structure within opening 701 is notimpacted by misalignment as long as at least 50% of the opening 701exposes the uppermost surface 308A of trench interconnect 308.Misalignment does not enable hydrogen to diffuse through to the memorydevice 108 (not shown).

FIG. 8A is a cross-sectional illustration of the structure in FIG. 7Afollowing the process to deposit one or more electrode materials on theconductive interconnects 102 and on etch stop layer 113. In anembodiment, a conductive hydrogen barrier material 800 is deposited inthe opening 701, on sidewalls of etch stop layer 113 and on theconductive interconnect 102. In the illustrative embodiment, conductivehydrogen barrier material 800 is also deposited on exposed portions ofthe dielectric 105. A fill material 802 is filled in remaining portionsof opening 701 on the conductive hydrogen barrier material 800.Depending on the type of material chosen for fill material 802, a linerlayer (indicated by dashed lines 803) may be first deposited on theconductive hydrogen barrier material 800 and then the fill material 802is deposited on the liner layer. In embodiments the conductive fillmaterial 115 includes tantalum, titanium, ruthenium, tungsten or copper.

FIG. 8B is a cross-sectional illustration of the structure in FIG. 8Afollowing the process to planarize the fill material 802 and theconductive hydrogen barrier material 800. In an embodiment, theplanarization process includes a chemical mechanical planarization (CMP)process. The CMP process removes the fill material 802 and theconductive hydrogen barrier material 800 from an uppermost surface 113Aof the etch stop layer 113. The planarization process isolates theconductive hydrogen barrier material 800 to form a conductive hydrogenbarrier 114 and the fill material 802 to form a conductive fill material115

The CMP process may also reduce the as deposited thickness of the etchstop layer 113 to a thickness TEC. TEC may be substantially uniformacross the memory and logic regions 101A and 101B, respectively. Theremay be variations in thicknesses of up 5% from the CMP processing due tothe presence of the electrode structures. Additionally, in someembodiments, the conductive fill material 115 may be dished (or recessedin a concave manner) as indicated by dashed lines 805. A concavedprofile may change a surface profile of each layer within a memorydevice to be formed. The extent of dishing may be dependent on W_(CI)and on a pattern density of and spacing between the electrode structures112.

FIG. 8C is a cross-sectional illustration of the structure in FIG. 8Bfollowing the process to form material layer stack 806 on the electrodestructure 112 and on the etch stop layer 113.

The process to form material layer stack 806 includes blanket depositionof at least three material layers, where the number further depends on atype of memory device to be fabricated. In some embodiments, thematerial layer stack 806 includes deposition of layers for aferroelectric memory device. In other embodiments, the material layerstack 806 includes deposition of layers for a paraelectric memorydevice.

In an embodiment, individual layers of material layer stack 806 (for aferroelectric memory device) are deposited in situ, i.e., withoutbreaking vacuum. Material layer stack 806 may be deposited by an atomiclayer deposition (ALD) process, a plasma enhanced chemical vapordeposition (PECVD), chemical vapor deposition (CVD), a physical vapordeposition (PVD) process or a combination thereof. In some embodiments,conductive layer 806A is blanket deposited on electrode structure 112and on etch stop layer 113. In an embodiment, conductive layer 806Aincludes a conductive ferroelectric oxide. The conductive ferroelectricoxide includes one of a non-Pb perovskite metal oxides, such as but notlimited to, La—Sr—CoO₃, SrRuO₃, La—Sr—MnO₃, YBa₂Cu₃O₇, Bi₂Sr₂CaCu₂O₈, orLaNiO₃.

Conductive layer 806A is deposited to a thickness, Ti, that is suitablefor minimizing electrical resistance and to minimize tapering ofsidewalls during a patterning process that will be utilized to fabricatememory devices. In some embodiments, conductive layer 806A has athickness that is between 3 nm and 30 nm. A thickness of less than 30 nmis highly desirable to prevent significant tapering in sidewalls duringthe patterning process.

In an embodiment, the deposition process is continued by deposition of adielectric layer 806B (for example, a ferroelectric dielectric layer806B for a ferroelectric memory device). The dielectric layer 806B maybe blanket deposited on the conductive layer 806A. Dielectric layer 806Bhas a thickness, T₂, that is between 1 nm and 30 nm. In someembodiments, dielectric layer 806B includes non-Pb Perovskite materialin the form ABO₃, where A and B are two cations of different sizes and Ois oxygen. A is generally larger than B in size. In some embodiments,non-Pb Perovskites can also be doped, e.g., by La or Lanthanides. Thenon-Pb Perovskite material can include one or more of La, Sr, Co, Cr, K,Nb, Na, Sr, Ru, Y, Fe, Ba, Hf, Zr, Cu, Ta, Bi, Ca, Ti and Ni.

In other embodiments, dielectric layer 806B includes a low voltageferroelectric material sandwiched between the conductive oxide layers(806A and 806C). Low voltage materials can be of the form AA′BB′ O₃,where A′ is a dopant for atomic site A and can be an element from theLanthanides series and B′ is a dopant for atomic site B and can be anelement from the transition metal elements such as Sc, Ti, V, Cr, Mn,Fe, Co, Ni, Cu, Zn. A′ may have the same valency of site A, with adifferent ferroelectric polarizability. A voltage below 3 Volts issufficiently low to be characterized as low voltage.

The deposition process is continued with a deposition of conductivelayer 806C on dielectric layer 806B. In an exemplary embodiment, theconductive layer 806C includes a material that is the same orsubstantially the same as the material of conductive layer 806A. Whenconductive layers 806A and 806C include the same material, the materiallayer stack is symmetric. In different embodiments, conductive layer806C can have a different thickness than conductive layer 806A. Inembodiments, conductive layer 806C is deposited to a thickness, T₃,between 3 nm and 30 nm. Conductive layer 806C between 3 nm and 30 nm canfacilitate the patterning process.

In some embodiments, such as is shown, the deposition process concludeswith the formation of hardmask layer 808 on conductive layer 806C. Insome embodiments, hardmask layer 808 is blanket deposited by a PECVD,CVD or PVD process. In an embodiment, hardmask layer 808 includes amaterial that has a favorable etch selectivity compared to theferroelectric materials in material layer stack 806. In someembodiments, hardmask layer 808 includes materials that can be patternedwith high fidelity with respect to a masking layer formed on hardmasklayer 808, for example SiO₂, Si₃N₄, DLC (Diamond Like Carbon) or Al₂O₃.In other embodiments, hardmask layer 808 includes a conductive materialthat is different from the conductive material of the ferroelectricmaterial. In some embodiments it is desirable to deposit hardmask layer808 to a thickness, T₄, that enables patterning of at least theconductive layer 806C. In other embodiments, hardmask layer 808 maydeposited to a thickness, T₄, that depends on a total thickness ofmaterial layer stack 806. T₄ may be at least 20 nm. In a differentembodiment, hardmask layer 808 includes a bilayer where the bilayerincludes a metallic layer and a dielectric on the metallic layer.

In an embodiment, photoresist mask 810 is formed on hardmask layer 808and is formed by a lithographic process. The photoresist mask 810includes blocks 810A and 810B. Each block 810A-810B is a mask forpatterning a discrete memory device, such as for example a ferroelectricmemory device.

In an embodiment, the dielectric layer 806B includes paraelectricmaterials. Paraelectric materials may include: SrTiO3, Ba(x)Sr(y)TiO3(where x is −0.05, and y is 0.95), HfZrO2, Hf—Si—O, La-substitutedPbTiO3, or a PMN-PT based relaxor ferroelectrics. In some embodiments,material layer stack including paraelectric materials can range from 5nm to 100 nm in total thickness.

FIG. 8D is a cross-sectional illustration of the structure in FIG. 8Cfollowing the process to pattern hardmask layer 808 and the materiallayer stack 806. In an embodiment, hardmask layer 808 is etched by aplasma etch process. The plasma etch process may include a dischargeproduced by a magnetic enhanced reactive ion etching mechanism, anelectron cyclotron resonance discharge or an inductively coupled plasmadischarge. The plasma parameters may be characterized by a range ofplasma densities such as between 1e9-1e12 ions/cm³, pressures in therange of 0.001-10 Torr, and electron temperatures in the range of 1-8eV. Ions may be accelerated to the surface from a plasma sheath by meansof electrostatic chuck with biasing capabilities that are independent ofthe power delivered to sustain various plasma configurations. It ishighly desirable to pattern hardmask layer 808 to have substantiallyvertical side walls to prevent increase in a width when patterning theremaining layers in material layer stack 806.

A CH_(x)Fy (fluorocarbon) O₂ and Ar based gas combination may beutilized to etch hardmask layer 808 to form hardmask 133 in one of thethree different plasma discharges described above. In an exemplaryembodiment, hardmask 133 has a substantially vertical profile relativeto a lowermost surface 128A. In some embodiments, photoresist mask 810is removed after forming hardmask 133. The plasma etch process iscontinued to pattern conductive layer 806C. Hardmask 133 is utilized toetch conductive layer 806C. In an embodiment, a plasma etch process isutilized to etch the conductive layer 806C to form a top electrode 132.In the illustrative embodiment, top electrode 132 has substantiallyvertical sidewalls 132A. In some embodiments, hardmask 133 is removedduring the plasma etch process as indicated by dashed lines, when thehardmask 133 includes a dielectric material. The etch process iscontinued to etch dielectric layer 806B to form etched dielectric layer130 (herein dielectric layer 130).

The plasma etch process is continued to etch and form a bottom electrode128. In an embodiment, the process utilized to etch conductive layer806A (FIG. 8C) to form bottom electrode 128 may be substantially thesame as the etch process utilized to form top electrode 132. In theillustrative embodiment, sidewalls of the memory device 108 aresubstantially vertical respect to a normal to lowermost surface 128A.The process of forming the top electrode 132, dielectric layer 130,bottom electrode 128 also completes formation of memory device 108.

FIG. 9A is a cross-sectional illustration of the structure in FIG. 8Dfollowing the process to deposit a dielectric 116 and following aprocess to planarize the dielectric 116. In an embodiment, dielectric116 can be deposited by an atomic layer deposition (ALD) process, aplasma enhanced chemical vapor deposition (PECVD), chemical vapordeposition (CVD), a physical vapor deposition (PVD) process or acombination thereof.

In an embodiment, the dielectric includes a transition metal and oxygen,such as for example Al_(x)O_(y), HfO_(x), ZrO_(x), TaO_(x), TiO_(x),AlSiO_(x), HfSiO_(x) or TaSiO_(x). In other embodiments, dielectric 116includes a nitride of Al, Zr or Hf, for example AN, ZrN, or HfN. Some ofthe dielectric materials may be deposited by a process that utilizeshydrogen or ammonia containing precursor chemicals, while othermaterials may be deposited by a process that does not utilize hydrogenor be performed in an environment where hydrogen may be present. In someembodiments, deposition of dielectric 116 is performed by a combinationof processing operations. A first operation may utilize a physical vapordeposition process to deposit a material including a transition metaland oxygen, such as but not limited to Al_(x)O_(y), HfO_(x), ZrO_(x),TaO_(x), TiO_(x), AlSiO_(x), HfSiO_(x), TaSiO_(x), or a transition metaland nitrogen such as but not limited to AN, ZrN, or HfN. A secondoperation may be subsequently performed where one or more ofAl_(x)O_(y), HfO_(x), ZrO_(x), TaO_(x), TiO_(x), AlSiO_(x), HfSiO_(x),TaSiO_(x), AN, ZrN, or HfN may be deposited by a process that may or maynot utilize a hydrogen precursor.

In other embodiments, dielectric 116 may include a same materialsequentially deposited by two different deposition methods. For example,a first deposition process may be utilized to deposit a material in ahydrogen free environment, and a second deposition process may beutilized to deposit the same material that utilizes hydrogen. Theadvantage of this dual deposition operation is important when spacing,S_(M), between adjacent memory devices 108 approaches 2-3 times athickness of the material deposited by the first deposition process. Insome such embodiments, a thin layer of dielectric 116B (within dashedlines 902) is deposited on the memory device 108 and on etch stop layer113. A physical vapor deposition (PVD) process can be utilized todeposit thin layer of dielectric 116B to a thickness of less than 5 nm,where the deposition process does not expose the memory device 108 tohydrogen. In some embodiments, the PVD deposited material may have awider portion adjacent to uppermost surface 108B and a narrower portionon sidewall 108A, as shown. The second deposition process may utilize acombination of CVD and ALD processes to provide uniform deposition, forexample between adjacent memory devices 108. In some such embodiments,the dielectric 116 includes a same material as the material of the thinlayer of dielectric 116B. In other embodiments, where S_(M) is 20 nm orless, a dual deposition process described above can form a keyhole or anair gap between adjacent memory devices 108.

Some of the dielectric 116 materials can be deposited by a single ALDdeposition process because they may be deposited by a hydrogen freeprecursor. In other embodiments, a first process may include ALD todeposit thin layer of dielectric 116B, followed by a bulk dielectricdeposition using a CVD or a PVD process. It is to be appreciated thatthin layer of dielectric 116B may include a different material thandielectric 116. Such an embodiment is described below in associationwith FIGS. 22A-22D.

In the illustrative embodiment, the dielectric 116 is blanket depositedon the memory device 108, on exposed portions of conductive fillmaterial 115 and conductive hydrogen barrier 114. The dielectric 116 isdeposited to a vertical thickness, T_(DL), that is equal to or greaterthan a height of a via to be fabricated in the logic region 101B. Thematerial of the dielectric 116 can be chosen based on the material ofthe ferroelectric dielectric layer 130 in the memory device 108, asdiscussed above. By pairing the dielectric 116 with the ferroelectricdielectric layer 130 can minimize lattice dislocations that can causevoids and potential pathways for hydrogen diffusion.

In some embodiments, the plasma etch process described in associationwith FIG. 8D can recess portions of the conductive fill material 115.The shape of resulting conductive fill material 115 and resultingstructure of dielectric 116 is illustrated with respect to portions 900in FIGS. 9B and 9C. FIG. 9B is a cross-sectional illustration of thestructure within portion 900 in FIG. 9A, in accordance with anembodiment of the present disclosure. In some such embodiments,conductive fill material 115, as shown in portion 900A, may havesurfaces that are at different levels or recessed relative to uppermostsurface 115C. For example, as shown, conductive fill material 115includes a surface 115D that is recessed relative to uppermost surface115C, where the uppermost surface 115C and a lower most surface ofmemory device 108 meet at interface 901. In some such embodiments, thesurface 115D may be substantially planar, and sidewall 115E may besubstantially vertical as shown. In some embodiments, the conductivehydrogen barrier 114 can be substantially unimpacted by the etch processas shown. In the illustrative embodiment, dielectric 116 also fills thespace above the surface 115D and below an interface 901 between memorydevice 108 and the conductive fill material 115. When dielectric 116 isdeposited, dielectric 116 is contact with surface 115D, sidewall 115Eand vertical portion 114B of conductive hydrogen barrier 114.

In other embodiments, the conductive fill material 115 is recessed withless well defined surfaces and sidewalls compared to conductive fillmaterial 115 in FIG. 9B. FIG. 9C is a cross-sectional illustration ofthe structure within portion 900 in FIG. 9A, in accordance with anembodiment of the present disclosure. As shown in portion 900B, exposedsurfaces of conductive fill material 115 are recessed to produce agradually sloped surface away from the sidewall of memory device 108.The sloping surface is curved as shown. The conductive fill material 115has a thickness T_(FM) as measured from the interface 901 between theconductive fill material 115 and memory device 108. T_(FM) decreasesfrom a maximum thickness, T_(FMX), under the memory device 108 to a minthickness T_(FM1) where conductive fill material 115 is directly incontact with vertical portion 114B of conductive hydrogen barrier 114.T_(FM) changes along the x-direction. As shown, T_(FM) decreases awayfrom sidewall 108A. In the illustrative embodiment, dielectric 116 alsofills the space above the sloping surface 115F and below an interface901 between memory device 108 and conductive fill material 115. Whendielectric 116 is deposited, dielectric 116 is contact with surface 115Fand sidewall portion 114B of conductive hydrogen barrier 114.

In some embodiments, where W_(ES) is less than W_(MD), memory device 108is in contact with an uppermost surface 113A of etch stop layer 113 asshown in portion 900D in FIG. 9D. In some embodiments, the plasma etchprocess utilized to form memory device 108 will also recess portions ofthe uppermost surface 113A that is not covered by the memory device 108.In some such embodiments, the dielectric 116 is also deposited below aninterface 903 between the memory device 108 and etch stop layer 113. Thedielectric 116 is in contact with sidewall 113B and recessed surface113C. The etch stop layer 113 has a thickness T_(L) as measured from theinterface 903 between the etch stop layer 113 and memory device 108.T_(L) decreases from a maximum thickness, T_(LX), under the memorydevice 108 to a min thickness T_(L1) away from sidewall 108A. As shown,T_(L) is substantially uniform away from sidewall 108A.

In other embodiments, where W_(ES) is less than W_(MD). the etch stoplayer 113 is recessed with less well defined surfaces and sidewallscompared to etch stop layer 113 in FIG. 9D. As shown in portion 900E ofFIG. 9E, exposed surfaces of etch stop layer 113 are recessed to producea gradually sloped surface away from the sidewall of memory device 108.The sloping surface is curved as shown. The etch stop layer 113 has athickness T_(L) as measured from the interface 903 between the etch stoplayer 113 and memory device 108. T_(L) decreases from a maximumthickness, T_(LX), under the memory device 108 to a min thickness,T_(L1), away from sidewall 108A, T_(L1) decreases away from sidewall108A. In the illustrative embodiment, dielectric 116 also fills thespace above the sloping surface 113D and below an interface 903. Whendielectric 116 is deposited, dielectric 116 is contact with surface113D.

In various embodiments, discussed with reference to FIGS. 9B-9D,conductive hydrogen barrier 114, etch stop layer 113 and dielectric 116combine to provide a conductive and an insulative hydrogen barrier.

FIG. 10A is a cross-sectional illustration of the structure in FIG. 9Afollowing the process to form openings 1000 in the dielectric 116through a mask 1001. The openings 1000 may have sidewalls that aresubstantially vertical or flared. In the illustrative embodiment, thesidewalls of opening 1000 are substantially vertical. Mask 1001 may beformed on the dielectric 116 by a lithographic process. The openings1000 may be formed by a plasma etch process that etches dielectric 116but is selective to top electrode 132 of memory device 108. In someembodiments, the opening 1000 exposes a portion of the uppermost surface108B of the memory device 108. In other embodiments, the openings 1000are wider and expose an entire upper most surface 108B. In someembodiments, when openings 1000 exposes the entire uppermost surface108B, etch process may recess portions of dielectric 116 adjacent to topelectrode 132. In some embodiments, openings 1000 can have a depth Do,between 30 nm-70 nm. The Do may be larger than a final verticalthickness of via electrode that is fabricated due to plurality ofplanarization process operations to be utilized.

FIG. 10B is a cross-sectional illustration of the structure in FIG. 10Afollowing the process to deposit materials to form via electrodes. Inthe illustrative embodiment, conductive hydrogen barrier material 1002is blanket deposited into the openings 1000, on the memory device 108and on sidewall of dielectric 116. The conductive hydrogen barriermaterial 1002 includes a material that is compatible with the dielectric116 so that an interface 1004 between the conductive hydrogen barriermaterial 1002 and the dielectric 116 is not a source of dislocations.

In an embodiment, a liner layer material 1006 is blanket deposited inthe openings 1000, and on the conductive hydrogen barrier material 1002.A layer of fill metal 1008 is deposited into the remaining portions ofopenings 1000 on the liner layer material 1006.

In embodiments, the conductive hydrogen barrier material 1002, the linerlayer material 1006 and layer of fill metal 1008 are deposited by anALD, PVD or sputter deposition process.

FIG. 10C is a cross-sectional illustration of the structure in FIG. 10Bfollowing the process to planarize and form a via electrode 118 on eachmemory device 108 and following the process to remove dielectric 116from the logic region 101B.

In an embodiment, the planarization process includes a chemicalmechanical planarization (CMP) process. The CMP process removes layer offill metal 1008, liner layer material 1006 and the conductive hydrogenbarrier material 1002 from an uppermost surface 116A of the dielectric116. The planarization process isolates the conductive hydrogen barriermaterial 1002 to form a conductive hydrogen barrier 114, liner layermaterial 1006 to form liner layer 122 and the layer of fill metal 1008form conductive fill material 124 within the openings 1000. The CMPprocess may also reduce the as deposited thickness of the dielectric116.

After the process to fabricate via electrodes 118. A mask 1010 is formedon the dielectric 116 to further pattern and remove the dielectric 116from the logic region 101B. It is to be appreciated that whiledielectric 116 is utilized to block diffusion of hydrogen toward memorydevice 108, dielectric 116 includes a material that has a high filmdensity. Dielectric 116 may also have a higher than desirable dielectricconstant capable of increasing capacitance to the logic interconnectcircuitry. It is advantageous to replace the dielectric 116 in the logicregion 101B with a dielectric that is compatible with interconnectcircuitry. In an embodiment, a plasma etch process is utilized to etchthe dielectric 116, form an opening 1011 and expose the etch stop layer113 in logic region 101B. In some embodiments the dielectric 116 has asidewall profile that is substantially vertical. In other embodiments.Sidewall 116A is tapered as indicated the dashed line 1012.

FIG. 10D is a cross-sectional illustration of the structure in FIG. 10Cfollowing the process to deposit a dielectric 142 in the logic region101B and planarizing the dielectric 142. In an embodiment, thedielectric 142 is blanket deposited on the etch stop layer 113, on thedielectric 116 and on via electrodes 118. The blanket deposition may becarried out by an ALD, PVD, PECVD, or a CVD process. After depositionthe dielectric 142 is planarized. The planarization process is designedto leave a dielectric 142 having a vertical thickness, To, that willaccommodate fabrication of a via structure and metal lines within thedielectric 142. In the illustrative embodiment, the dielectric 116 hasan uppermost surface 116A that is co-planar or substantially co-planarwith an uppermost surface 142A of dielectric 142. Also as shown,uppermost surfaces 118A of via electrodes 118 are co-planar orsubstantially co-planar with the uppermost surface 142A, and 116A.

FIG. 10E is a cross-sectional illustration of the structure in FIG. 10Dfollowing the process to form mask 1013 on dielectrics 116 and 142, andon the via electrodes 118, and following the process to etch dielectric142 to form hanging trench openings 1014A and 1014B in logic region101B. Mask 1013 is designed to form an interconnect structure in logicregion 101B. In an embodiment, mask 1013 is formed by a lithographicprocess and includes a photoresist material. In different embodiments,D_(H) can be equal, less than or greater than D_(V). In general D_(H)may depend on interconnect circuitry within level 106.

In an embodiment, a plasma etch process is utilized to etch dielectric142 through openings in mask 1013 to form hanging trench openings 1014Aand 1014B. Dielectric 142 may be etched to a depth, D_(H) and a width,W_(H), that is determined by a thickness To, of dielectric 142 above theetch stop layer 113. D_(H) is measured relative to an uppermost surface142A. In embodiments, D_(H) ranges between 10 nm and 50 nm and W_(H)ranges between 10 nm and 200 nm. W_(H) is determined by a width ofinterconnect vias to be formed within the trench. D_(H) may be set by aheight and width of a via to be formed within hanging trench opening1014A. The height and width of a via is determined by a desired minimumline conductance of the via and a metal line to be formed within hangingtrench opening 1014A.

FIG. 10F is a cross-sectional illustration of the structure in FIG. 10Efollowing the process to form a form a via mask 1015 within the hangingtrench in logic region 101B. In an embodiment, mask utilized to formhanging trench openings 1014A and 1014B is removed and a via mask 1015is formed. In an embodiment, via mask 1015 is formed by a lithographicprocess and includes a photoresist material. Via mask 1015 has anopening 1017 within hanging trench opening 1014A that is designed toenable etching dielectric 142 to form a via opening in a subsequentoperation. The opening 1017 has a lateral thickness W_(V). The openingmay be symmetric about the hanging trench opening 1014A or offset. W_(V)can range between 25%-75% of W_(H).

FIG. 10G is a cross-sectional illustration of the structure in FIG. 10Ffollowing the process to etch dielectric 142 to form a via opening 1017Abelow the hanging trench opening 1014A in logic region 101B. In anembodiment, a plasma etch process is utilized to form via opening 1017Aby etching the dielectric 142 and etch stop layer 113. In an embodiment,the dielectric 142 is first etched and the etch is halted after exposingetch stop layer 113. The plasma etch process is continued with adifferent chemistry to etch etch stop layer 113. An advantage of theprocess methodology outlined herein, is that etch stop layer 113 has athickness, T_(L), that is determined by a deposition process and by theformation of electrode structure 112 in memory region 101A. Formation ofvia opening 1017A within etch stop layer 113 can be targeted and tunedby fixing a thickness of the etch stop layer 113 to a desired thickness.In the illustrative embodiment, the formation of via opening 1017Aexposes an uppermost surface 134A of conductive interconnect 134. Thevia opening 1017A may have a first slope within dielectric 142 and asecond slope within etch stop layer 113 due to a difference in materialbetween the dielectric 142 and etch stop layer 113.

FIG. 10H is a cross-sectional illustration of the structure in FIG. 10Gfollowing the process to remove mask utilized to form via opening withinthe hanging trench opening 1014A and deposit a conductive material intothe openings to form via structure 140, and metal lines 136. Maskutilized to form via opening 1017A is removed and a conductive materialis deposited into the hanging trench openings 1014A and 1014B and viaopening 1017A. In an embodiment, depositing the conductive materialincludes depositing a liner layer 1018 in the via opening 1017A, hangingtrench opening 1014A, and 1014B. In some such embodiments, the linerlayer 1018 is also deposited on uppermost surface 134A of the conductiveinterconnect 134, on sidewalls of etch stop layer 113, dielectric 142,on uppermost surface 142A and on surfaces of via electrodes 118. A fillmaterial 1020 is deposited on the liner layer 1018. In some embodiments,fill material 1020 includes copper, tungsten, nickel or cobalt, andliner layer 1018 includes ruthenium tantalum, or nitrides of tantalum ortitanium. In other embodiments where no liner is implemented a fillmetal or a conductive material is directly deposited on uppermostsurface 134A of the conductive interconnect 134, on sidewalls of etchstop layer 113, dielectric 142, on uppermost surface 142A and onsurfaces of via electrodes 118.

A planarization process may be utilized to remove an excess conductivematerial deposited on dielectric 142 and on via electrodes 118. In anembodiment, the planarization process includes a chemical mechanicalpolish (CMP) process. The CMP process isolates metal lines 136 and 138within hanging trench openings 1014A and 1014B. Via structure 140 isformed at the same time as metal line 138. The liner layer is contiguousbetween via structure 140 and metal line 138 and fill material 1020extends continuously from metal line 138 to via structure 140.

In the illustrative embodiment, uppermost surfaces 118A of via electrode118 and uppermost surfaces 136A, 138A of metal line are co-planar orsubstantially co-planar after the CMP process.

In general, via electrodes 118 may be fabricated before or afterfabrication of via structure 140 and metal line 138. The methoddescribed in association with FIGS. 8A-F can be performed so as tofabricate via structure 140 and metal line 138 prior to fabrication ofvia 116, as is described herein.

In some embodiments, the memory device 108 may be taller such that thevia structure 140 is confined to level 106 and metal lines 136 and 138are on a level above level 106. In some such embodiments, the viaelectrodes may be fabricated before via structure 140 and metal lines136 and 138 or after. In some such embodiment, via structure 140 may notbe formed within a hanging trench opening 1014A.

FIG. 11A is a cross-sectional illustration of the structure in FIG. 10Dfollowing the process to form via electrodes 118, in accordance with anembodiment of the present disclosure. After formation of via electrodes118, an opening 1100 is formed in the dielectric 142. An opening 1100 isformed by forming a mask 1103 on the dielectric 116 and 142, and on thevia electrodes 118. In an embodiment, opening 1100 is formed by etchingthe dielectric 142 and the etch stop layer 113 and exposing conductiveinterconnect 134. Opening 1100 has a width, W_(VE) that may besubstantially the same as width of via structure 140 (FIG. 10H).

FIG. 11B is a cross-sectional illustration of the structure in FIG. 11Afollowing the process to form via structure 1101. The process furtherincludes depositing a liner layer 1102 in the opening 1100, on theconductive interconnect 134, on sidewalls of dielectric 142 and ofsidewalls of etch stop layer 113 and on the conductive interconnect 134.A fill material 1104 may then deposited on the liner layer 1102. Aplanarization is performed after the deposition process. In someembodiments, liner layer 1102 includes a material that is the same orsubstantially the same as the material of the liner layer 1018. In someembodiments, fill material 1104 includes a material that is the same orsubstantially the same as the material of the fill material 1020. Linerlayer 1102 and fill material 1104 may be formed by a substantiallyidentical process utilized to form liner layer 1018 and fill material1020 described in association with FIG. 10H.

FIG. 11C is a cross-sectional illustration of the structure in FIG. 11Bfollowing the process to deposit a dielectric 204 to form a level 1106.The level 1106 is the same as level 202 described in association withFIG. 2 . In an embodiment, the dielectric 204 includes a material thatis the same or substantially the same as the material of the dielectric142 and is deposited to a thickness desirable to form electrodes in thememory region and metal lines in the logic region. In other embodimentsdielectric 204 includes a material that is different from dielectric142. In some embodiments, dielectric 204 includes a substantiallysimilar base material as dielectric 142, for example, silicon andoxygen, but includes various concentrations of one or more of carbon ornitrogen. In other embodiments, dielectric 204 includes a substantiallysimilar base material as dielectric 142, for example, silicon andoxygen, but includes various concentrations of carbon but excludesnitrogen. In yet other embodiments, dielectric 204 includes asubstantially similar base material as dielectric 142, for example,silicon and oxygen but where the materials have different densities. Itis to be appreciated that dielectric 204 includes a material that can bedeposited at lower temperatures and have a lower film density thandielectric 116. Dielectric 204 may not be required to provide adiffusion barrier capability like dielectric 116. The conductivehydrogen barrier 120 within via electrode 118 permits a dielectric 204having a higher porosity film with a low film density to be depositedinstead of another dielectric similar to dielectric 116. Additionally,depositing a material with lower film density can facilitate a singledeposition over the logic and memory regions 101B and 101A,respectively. No further etching and removing of a dielectric materialfrom the logic region is required, eliminating further fabricationprocess operations and reducing cost. In an embodiment, a plurality ofopenings are formed simultaneously in the dielectric 204. Metal lines1107 and 1108 are formed within the openings formed in the dielectric204 in the logic region. In the illustrative embodiment, in contrast tometal line 138, metal line 1108 includes a liner layer 1110 that isdirectly above and laterally on an uppermost surface of fill material1104, and in contact with liner layer 1102. As shown, fill metal 1111may be discontinuous from the fill material 1104. The liner layer 1110provides adhesion for fill metal 1111. The deposition and planarizationprocesses utilized to form metal lines 1107 and 1108 are substantiallythe same as the deposition and planarization processes utilized tofabricate via structure 208.

In some embodiments, liner layer 1110 and fill metal 1111 includes amaterial that is the same or substantially the same as the material ofthe liner layer 1102 and fill material 1104. Depending on a width ofmetal lines 1107 and 1108, liner layer 1110 may be thicker than linerlayer 1102 and may include a material that is different from liner layer1102. In some embodiments, liner layer 1110 may have a thickness that isless than 5 nm and any reduction in electrical conductance may benegligible.

FIG. 11D is a cross-sectional illustration of the structure in FIG. 11Cfollowing the process to form openings 1109 to form electrodes in thememory region 101A. In the illustrative embodiment, openings 1109 areformed in the dielectric 204. Openings 1109 expose the via electrodes118. Openings 1109 may be formed by forming a mask on the dielectric 204and patterning the dielectric 204 in the memory region 101A. In theillustrative method embodiments, openings 1109 may be smaller than,substantially the same size as or larger the via electrodes 118. Thismethod also offers an advantage over methods that simultaneously formopenings 1109 and a via opening for via electrode 118. Misalignmentsbetween opening 1109 and via electrode 118, by up to 50% of W_(VE) maybe acceptable. Openings 1109 have a lateral thickness, W_(V). Inembodiments, where the openings 1109 are larger than via electrodes 118,i.e., W_(V) greater than W_(VE), dielectric 116 is also exposed whileforming openings 1109, as shown.

FIG. 11E is a cross-sectional illustration of the structure in FIG. 11Dfollowing the process to form an electrode 1120 on each of the viaelectrodes 118. Electrode 120 may be a trench electrode 1120. In theillustrative embodiment, a conductive hydrogen barrier 1112 is blanketdeposited on the surface of the via electrode 118, on portions of thedielectric 116, on sidewalls of dielectric 204 and on an uppermostsurface 204A of the dielectric 204 and on the metal lines 136 and 1108.The conductive hydrogen barrier 1112 may be deposited by an atomicdeposition layer process that provides for substantially uniformdeposition on via electrode 118 as well as on sidewalls of dielectric204. In the illustrative embodiment, the conductive hydrogen barrier1112 extends over and is in contact with the conductive hydrogen barrier120, liner layer 122 and conductive fill material 124.

The deposition process continues with the formation of a liner layer1114 in the openings 1109 on the conductive hydrogen barrier 1112. Afill metal 1116 is then deposited on the liner layer 1114 in openings1109. A planarization process includes a CMP process that is performedto remove the fill metal 1116, the liner layer 1114 and the conductivehydrogen barrier 1112 from on or above the uppermost surface 204A. In anembodiment, the CMP process forms an electrode 1120 on via electrode118. In various embodiments, conductive hydrogen barrier 1112 includes amaterial that is the same or substantially the same as the material ofthe conductive hydrogen barrier 114; liner layer 1114 includes amaterial that is the same or substantially the same as the material ofthe liner layer 122, and conductive fill metal 1116 includes a materialthat is the same or substantially the same as the material of theconductive fill material 124. As shown, electrode 1120 has an uppermostsurface 1120A that is substantially planar. The surface 1120A can beco-planar or substantially co-planar with uppermost surface 1108A of themetal line 1108.

The metal lines 1107 and 1108, and electrodes 1120 are fabricatedindependently of a thickness requirement for the memory device andoffers process flexibility. The electrode 1120 may be substantiallysimilar to a contact electrode 206, that is shaped in a trench, depictedin FIGS. 4A and 4B that couple a plurality of memory devices along they-direction. In some such embodiments, the trench electrode 1120 couplesa memory device such as memory device 302 on a plane behind a plane ofthe memory device 108.

In other embodiments, electrode 1120 is a trench electrode 1120 thatcouples two or more memory devices 108 along the x-direction asillustrated in FIG. 11F (trench electrode 1120 may also be a contactelectrode). The surface 1120A can be co-planar or substantiallyco-planar with uppermost surface 1108A of the metal line 1108 as shown.

In some such embodiments, the conductive hydrogen barrier 1112 alsoextends on dielectric 116 between adjacent memory devices 108. As shown,liner layer 1114 and fill metal 1116 also extend over dielectric 116.

In some embodiments, the via structure 1101, metal lines 1107 and 1108may be fabricated prior to formation of the via electrodes 118 andelectrodes 1120. In some such embodiments, the opening for electrode1120 is made prior to forming an opening for a via electrode. Theprocess is substantially similar to the process described in associationwith FIGS. 10F-G.

In some embodiments, where the combined height of memory device 108 andvia electrode 118, (T_(MD)+T_(VE)) is substantially equal to a height ofvia structure 208, the dielectric 142 may not be planarized to a levelof the uppermost surface 116A of dielectric 116 in the memory region101A. In some such embodiments, dielectric 142 extends over dielectric116 in the memory region 101A, as illustrated in FIG. 12A. FIG. 12A is across-sectional illustration of the structure in FIG. 10D following theprocess to planarize dielectric 142. In an embodiment, the planarizationprocess leaves a thickness, T_(O1) of dielectric 142 above dielectric116 that is sufficient to fabricate electrodes above the via electrodes118 and metal lines above a via in the logic region. Vertical thickness,T_(O2) is equal to vertical thickness of a via and a thickness of metallines to be fabricated in the logic region 101B.

FIG. 12B is a cross-sectional illustration of the structure in FIG. 12Afollowing the process to form via structure 1200, and metal lines 1202and 1204. In an embodiment, the process utilized to form via structure1200, and metal lines 1202 and 1204 includes a process that is the sameor substantially the same as the process utilized to form via structure140, and metal lines 136 and 138 (described in association with FIGS.10E-10H), in accordance with an embodiment of the present disclosure. Inthe illustrative embodiment, the via structure 1200 includes a linerlayer 1206 and a fill material 1208 on liner layer 1206. In someembodiments, liner layer 1206 includes a material that is the same orsubstantially the same as the material of the liner layer 1018. In someembodiments, fill material 1208 includes a material that is the same orsubstantially the same as the material of the fill material 1020. In anembodiment, the materials utilized to form via structure 1200, and metallines 1202 and 1204 include materials that are the same or substantiallythe same as the materials utilized to form via structure 140, and metallines 136 and 138, (described in association with FIGS. 10E-10H).

It is to be appreciated that lower most surface 1202A of metal line 1202and lower most surface 1204A of metal line 1204 can be at a level thatis below the uppermost surface 116A of dielectric 116. A plasma etchprocess utilized to form hanging trenches to form metal lines may betargeted to approximately achieve a desired depth in dielectric 142. Insome embodiments, lower most surface 1202A of metal line 1202 and lowermost surface 1204A of metal line 1204 can be at a level that is at theuppermost surface 116A of dielectric 116, as shown. In otherembodiments, lower most surface 1202A of metal line 1202 and lower mostsurface 1204A of metal line 1204 can be at a level that is above theuppermost surface 116A of dielectric 116.

After formation of via structure 1200, and metal lines 1202 and 1204,the process is continued to form openings 1205 in the dielectric 142 inthe memory region. The process utilized to form openings may be the sameor substantially the same as process utilized to form openings 1109(described in association with FIG. 11D), in accordance with anembodiment of the present disclosure.

FIG. 12C is a cross-sectional illustration of the structure in FIG. 12Bfollowing the process to form an electrode 1120 on a respective viaelectrode 118. In an embodiment, the process utilized to form electrodes1120 is described in association with FIGS. 11D-11E.

In some embodiments, via and one or more metal lines in the logic regionmay be fabricated first and then via electrodes may be fabricated in thememory region. FIG. 13A is a cross-sectional illustration of thestructure in FIG. 11C, in an embodiment where via electrodes are not yetfabricated above a respective memory device 108.

FIG. 13B is a cross-sectional illustration of an embodiment of thestructure in FIG. 13A following the formation of trench openings 1300 inthe dielectric 204 above a respective memory device 108. The trenchopenings 1300 may be made by forming a mask on the dielectric 204 andetching the dielectric 204. Depending on the material of dielectric 116,dielectric 116 may act as an etch stop while etching to form openings1300. The openings 1300 have a width, W_(E). W_(E) may be greater thanor less than W_(MD). Depending on embodiment, openings 1300 may be atrench openings 1300 or via openings 1300. A trench opening 1300 maycouple two or more memory devices such as memory device 108 and memorydevice 302 depicted in FIG. 4A.

FIG. 13C is a cross-sectional illustration of the structure in FIG. 13Bfollowing the process to etch dielectric 116 to form a via opening 1302below the trench opening 1300 in memory region 101A. In an embodiment,mask 1304 is formed on the dielectric 204 and on metal lines 1107 and1108, and on dielectric 204 by a lithographic process. Mask 1304 mayinclude a photoresist material. Mask 1304 has an opening within hangingtrench opening 1300 that is designed to enable etching the dielectric116 to form a via opening. In an embodiment, the dielectric 116 isetched by a plasma etch process. The etch process is halted afteruppermost surface 108B of the memory device 108 is exposed. Via opening1302 has a lateral thickness W_(VE). In the method illustrated herein,W_(V) is at least equal to or greater than W_(VE). In such examples,W_(VE) may be greater than or less than W_(MD). In the illustrativeembodiment, W_(VE) is less than W_(MD). In some such embodiments, theuppermost surface 108B is designed to protected by a combination ofconductive and insulative hydrogen barrier materials.

FIG. 13D is a cross-sectional illustration of the structure in FIG. 13Cfollowing the process to fabricate a contact electrode 206 on the viaelectrode 118, above a respective memory device 108. In an embodiment,the mask utilized to form via openings 1302 may be removed by a plasmaashing or a wet chemical dissolution method. In the illustrativeembodiment, electrode 118 and contact electrode 206 may be formed bysingle deposition process for each layer of material required. inaccordance with embodiments of the present disclosure, conductivehydrogen barrier 120 is blanket deposited into the openings 1300, and1302 on the memory device 108, on sidewalls of dielectric 116, anddielectric 204 and on uppermost surface 204A. The conductive hydrogenbarrier 120 is contiguous within the openings 1300 and 1302, as shown.The conductive hydrogen barrier 120 includes a material that is mostcompatible with the dielectric 116 so that an interface between theconductive hydrogen barrier 120 and the dielectric 116 is not a sourceof dislocations. In the illustrative embodiment, material of liner layer122 is blanket deposited in the openings 1300 and 1302 on the conductivehydrogen barrier 120. A layer of conductive fill material 124 isdeposited into the remaining portions of openings 1300 and 1302 on thematerial of liner layer 122.

In embodiments, the material of conductive hydrogen barrier 120,material of the liner layer 122 and layer of conductive fill material124 are deposited by an ALD, PVD or a sputter deposition process. In anembodiment, the planarization process includes a chemical mechanicalplanarization (CMP) process. In an embodiment, the CMP process removesthe excess layer of conductive fill material 124, material of linerlayer 122 and conductive hydrogen barrier 120 from an uppermost surface204A of dielectric 204. The planarization process isolates theconductive hydrogen barrier 120, conductive fill material 124, linerlayer 122 and conductive hydrogen barrier 114 from each via electrode118. The CMP process may also reduce the, as deposited, thickness of thedielectric 204.

FIG. 14A is an illustrative embodiment of the structure in FIG. 12B,prior to the formation of via electrodes 118 above memory device 108. Inthe illustrative embodiment, metal lines 1202 and 1204 and via structure1200 are fabricated by a method that is the same or substantially thesame as the method described in association with FIGS. 12B. In theillustrative embodiment, metal lines 1202 and 1204 and via structure1200 are fabricated by a method that is the same or substantially thesame as the method described in association with FIGS. 12B.

In an embodiment, the metal lines 1202 and 1204 have a verticalthickness T_(M), relative to a relative to uppermost surface 142A.Portions of the metal lines 1202 and 1204 may extend below uppermostsurface 116A due to the etch process utilized to form hanging trenchopenings.

FIG. 14B is an illustrative embodiment of the structure in FIG. 14A,following the process to form a plurality of openings 1400 and 1402. Inan embodiment, the method utilized to form openings 1400 and 1402 is thesame or substantially the same as the method utilized to form openings1300 and 1302 described in association with FIGS. 13B and 13C. A mask1403 may be utilized to mask portions of openings 1400 and form openings1402.

FIG. 14C is a cross-sectional illustration of the structure in FIG. 14Bfollowing the process to fabricate via electrode 118 and contactelectrode 206. In an embodiment, via electrode 118 and contact electrode206 are formed by a method that is the same or substantially the same asthe method described in association with FIG. 13D.

In other embodiments, a single via opening may be made in thedielectrics 116 and 204 above each memory device 108. The operation tomake a single via electrode is described in association with FIGS.15A-15B. A single via electrode may be desirable when the height, T_(V),of via structure 208 is comparable to the height, T_(MD) of memorydevice 108. A single via electrode can also provide flexibility tocouple different memory devices as will be shown in FIGS. 15C-15D.

FIG. 15A is a cross-sectional illustration of the structure in FIG. 11E,in an embodiment where via electrodes and electrodes on top of viaelectrodes are yet to be fabricated.

In some embodiments, an opened is formed in dielectrics 204 and 116 atthe same time after fabrication of metal lines 1107 and 1108 and viastructure 208. In an embodiment, a mask 1500 is formed on the dielectric204 and on the of metal lines 1107 and 1108. A plasma etch process isutilized to etch dielectric 204 through openings in the mask 1500 toform opening 1502. The plasma etch process may be continued to etchdielectric 116, after etching dielectric 204. In the illustrativeembodiment, the opening 1502, have a substantially uniform width, W_(VE)in both materials, dielectric 204 and dielectric 116. In otherembodiments, there may be some taper in the dielectric 116 anddielectric 204 as indicated by dashed lines 1503. The sidewalls ofopenings may be tapered defined by a single taper angle or be graduallytapered.

FIG. 15B is a cross-sectional illustration of the structure in FIG. 15Afollowing the process to form via electrode 118 having a first portionwithin the dielectric 116 having a high film density a second portionwithin dielectric 204 having a low film density in accordance with anembodiment of the present disclosure. In an embodiment, the process toform via electrode 1504 is the same or substantially the same asformation of contact electrode 206 and via 118 (described in associationwith FIG. 12C). In the illustrative embodiment, via electrode 1504 doesnot extend beyond a periphery of the memory device 108 and includes afirst portion 1504A adjacent to dielectric 116 and a second portion1504B adjacent to dielectric 204. In an embodiment, portion 1504B has aheight T_(VE). The portion of opening 1502 that is within dielectric 204has a same or substantially the same plan view profile as the opening1502 that is within dielectric 116. In exemplary embodiments, unlikecontact electrode 206, portion 1504B does not extend along the y-axis inFIG. 15B.

FIG. 15C is a cross-sectional illustration of the structure in FIG. 15Bfollowing the process to form an opening 1506 between adjacent viaelectrodes 1504 that are spaced apart along the x-direction. In anembodiment, a mask 1508 is formed on the dielectric 204, on the metallines 1107 and 1108. As shown the mask includes an opening where thedielectric 204 is to be removed. A plasma etch process is utilized toremove the dielectric 204 from the opening in the mask 1508. In anembodiment, the dielectric 204 is etched selectively, by the plasma etchprocess, with respect to the materials of the via electrode 1504 anddielectric 116. The plasma etch process utilized may selectively removethe dielectric 204 with respect to conductive hydrogen barrier 120because of the differences in material. In some embodiments, thedielectric 116 may be reduced below uppermost surface 116A. In otherembodiments, the mask 1508 can be a hardmask, and a wet chemical processcan be utilized to recess dielectric 204 selectively against materialsof via electrode 1504. In some embodiments a combination of plasma etchand wet chemical etch is utilized to remove dielectric 204 effectivelyfrom sidewalls 120D to provide a sufficient surface area for contactwith a conductive bridge to be formed.

FIG. 15D is a cross-sectional illustration of the structure in FIG. 15Cfollowing the process to form a conductive bridge 1510 between adjacentvia electrodes 1504. In the illustrative embodiment, the processutilized to form the conductive bridge 1510 includes materials andprocesses utilized to fabricate via electrode 1504, described above. Inthe illustrative embodiment, a conductive hydrogen barrier 1512 is firstblanket deposited into the opening 1506, on the dielectric 204, againstouter sidewalls of conductive hydrogen barrier 120, on uppermost surface1504C of via electrode 1504, uppermost surfaces of metal line 1107 and1108. The deposition process continues with deposition of a liner layer1514 on the conductive hydrogen barrier 1512, followed by deposition ofa fill material 1516. There are numerous advantages in forming aconductive bridge 1510 after formation of the via electrode 1504 whereupper most surfaces 1510A are co-planar or substantially co-planar withuppermost surface 1504C of via electrode 1504. A conductive bridge 1510can be inserted between any two or more adjacent memory devices 108after the via electrodes are fabricated. Conductive bridge 1510 offersintegration flexibility to choose two or more memory devices 108 to beconnected by defining the layout of mask 1508. Secondly, the materialsincluded in the conductive bridge 1510 can be chosen independently ofthe materials of the via electrode 1504. While, in the illustrativeembodiment, conductive bridge 1510 includes conductive hydrogen barrier1512, and the liner layer 1514, in other embodiments, the conductivehydrogen barrier 1512, and the liner layer 1514 may be absent. Theconductive hydrogen barrier 120 and dielectric 116 in themselves offeradequate protection against hydrogen diffusion toward memory device 108.

FIGS. 16A-C depict various plan view embodiments of one or moreconductive bridges.

FIG. 16A is a plan view of the structure in FIG. 15D, in accordance withan embodiment of the present disclosure. In the illustrative embodiment,via electrode 1504 and the conductive bridge have substantiallyrectangular plan view profiles. The conductive bridge 1510 has a width,W_(B) (along the y direction) and the via electrode 1504 has a width,W_(VEY). W_(B) may be greater than, less than or equal to W_(MDY). Inthe illustrative embodiment, W_(B) is substantially equal to W_(VEY).W_(B) may be less than W_(VEY) as shown in FIG. 16B with as long asW_(B) is sufficiently wide to enable a minimum current conductance. Thememory devices 108 are not illustrated for clarity.

In other configurations via electrode 1504 may be present on a plane A,behind plane B, as shown in the plan-view illustration of FIG. 16C. Apair of via electrodes 1504 are coupled above a memory device 302(hidden under via electrode 1504). In some such embodiments, aconductive bridge 1610 may be further implemented to couple a pair ofvia electrodes 1504 on the plane A. Conductive bridge 1610 may beoriented parallel to conductive bridge 1510. The flexibility toimplement conductive bridges 1610 and 1510 is particularly advantageouswhen conductive bridges 1610 and 1510 have a substantially similar planview shape and size. A substantially similar plan view size can minimizevariations in depths, Doi, of openings that are filled with material ofconductive bridges 1510 and 1610 (such as opening 1506 in FIG. 15C). Inother embodiments, conductive bridges that are oriented perpendicular toconductive bridge 1510 or 1610 may also be formed sequentially orsimultaneously. Formation of perpendicularly oriented conductive bridgeprovides enhanced flexibility to couple arbitrary numbers of memorydevices. Such flexibility can be exercised by changing mask designinstead of process flow.

FIG. 17C is an embodiment of the structure in FIG. 7A, where W_(CI) isless than Wo, and surface 105B of dielectric 105 may be recessedrelative to an uppermost surface 105A (which is covered by the etch stoplayer 113). The photoresist mask 702 is removed in the illustration forclarity. A recess in the dielectric 105 may occur when there is a lossof selectivity or where there is limited selectivity between thematerial of the etch stop layer 113 and the dielectric 105. In some suchembodiments, sidewalls 102A of the conductive interconnect 102 areexposed after forming opening 701.

FIG. 17B is a cross-sectional illustration of the structure in FIG. 17Afollowing the process to form an electrode structure 112 having aportion below an uppermost surface 102B of the conductive interconnect102. In the illustrative embodiment, the conductive hydrogen barrier 114is formed on the recessed surface 105B, on a portion of sidewall 102A,and on uppermost surface 102B of conductive interconnect 102. Theconductive hydrogen barrier 114 is formed below uppermost surface 102B.Depending on W_(O), portions of conductive fill material 115 may aboveor below uppermost surface 102B.

FIG. 18A-C are cross-sectional illustrations depicting a method tofabricate an electrode structure having a conductive hydrogen barrierabove a fill metal.

FIG. 18A is a cross-sectional illustration of the structure in FIG. 7Afollowing the formation of conductive fill material within openings1801, in accordance with an embodiment of the present disclosure. In anembodiment, conductive fill material 115 is blanket deposited into theopening 1801, and on the etch stop layer 113. Portions of the conductivefill material 115 on the etch stop layer 113 are removed by aplanarization process leaving the conductive fill material 115 withinthe openings 1801. In an embodiment, a wet chemical process is utilizedto recess the conductive fill material 115 below the uppermost surface113A. In an embodiment, level of recess of conductive fill material 115relative to uppermost surface 113A will depend on T_(L) and on a desiredthickness of the conductive hydrogen barrier to be formed. In someembodiments, the conductive fill material 115 is recessed relative touppermost surface 113A by up to half of T_(L). In some embodiments,uppermost surface 115C of the conductive fill material 115 is concaveddue to wet chemical recess as indicated by dashed lines 1805. In anembodiment, a liner layer, indicated by dashed lines 1803 may bedeposited into each opening 1801 prior to deposition of the conductivefill material 115. The liner layer may be recessed at the same time asthe conductive fill material 115, prior to or after recessing theconductive fill material 115.

FIG. 18B is a cross-sectional illustration of the structure in FIG. 18Afollowing the process to deposit a conductive hydrogen barrier material1807 in each opening 1801. In an embodiment, the materials implemented,and process utilized to deposit conductive hydrogen barrier material1807 is the same or substantially the same as the material implementedand process utilized to deposit conductive hydrogen barrier material800, as described in association with FIG. 8A.

FIG. 18C is a cross-sectional illustration of the structure in FIG. 18Bfollowing the process to form a conductive hydrogen barrier 1808 on theconductive fill material 115. A planarization process may be utilized toremove an excess conductive hydrogen barrier material 1807 deposited onetch stop layer 113. In an embodiment, the planarization processincludes a chemical mechanical polish (CMP) process. The CMP processforms conductive hydrogen barrier 1808 within each opening 1801. In someembodiments, an uppermost surface 1808A of the conductive hydrogenbarrier layer 1808 is curved as indicated by dashed lines 1809. A curvedsurface can result from dishing during the CMP process. It is to beappreciated that when a material layer stack for the formation of memorydevice is deposited, a lowermost layer in the material layer stack mayfollow the contour of the curved surface. A curved surface can change avertical thickness (height) of the conductive hydrogen barrier 1808across the electrode structure 112. However, changes in thickness is notsubstantial to materially affect hydrogen barrier properties of theconductive hydrogen barrier 1808. The conductive hydrogen barrier 1808includes a material that is the same or substantially the same as thematerial of the conductive hydrogen barrier layer 114.

In the illustrative embodiment, the electrode structure 112 includes aconductive hydrogen barrier 1808 above the conductive fill material 115,where the conductive hydrogen barrier 1808 prevents hydrogen fromdiffusing towards a memory device to be formed above. Depending onembodiments, the electrode structure 112 has a width that can be greaterthan or less than a width of a memory device to be formed on electrodestructure 112. In either embodiment, conductive hydrogen barrier 1808can effectively prevent hydrogen from diffusing towards the memorydevice.

FIG. 19A is a cross-sectional illustration of the structure in FIG. 10Dfollowing the process to deposit dielectric 204 to form a level 1106.Material composition of dielectric 204 and method to deposit dielectric204 has been described above. In an embodiment, a plurality of hangingtrench openings 1901 and 1902 are formed simultaneously in thedielectric 204 in the logic region as shown. In an embodiment, a mask isformed on dielectric 204 and a plasma etch process is utilized to formhanging trench openings 1901 and 1902. In the illustrative embodiment,the etch process is halted after dielectric 142 is exposed.

FIG. 19B is a cross-sectional illustration of the structure in FIG. 19Afollowing the formation of a via opening 1905 within hanging trenchopening 1902, in accordance with an embodiment of the presentdisclosure. In an embodiment, a lithography process is utilized to forma mask 1903 on the dielectric 204. The dielectric 142 is etched to formvia 1905 that exposes conductive interconnect 134.

FIG. 19C is a cross-sectional illustration of the structure in FIG. 19Afollowing the process to form via structure 1200, and metal lines 1202and 1204. The method to form via structure 1200, and metal lines 1202and 1204 described above in association with FIGS. 10E-10H.

FIG. 19D is a cross-sectional illustration of the structure in FIG. 19Cfollowing the formation of openings 1906 in the dielectric 204 above arespective memory device 108. The openings 1906 may be made by forming amask on the dielectric 204 and etching the dielectric 204. Depending onthe material of dielectric 116, dielectric 116 may act as an etch stopwhile etching to form openings 1906. The openings 1906 have a width,W_(E). W_(E) may be greater than or less than W_(MD). Depending onembodiment, openings 1906 may be trench openings 1906 or via openings1906. A trench opening 1906 may couple two or more memory devices suchas memory device 108 and memory device 302 as depicted in FIG. 4A.

FIG. 19E is a cross-sectional illustration of the structure in FIG. 19Dfollowing the process to form an electrode 1120 on respective viaelectrodes 118. In an embodiment, the process utilized to formelectrodes 1120 is described in association with FIGS. 11D-11E.

In some embodiments, electrodes 1120 and metal lines 1202 and 1204 maybe co-fabricated. However, in some such embodiments, electrodes 1120 andmetal lines 1202 and 1204 may all include a same material. In some suchembodiments, simultaneous fabrication necessitates that electrodes 1120,metal lines 1202 and 1204, and via structure 1200 can all include aconductive hydrogen barrier material or completely exclude theconductive hydrogen barrier material.

FIG. 20A is a cross-sectional illustration of the structure in FIG. 10Dfollowing the process to deposit dielectric 204 and form a plurality ofopenings in the dielectric 204. In an embodiment, openings 2000, 2001,and 2002 are formed simultaneously by masking the dielectric 204 andutilizing a plasma etch process to etch dielectric 204. The dept, D_(M),of each opening 2000, 2001 and 2002 is substantially the same. In someembodiments, D_(M) may be different by less than 5% depending on arelative width of each opening. D_(M) can also be different based on thesimilarity between materials of dielectric 204 and dielectric 142. Ifthere is etch selectivity between dielectric 142 and 204 because ofdifferences in etch rates, then then D_(M) may be substantially thesame.

FIG. 20B is a cross-sectional illustration of the structure in FIG. 20Afollowing the process to form a via opening 2003 within opening 2002. Inan embodiment, the process to form via opening 2003 is substantially thesame as the process utilized to form via opening 1905 described inassociation with FIG. 19B. In the illustrative embodiment, mask 2005also covers openings 2000.

FIG. 20C is a cross-sectional illustration of the structure in FIG. 20Bfollowing the process to form electrodes 2006, via structure 1200 andmetal lines 1202 and 1204. In the illustrative embodiment, the mask 2005(FIG. 20B) is removed and a liner layer 1018 is deposited into viaopening 2003, and in openings 2000, 2001 and 2002, and on dielectric204. A fill material 1020 is deposited on the liner layer 1018. Aplanarization process may be performed to remove the liner layer 1018from above dielectric 204 and fill metal from above the liner layer 1018outside of openings 2000, 2001 and 2002. The planarization process formsmetal lines 1202 and 1204, via structure 1200, and electrodes 2006 aboveeach via electrode 118. It is to be appreciated that electrodes 2006 maynot have a conductive hydrogen barrier layer in contrast to the otherexamples described above. However, a lack of conductive hydrogen barrierlayer in the electrodes 2006 does not materially impact memory device108 performance because the uppermost surface 108B of memory device 108is protected by an insulative and a conductive hydrogen barriermaterial.

FIG. 21A is an illustrative embodiment of the structure in FIG. 13A,where metal lines 1202, 1204 and via structure 1200 are fabricated by amethod described in association with FIGS. 19A, 19B and 19C.

FIG. 21B is a cross-sectional illustration of the structure in FIG. 21Afollowing the process to form electrode structure 205. In an embodiment,the process to form electrode structure 205 is described in associationwith FIGS. 13A-13D.

In some embodiments, as described above in association in FIG. 1J, thedevice structure 100E includes a high density spacer directly adjacentto the memory device 108. FIGS. 22A-D are cross-sectional illustrationof a sequence of operations that depict an evolution of the structure inFIG. 8D to the structure in FIG. 1J.

FIG. 22A is a cross-sectional illustration of the structure in FIG. 8Dfollowing the process to deposit encapsulation layer 152. The processutilized to deposit encapsulation layer 152 depends on the materialutilized, on a height of memory device 108, as well as on the relativespacing between adjacent memory devices 108. In exemplary embodiments,the deposition process utilized to deposit encapsulation layer 152 doesnot include hydrogen or ammonia containing chemicals to prevent hydrogenexposure to layers within memory device 108.

In an embodiment, the encapsulation layer 152 includes an insulatormaterial. The insulator material includes a transition metal and oxygen,such as, but not limited to Al_(x)O_(y), HfO_(x), AlSiO_(x), ZrO_(x), orTiO_(x). Materials such as Al_(x)O_(y), HfO_(x), AlSiO_(x), ZrO_(x), orTiO_(x) can be deposited without a hydrogen or ammonia containingchemical precursor in an ALD deposition process. An ALD process may beadvantageous when an aspect ratio between adjacent memory devices 108 isgreater than 1:1. An aspect ratio is a ratio between height of memorydevice 108 to a spacing between adjacent memory devices 108, i.e.,T_(MD):S_(M). The encapsulation layer 152 may be deposited to athickness in the range of 0.5 nm-10 nm. However, when S_(M) isapproximately in the range of 20 nm, encapsulation layer 152 may bedeposited to a thickness of less than 5 nm. An ALD process can provide asubstantially conformal thickness on sidewalls 108A, as shown. In someembodiments, a PVD deposition process does not conformally deposit theencapsulation layer 152 with a uniform thickness TEC. In some suchembodiments, portions of the encapsulation layer 152 adjacent touppermost surface 108B is wider (illustrated by dashed lines 2201) thanportions adjacent to lowermost surface 108C.

In other embodiments when the aspect ratio is less than 1:1, a physicalvapor deposition (PVD) process may be utilized. In some suchembodiments, encapsulation layer 152 can include materials such ascompounds of nitrogen and a transition metal such as, but not limited toAN, ZrN, and HfN, or compounds of Si and O and one or more of Al, Hf orTa, such as, but not limited to, AlSiO_(x), HfSiO_(x) and TaSiO_(x). APVD process may not provide a substantially conformal deposition onsidewalls 108A. A thickness of approximately 2 nm may be sufficient toprevent hydrogen transport through an encapsulation layer 152 that isdeposited with a material density of at least 90%.

In the illustrative embodiment, the encapsulation layer 152 is blanketdeposited in the memory region 101A and in the logic region 101B.

FIG. 22B is a cross-sectional illustration of the structure in FIG. 22Afollowing the process to form via openings 2200 in a dielectric 116 andin the encapsulation layer 152. In the illustrative embodiment, adielectric 116 is deposited on the encapsulation layer 152. Thedielectric may be deposited by an ALD, PVD, CVD process. The depositionprocess and materials of dielectric 116 are described above. Inexemplary embodiments, dielectric 116 may include a material other thana material of the encapsulation layer 152. When an encapsulation layer152 is first deposited on sidewalls 108A, dielectric 116 can include amaterial that is deposited in the presence of a hydrogen or an ammoniaprecursor. In some such embodiments, dielectric 116 can include aninsulative high density material such as, but not limited to,Al_(x)O_(y), HfO_(x), ZrO_(x), TaO_(x), TiO_(x), AlSiO_(x), HfSiO_(x),TaSiO_(x), AN, ZrN, or HfN.

In the illustrative embodiment, the encapsulation layer 152 is blanketdeposited in the memory region 101A and in the logic region 101B and thedielectric 116 is blanket deposited on the encapsulation layer 152. Inother embodiments, the encapsulation layer 152 may be removed from thelogic region 101B prior to deposition of the dielectric 116.

After deposition of dielectric 116, a mask 2202 is formed on dielectric116. A plasma etch process may be utilized to form via openings 2200 inthe dielectric 116. The plasma etch removes portions of the dielectric116 through the mask 2202 and further etches a portion of theencapsulation layer 152 as shown.

FIG. 22C is a cross-sectional illustration of the structure in FIG. 22Bfollowing the process to form via electrodes 118. The deposition processutilized to deposit the conductive hydrogen barrier 114, liner layer 122and conductive fill material 124 is substantially the same as the methoddescribed in association with FIG. 10B. In the illustrative embodiment,conductive hydrogen barrier 120 is deposited on uppermost surface 108B,adjacent to encapsulation layer 152, and adjacent to dielectric 116 invia openings 2200. In some embodiments, where via opening 2200 is widerthan memory device 108, encapsulation layer 152 on uppermost surface108B is etched (as illustrated by dashed lines 2204). In some suchembodiments, the encapsulation layer 152 may also be recessed onsidewalls 108A and conductive hydrogen barrier 120 may be deposited on atop portion of sidewall 108A (as described in association with FIG. 1D).After deposition, a planarization process is utilized (as described inassociation with FIG. 10B) to form via electrode 118 on each memorydevice 108.

The dielectric 116 may be replaced by dielectric 142 in the logic region101B (as described in association with FIGS. 10C-10D). In theillustrative embodiment, dielectric 142 is blanket deposited on the etchstop layer 113. In exemplary embodiments, the encapsulation layer 152 isremoved from the logic region 101B prior to deposition of the dielectric142. The removal of encapsulation layer 152 from logic region 101B isdesirable to remove a high density film (greater than 90% film density).Depending on materials a high density film may have a high dielectricconstant (such above 4) and can cause electrical degradation ininterconnect operation due to higher charge storage capability.

FIG. 22D is a cross-sectional illustration of the structure in FIG. 22Cfollowing the process to form via structure 140 and metal lines 136 and138. The process to form via structure 140 and metal lines 136 and 138is the same or substantially the same as described in association withFIGS. 10E-10H. In the illustrative embodiment, formation of an openingto form via structure 140 includes further etching through encapsulationlayer 152 and additionally depositing liner layer 144 adjacent toencapsulation layer 152.

The encapsulation layer 152 has been discussed herein, in a structuralembodiment, where metal lines 136 and 138 are also formed at a samelevel as via electrode 118. In other embodiments, encapsulation layer152 may be formed in combination with various different electrodestructures, such as electrode structure 148. In yet other embodiments,encapsulation layer 152 may be formed in combination with dielectric204, 142 and 116.

In some embodiments, lateral thickness, W_(VE) of via electrode 118 isgreater than W_(MD). In some such embodiments via electrode 118 is on anentire uppermost surface 108B. In further some such embodiments, theetch utilized to form opening to form via electrode 118 can etchportions of dielectric 116 below uppermost surface 108B. The viaelectrode 118 can extend below uppermost surface 108B and on sidewalls108A as indicated by dashed box 2204.

While electrode structure 112 is illustrated in FIGS. 10A-15A, and in19A-22D, electrode structure 112 can be replaced in embodiments byelectrode structure 148, described in association with FIGS. 1H and 18C.

FIG. 23 illustrates computing architecture 2300 with a coherent cache ormemory-side buffer chiplet that includes a memory controller, whereinthe coherent cache or memory-side buffer chiplet is coupled to anaccelerator, a processor, and a memory, in accordance with someembodiments. Computing architecture 2300 comprises coherent cache ormemory-side buffer chiplet 2301, accelerator 2302 (e.g., inferencechip), processor (e.g., central processing unit CPU 2320), and memorydie 2304. In some embodiments, coherent cache or memory-side bufferchiplet 2301 comprises at least two channels 2315 which are configuredto connect with accelerator 2302 and CPU 2320. In some embodiments,coherent cache or memory-side buffer chiplet 2301 comprises I/O andcontroller 2319 to manage data traffic with memory die 2404. By movingcontroller 2319 from CPU 2320 to coherent cache or memory-side bufferchiplet 2301, cost in terms of power and die area for CPU 2320 isreduced. In some embodiments, coherent cache or memory-side bufferchiplet 2301 is a cache memory that comprises ferroelectric memorycells. For example, coherent cache or memory-side buffer chiplet 2301comprises one or more of: FE-SRAM, FE-DRAM, SRAM, MRAM, resistance RAM(Re-RAM), embedded DRAM (e.g., 1T-1C based memory), or a combination ofthem. Using FE-SRAM, MRAM, or Re-RAM allows for low power and high-speedmemory operation

FIG. 24 illustrates architecture 2400 of the coherent cache ormemory-side buffer chiplet (e.g., 2407) with multiple controllers andmultiple cache banks, in accordance with some embodiments. In someembodiments, architecture 2400 comprises channels (e.g., ch0 2415-1 andch1 2415-2), cache banks 2401, local cache controller 2402, non-volatile(NV) controller 2403, and reliability logic 2404. Coherent cache ormemory-side buffer chiplet 2407 may function as a cache or memorybuffer. In some embodiments, cache lookups can map a large physicalmemory into a small physical cache using indirection via tags. Here,indirection refers to the use of tags to specify which address maps towhich physical location. If multiple addresses can map to a singlephysical location, a tag is used to figure out which address iscurrently mapped.

In some embodiments, each cache bank 2401 includes data bank 2405 (e.g.,comprising memory cells) and associated tags 2406. In some embodiments,data bank 2405 comprises ferroelectric memory cells. In someembodiments, data bank 2405 comprises one or more of: FE-SRAM, FE-DRAM,SRAM, MRAM, resistance RAM (Re-RAM), embedded DRAM (e.g., 1T-1C basedmemory), or a combination of them. Using FE-SRAM, MRAM, or Re-RAM allowsfor low power and high-speed memory operation. In some embodiments, whendata bank 2405 includes ferroelectric memory, it uses NV controller 2403and a stronger reliability logic (e.g., error correction code) forsecurity compared to non-ferroelectric memory for data bank 2405.

When data bank 2405 is used to implement a cache, tags may be used toidentify which addresses map to which physical locations in the bank.The cache may be set associative in which a particular address can mapto several physical locations. The specific physical location a newlyallocated address is mapped to may be determined by a replacementalgorithm such as LRU (least recently used) or pseudo-LRU, or evenrandom. On the other hand, the cache might be direct mapped, with eachaddress mapping to merely a single physical cache line. In both setassociative and direct mapped caches, several addresses map to a singlephysical cache line. To identify the address currently occupying thephysical cache line, a tag 2406 may be coupled with each physical line.Tag 2406 may comprise some address bits, sufficient to uniquely identifywhich address currently occupies the physical line coupled with the tag.

In some embodiments, cache controller 2402 could be used to controlstate transitions required for cache look ups such as comparingrequested addresses with tags stored in the tags 2406 and identifying acandidate for replacement (replacement algorithm) when a cache missoccurs. In addition, the cache controller could be tasked withinitializing the cache when the cache powers on. When FE memory of databank 2405, which retains state across power cycles, is used, cachecontroller 2402 could write O_(S) to all memory locations to ensure thatdata associated with previously executed programs is erased, thuspreventing any data leakage to subsequently executed programs. Thenon-volatile memory may also include an NV bit, which could indicatethat cache data is meant to be non-volatile and remain across powercycles. Cache controller 2402 would skip locations marked thus wheninitializing memory.

In some embodiments, reliability logic 2404 performs error correction tothe data. Any suitable error correction scheme (e.g., with errorcorrection code (ECC)) may be used by reliability logic 2404. In someembodiments, NV controller 2403 is provided to explicitly clear thecache when using a non-volatile memory, such as FM memory for data bank2405. NV controller 2403 may include an NV bit which indicates cachelines that should not be cleared but are expected to retain theircontents across power cycles. The functions of NV controller 2403 can becombined in cache controller 2402, or vice versa.

FIG. 25 illustrates apparatus 2500 comprising memory and correspondinglogic, wherein the memory comprises ferroelectric (FE) memory bit-cells,in accordance with some embodiments. Apparatus 2500 comprises M×N memoryarray 2501 of bit-cells, logic circuitry 2502 for address decoding,sense amplifier and write drivers 2503, and plate-line (PL) driver 2504.Logic circuitry 2502 comprises address decoders for selecting a row ofbit-cells and/or a particular bit-cell from M×N memory array 2501, whereM and N are integers of same or different values. Logic circuitry 2502comprises sense-amplifiers for reading the values from the selectedbit-cell, while write drivers are used to write a particular value to aselected bit-cell. Here, a schematic of FE bit-cell 2501 _(0,0) isillustrated. The same embodiments apply to other bit-cells of the M×Narray. In this example, a one-transistor one-capacitor (1T1C) bit cellis shown, but the embodiments are applicable to 1TnC bit-cell andmulti-element FE gain bit-cell as described herein.

In some embodiments, bit-cell 2501 _(0,0) comprises a word-line (WL), aplate-line (PL), a bit-line (BL), a complementary bit-line (BLB), andtwo half bit-cells 2501 _(0,0_A) and 2501 _(0,0_B). In some embodiments,bit-cell 2501 _(0,0) comprises an n-type transistor MN₁, and FEcapacitive structure Cfe₁. The gates of transistor MN₁ are coupled to acommon WL. In various embodiments, one terminal of the FE capacitivestructure Cfe₁ is coupled to a PL. The second terminal of the FEcapacitive structure is coupled to source or drain terminal of thetransistor MN₁. In various embodiments, BL is coupled to the source ordrain terminal of first transistor MN₁. In some embodiments, a BLcapacitor CBl₁ is coupled to the source or drain terminal of firsttransistor MN₁ and to a reference node (e.g., ground such that the FEcapacitor is not coupled to the same source or drain terminal. In someembodiments, the PL is parallel to the BL and orthogonal to the WL. Insome embodiments, the PL is parallel to the WL and orthogonal to the BL.

In some embodiments, the FE capacitor is a planar capacitor. In someembodiments, the FE capacitor is a pillar or non-planar capacitor. Insome embodiments, when the bit-cell is a 1TnC bit-cell, the FEcapacitors are configured in a tower structure allowing the x-yfoot-print to remain the same as for a 1T1C bit-cell but with tallerbit-cell in the z-direction. In some embodiments, when the bit-cell is amulti-element FE gain bit-cell, the bit-cell allows for decoupling ofthe storage node from BL, allows for reducing the thickness scalingrequirement for pillar capacitors, and allows for reducing polarizationdensity requirements. Further, by stacking the ‘n’ capacitors in thez-direction (forming a tower), the area increases in the x-y directiondue to the two transistors. The increase in area (due to the twotransistors per bit-cell) allows for expanding the sizes (or radius) ofthe capacitors in the x-y direction.

FIG. 26 illustrates a high-level architecture of an artificialintelligence (AI) machine 2600 comprising a compute die positioned ontop of a memory die, in accordance with some embodiments. AI machine2600 comprises computational block 2601 or processor having memory 2602such as random-access memory (RAM) 2602 and compute die 2603; firstrandom-access memory 2604 (e.g., static RAM (SRAM), ferroelectric orparaelectric RAM (FeRAM), ferroelectric or paraelectric staticrandom-access memory (FeSRAM)), main processor 2605, secondrandom-access memory 2606 (dynamic RAM (DRAM), FeRAM), and solid-statememory or drive (SSD) 2607. In some embodiments, some or all componentsof AI machine 2600 are packaged in a single package forming asystem-on-chip (SoC). The SoC can be configured as a logic-on-logicconfiguration, which can be in a 3D configuration or a 2.5Dconfiguration.

In some embodiments, computational block 2601 is packaged in a singlepackage and then coupled to main processor 2605 and memories 2604, 2606,and 2607 on a printed circuit board (PCB). In some embodiments,computational block 2601 is configured as a logic-on-logicconfiguration, which can be in a 3D configuration or a 2.5Dconfiguration. In some embodiments, computational block 2601 comprises aspecial purpose compute die 2603 or microprocessor. For example, computedie 2603 is a compute chiplet that performs a function of an acceleratoror inference. In some embodiments, RAM 2602 is DRAM which forms aspecial memory/cache for the special purpose compute die 2603. The DRAMcan be embedded DRAM (eDRAM) such as 1T-1C (one transistor and onecapacitor) based memories. In some embodiments, RAM 2602 isferroelectric or paraelectric RAM (Fe-RAM).

In some embodiments, compute die 2603 is specialized for applicationssuch as Artificial Intelligence, graph processing, and algorithms fordata processing. In some embodiments, compute die 2603 further has logiccomputational blocks, for example, for multipliers and buffers, aspecial data memory block (e.g., buffers) comprising DRAM, FeRAM, or acombination of them. In some embodiments, RAM 2602 has weights andinputs stored in-order to improve the computational efficiency. Theinterconnects between main processor 2605 (also referred to as specialpurpose processor), First RAM 2604 and compute die 2603 are optimizedfor high bandwidth and low latency. The architecture of FIG. 26 allowsefficient packaging to lower the energy, power, or cost and provides forultra-high bandwidth between RAM 2602 and compute die 2603 ofcomputational block 2601.

In some embodiments, RAM 2602 is partitioned to store input data (ordata to be processed) 2602A and weights 2602B. In some embodiments,input data 2602A is stored in a separate memory (e.g., a separate memorydie) and weights 2602B are stored in a separate memory (e.g., separatememory die).

In some embodiments, computational logic or compute die 2603 comprisesmatrix multiplier, adder, concatenation logic, buffers, andcombinational logic. In various embodiments, compute die 2603 performsmultiplication operation on input data 2602A and weight 2602B. In someembodiments, weights 2602B are fixed weights. For example, mainprocessor 2605 (e.g., a graphics processor unit (GPU), fieldprogrammable grid array (FPGA) processor, application specificintegrated circuit (ASIC) processor, digital signal processor (DSP), anAI processor, a central processing unit (CPU), or any otherhigh-performance processor) computes the weights for a training model.Once the weights are computed, they are stored in memory 2602. Invarious embodiments, the input data 2602A, that is to be analyzed usinga trained model, is processed by computational block 2601 with computedweights 2602B to generate an output (e.g., a classification result).

In some embodiments, First RAM 2604 is ferroelectric or paraelectricbased SRAM. For example, a six transistor (6T) SRAM bit-cells havingferroelectric or paraelectric transistors are used to implement anon-volatile FeSRAM. In some embodiments, SSD 2607 comprises NAND flashcells. In some embodiments, SSD 2607 comprises NOR flash cells. In someembodiments, SSD 2607 comprises multi-threshold NAND flash cells.

In various embodiments, the non-volatility of FeRAM is used to introducenew features such as security, functional safety, and faster reboot timeof AI machine 2600. The non-volatile FeRAM is a low power RAM thatprovides fast access to data and weights. First RAM 2604 can also serveas a fast storage for inference die (or accelerator), which typicallyhas low capacity and fast access requirements.

In various embodiments, the FeRAM (FeDRAM or FeSRAM) includesferroelectric or paraelectric material. The ferroelectric orparaelectric (FE) material may be in a transistor gate stack or in acapacitor of the memory. The ferroelectric material can be any suitablelow voltage FE material that allows the FE material to switch its stateby a low voltage (e.g., 2600 mV). Threshold in the FE material has ahighly non-linear transfer function in the polarization vs. voltageresponse. The threshold is related a) non-linearity of switchingtransfer function, and b) to the squareness of the FE switching. Thenon-linearity of switching transfer function is the width of thederivative of the polarization vs. voltage plot. The squareness isdefined by the ratio of the remnant polarization to the saturationpolarization; perfect squareness will show a value of 1.

The squareness of the FE switching can be suitably manipulated withchemical substitution. For example, in PbTiO3 a P-E(polarization-electric field) square loop can be modified by La or Nbsubstitution to create an S-shaped loop. The shape can be systematicallytuned to ultimately yield a non-linear dielectric. The squareness of theFE switching can also be changed by the granularity of a FE layer. Aperfectly epitaxial, single crystalline FE layer will show highersquareness (e.g., ratio is closer to 1) compared to a poly crystallineFE. This perfect epitaxial can be accomplished using lattice matchedbottom and top electrodes. In one example, BiFeO (BFO) can beepitaxially synthesized using a lattice matched SrRuO₃ bottom electrodeyielding P-E loops that are square. Progressive doping with La willreduce the squareness.

In some embodiments, the FE material comprises a perovskite of the typeABO₃, where ‘A’ and ‘B’ are two cations of different sizes, and ‘O’ isoxygen which is an anion that bonds to both the cations. Generally, thesize of atoms of A is larger than the size of B atoms. In someembodiments, the perovskite can be doped (e.g., by La or Lanthanides).In various embodiments, when the FE material is a perovskite, theconductive oxides are of the type AA′BB′O₃. A′ is a dopant for atomicsite A, it can be an element from the Lanthanides series. B′ is a dopantfor atomic site B, it can be an element from the transition metalelements especially Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn. A′ may havethe same valency of site A, with a different ferroelectricpolarizability.

In some embodiments, the FE material comprises hexagonal ferroelectricsof the type h-RMnO3, where R is a rare earth element viz. cerium (Ce),dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium(Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr),promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium(Tm), ytterbium (Yb), and yttrium (Y). The ferroelectric phase ischaracterized by a buckling of the layered MnO5 polyhedra, accompaniedby displacements of the Y ions, which lead to a net electricpolarization. In some embodiments, hexagonal FE includes one of: YMnO3or LuFeO3. In various embodiments, when the FE material compriseshexagonal ferroelectrics, the conductive oxides are of A2O3 (e.g.,In2O3, Fe2O3) and ABO3 type, where ‘A’ is a rare earth element and B isMn.

In some embodiments, the FE material is perovskite, which includes oneor more of: La, Sr, Co, Sr, Ru, Y, Ba, Cu, Bi, Ca, and Ni. For example,metallic perovskites such as: (La,Sr)CoO₃, SrRuO₃, (La,Sr)MnO₃,YBa₂Cu₃O₇, Bi₂Sr₂CaCu₂O₈, LaNiO₃, etc. may be used for FE material.Perovskites can be suitably doped to achieve a spontaneous distortion ina range of 0.3 to 2%. For chemically substituted BiFeO₃, BrCrO₃, BuCoO₃class of materials, La or rate earth substitution into the Bi site cantune the spontaneous distortion. In some embodiments, the FE material iscontacted with a conductive metal oxide that includes one of theconducting perovskite metallic oxides exemplified by: La—Sr—CoO3,SrRuO3, La—Sr—MnO3, YBa2Cu3O7, Bi2Sr2CaCu2O8, and LaNiO3.

In some embodiments, the FE material comprises a stack of layersincluding low voltage FE material between (or sandwiched between)conductive oxides. In various embodiments, when the FE material is aperovskite, the conductive oxides are of the type AA′BB′ O₃. A′ is adopant for atomic site A, it can be an element from the Lanthanidesseries. B′ is a dopant for atomic site B, it can be an element from thetransition metal elements especially Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu,Zn. A′ may have the same valency of site A, with a differentferroelectric polarizability. In various embodiments, when metallicperovskite is used for the FE material, the conductive oxides caninclude one or more of: IrO₂, RuO₂, PdO₂, OsO₂, or ReO₃. In someembodiments, the perovskite is doped with La or Lanthanides. In someembodiments, thin layer (e.g., approximately 10 nm) perovskite templateconductors such as SrRuO3 coated on top of IrO2, RuO2, PdO2, PtO2, whichhave a non-perovskite structure but higher conductivity to provide aseed or template for the growth of pure perovskite ferroelectric at lowtemperatures, are used as the conductive oxides.

In some embodiments, ferroelectric materials are doped with s-orbitalmaterial (e.g., materials for first period, second period, and ionicthird and fourth periods). In some embodiments, f-orbital materials(e.g., lanthanides) are doped to the ferroelectric material to makeparaelectric material. Examples of room temperature paraelectricmaterials include: SrTiO3, Ba(x)Sr(y)TiO3 (where x is −0.05, and y is0.95), HfZrO2, Hf—Si—O.

In some embodiments, the FE material comprises one or more of: Hafnium(Hf), Zirconium (Zr), Aluminum (Al), Silicon (Si), their oxides or theiralloyed oxides. In some embodiments, the FE material includes one ormore of: Al(1-x)Sc(x)N, Ga(1-x)Sc(x)N, Al(1-x)Y(x)N orAl(1-x-y)Mg(x)Nb(y)N, y doped HfO2, where x includes one of: Al, Ca, Ce,Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y, wherein ‘x’ is a fraction. Insome embodiments, the FE material includes one or more of: Bismuthferrite (BFO), or BFO with doping material.

In some embodiments, the FE material includes Bismuth ferrite (BFO), BFOwith a doping material where in the doping material is one of Lanthanum,or any element from the lanthanide series of the periodic table. In someembodiments, the FE material includes a relaxor ferro-electric includesone of Barium Titanium-Bismuth Zinc Niobium Tantalum (BT-BZNT) or BariumTitanium-Barium Strontium Titanium (BT-BST).

In some embodiments, the FE material includes Hafnium oxides of theform, Hf1-x Ex O_(y) where E can be Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc,Si, Sr, Sn, or Y. In some embodiments, the FE material includes Niobatetype compounds LiNbO3, LiTaO3, Lithium iron Tantalum Oxy Fluoride,Barium Strontium Niobate, Sodium Barium Niobate, or Potassium strontiumniobate.

In some embodiments, the FE material comprises multiple layers. Forexample, alternating layers of [Bi2O2]2+, and pseudo-perovskite blocks(Bi4Ti3O12 and related Aurivillius phases), with perovskite layers thatare n octahedral layers in thickness can be used. In some embodiments,the FE material comprises organic material. For example, Polyvinylidenefluoride or polyvinylidene difluoride (PVDF).

In some embodiments, the FE material comprises hexagonal ferroelectricsof the type h-RMnO3, where R is a rare earth element viz. cerium (Ce),dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium(Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr),promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium(Tm), ytterbium (Yb), and yttrium (Y). The ferroelectric phase ischaracterized by a buckling of the layered MnO5 polyhedra, accompaniedby displacements of the Y ions, which lead to a net electricpolarization. In some embodiments, hexagonal FE includes one of: YMnO3or LuFeO3. In various embodiments, when the FE material compriseshexagonal ferroelectrics, the conductive oxides are of A2O3 (e.g.,In2O3, Fe2O3) and ABO3 type, where ‘A’ is a rare earth element and B isMn.

In some embodiments, the FE material comprises improper FE material. Animproper ferroelectric is a ferroelectric where the primary orderparameter is an order mechanism such as strain or buckling of the atomicorder. Examples of improper FE material are LuFeO3 class of materials orsuper lattice of ferroelectric and paraelectric materials SnTiO3 (STO),respectively, and LaAlO3 (LAO) and STO, respectively. For example, asuper lattice of [PTO/STO]n or [LAO/STO]n, where ‘n’ is between 1 to2600. While various embodiments here are described with reference toferroelectric material for storing the charge state, the embodiments arealso applicable for paraelectric material. In some embodiments,paraelectric material includes one of: SrTiO3, Ba(x)Sr(y)TiO3 (where xis −0.5, and y is 0.95), HfZrO2, Hf—Si—O.

The method of forming the structures described herein are applicable tovarious logic embodiments. For example, the FeRAM devices or capacitivestructures formed herein can be used to forming otherferroelectric/paraelectric circuits. These circuits can be implementedmajority gate, minority gate and/or threshold gate.

Following examples are provided that illustrate the various embodiments.The examples can be combined with other examples. As such, variousembodiments can be combined with other embodiments without changing thescope of the invention.

FIG. 27 illustrates 3-input majority gate 2700 using non-linear inputcapacitors, in accordance with some embodiments. In some embodiments,3-input majority gate 2700 comprises non-linear input capacitors C1n1,C2n1, and C3n1 that receives digital signals a, b, and c, respectively.Here, signal names and node names are interchangeably used. For example,‘a’ refers to node ‘a’ or signal ‘a’ depending on the context of thesentence. One end or terminal of capacitor C1n1 is coupled to node awhile the other end of capacitor C1n1 is coupled to summing node Vs. Thesame is true for other non-linear capacitors C2n1 and C3n1 as shown. Insome embodiments, 3-input majority gate 2700 comprises a drivercircuitry 2701. In this example, driver circuitry 2701 is an inverter.In other embodiments, other types of driver circuitries can be used suchas NAND gate, NOR gate, multiplexer, buffer, and other logic gates. Themajority function is performed at summing node Vs as Majority(a,b,c). Inthis example, since driver circuitry 2701 is an inverter, minorityfunction is performed at output “out” as Minority(a,b,c).

In some embodiments, in addition to the gate capacitance of drivercircuitry 2701, an additional linear capacitor CL is coupled to summingnode Vs and ground as shown. In some embodiments, this linear capacitorCL is a non-ferroelectric capacitor. In some embodiments, thenon-ferroelectric capacitor includes one of: dielectric capacitor,para-electric capacitor, or non-linear dielectric capacitor. Adielectric capacitor comprises first and second metal plates with adielectric between them. Examples of such dielectrics are: HfOX, ABO3perovskites, nitrides, oxy-fluorides, oxides, etc. A para-electriccapacitor comprises first and second metal plates with a para-electricmaterial between them. In some embodiments, f-orbital materials (e.g.,lanthanides) are doped to the ferroelectric materials to makeparaelectric material. Examples of room temperature paraelectricmaterial include: SrTiO3, Ba(x)Sr(y)TiO3 (where x is −0.5, and y is0.95)), HfZrO2, Hf—Si—O, La-substituted PbTiO3, PMN-PT based relaxorferroelectrics. A dielectric capacitor comprises first and second metalplates with non-linear dielectric capacitor between them. The range fordielectric constant is 1.2 to 10000. The capacitor CL can be implementedas MIM (metal-insulator-metal) capacitor technology, transistor gatecapacitor, hybrid of metal capacitors or transistor capacitor. Thecapacitor CL can be implemented as MIM (metal-insulator-metal) capacitortechnology, transistor gate capacitor, or hybrid of metal capacitors ortransistor capacitor.

In some embodiments, the non-linear input capacitors C1n1, C2n1, andC3n1 comprise non-linear polar material. In some embodiments, thenon-linear polar material includes one of: ferroelectric (FE) material,para-electric material, relaxor ferroelectric, or non-linear dielectric.In various embodiments, para-electric material is the same as FEmaterial but with chemical doping of the active ferroelectric ion by anion with no polar distortion. In some cases, the non-polar ions arenon-s orbital ions formed with p, d, f external orbitals. In someembodiments, non-linear dielectric materials are same as para-electricmaterials, relaxors, and dipolar glasses.

In some embodiments, f-orbital materials (e.g., lanthanides) are dopedto the ferroelectric material to make paraelectric material. Examples ofroom temperature paraelectric material include: SrTiO3, Ba(x)Sr(y)TiO3(where x is −0.5, and y is 0.95), HfZrO2, Hf—Si—O.

In various embodiments, the FE material can be any suitable low voltageFE material that allows the FE material to switch its state by a lowvoltage (e.g., 100 mV). In some embodiments, the FE material comprises aperovskite of the type ABO₃, where ‘A’ and ‘B’ are two cations ofdifferent sizes, and ‘O’ is oxygen which is an anion that bonds to boththe cations. Generally, the size of A atoms is larger than the size of Batoms. In some embodiments, the perovskite can be doped (e.g., by La orLanthanides). Perovskites can be suitably doped to achieve a spontaneousdistortion in a range of 0.3 to 2%. For example, for chemicallysubstituted lead titanate such as Zr in Ti site; La, Nb in Ti site, theconcentration of these substitutes is such that it achieves thespontaneous distortion in the range of 0.3 to 2%. For chemicallysubstituted BiFeO₃, BiCrO3, BiCoO3 class of materials, La or rare earthsubstitution into the Bi site can tune the spontaneous distortion. Insome embodiments, perovskite includes one of: BaTiO₃, KNbO3, or NaTaO3.

Threshold in the FE material has a highly non-linear transfer functionin the polarization vs. voltage response. The threshold is related to:a) non-linearity of switching transfer function; and b) the squarenessof the FE switching. The non-linearity of switching transfer function isthe width of the derivative of the polarization vs. voltage plot. Thesquareness is defined by the ratio of the remnant polarization to thesaturation polarization; perfect squareness will show a value of 1.

The squareness of the FE switching can be suitably manipulated withchemical substitution. For example, in PbTiO3 a P-E(polarization-electric field) square loop can be modified by La or Nbsubstitution to create an S-shaped loop. The shape can be systematicallytuned to ultimately yield a non-linear dielectric. The squareness of theFE switching can also be changed by the granularity of the FE layer. Aperfect epitaxial, single crystalline FE layer will show highersquareness (e.g., ratio is closer to 1) compared to a poly crystallineFE. This perfect epitaxial can be accomplished using lattice matchedbottom and top electrodes. In one example, BiFeO (BFO) can beepitaxially synthesized using a lattice matched SrRuO₃ bottom electrodeyielding P-E loops that are square. Progressive doping with La willreduce the squareness.

In some embodiments, the FE material is contacted with a conductivemetal oxide that includes one of the conducting perovskite metallicoxides exemplified by: La—Sr—CoO₃, SrRuO₃, La—Sr—MnO₃, YBa₂Cu₃O₇,Bi2Sr2CaCu2O27, LaNiO₃, and ReO3.

In some embodiments, the FE material comprises a stack of layersincluding low voltage FE material between (or sandwiched between)conductive oxides. In various embodiments, when FE material is aperovskite, the conductive oxides are of the type AA′BB′ O₃. A′ is adopant for atomic site A, it can be an element from the Lanthanidesseries. B′ is a dopant for atomic site B, it can be an element from thetransition metal elements especially Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu,Zn. A′ may have the same valency of site A, with a differentferroelectric polarizability.

In some embodiments, the FE material comprises hexagonal ferroelectricsof the type h-RMnO3, where R is a rare earth element such as: cerium(Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd),holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd),praseodymium (Pr), promethium (Pm), samarium (Sm), scandium (Sc),terbium (Tb), thulium (Tm), ytterbium (Yb), and yttrium (Y). Theferroelectric phase is characterized by a buckling of the layered MnO5polyhedra, accompanied by displacements of the Y ions, which lead to anet electric polarization. In some embodiments, hexagonal FE includesone of: YMnO3 or LuFeO3. In various embodiments, when the FE materialcomprises hexagonal ferroelectrics, the conductive oxides adjacent tothe FE material are of A2O3 (e.g., In2O3, Fe2O3) and AB2O3 type, where‘A’ is a rare earth element and B is Mn.

In some embodiments, FE material comprises improper FE material. Animproper ferroelectric is a ferroelectric where the primary orderparameter is an order mechanism such as strain or buckling of the atomicorder. Examples of improper FE material are LuFeO3 class of materials orsuper lattice of ferroelectric and paraelectric materials. While variousembodiments here are described with reference to ferroelectric materialfor storing the charge state, the embodiments are also applicable forparaelectric material. For example, the capacitor of various embodimentscan be formed using paraelectric material instead of ferroelectricmaterial.

In some embodiments, the FE material includes one of: Hafnium (Hf),Zirconium (Zr), Aluminum (Al), Silicon (Si), their oxides or theiralloyed oxides. In some embodiments, FE material includes one of:Al(1-x)Sc(x)N, Ga(1-x)Sc(x)N, Al(1-x)Y(x)N or Al(1-x-y)Mg(x)Nb(y)N, ydoped HfO2, where x includes one of: Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc,Si, Sr, Sn, or Y, wherein ‘x’ is a fraction. In some embodiments, the FEmaterial includes Bismuth ferrite (BFO) or BFO with doping material.

In some embodiments, the FE material includes Bismuth ferrite (BFO), BFOwith a doping material where in the doping material is one of Lanthanum,or any element from the lanthanide series of the periodic table. In someembodiments, the FE material includes a relaxor ferroelectric includingone of Barium Titanium-Bismuth Zinc Niobium Tantalum (BT-BZNT), orBarium Titanium-Barium Strontium Titanium (BT-BST).

In some embodiments, the FE material includes Hafnium oxides of theform, Hf1-x Ex Oy where E can be Al, Ca, Ce, Dy, er, Gd, Ge, La, Sc, Si,Sr, Sn, or Y. In some embodiments, FE material includes Niobate typecompounds LiNbO3, LiTaO3, Lithium iron Tantalum Oxy Fluoride, BariumStrontium Niobate, Sodium Barium Niobate, or Potassium strontiumniobate.

In some embodiments, the FE material comprises multiple layers. Forexample, alternating layers of [Bi2O2]2+, and pseudo-perovskite blocks(Bi4Ti3O12 and related Aurivillius phases), with perovskite layers thatare n octahedral layers in thickness can be used.

In some embodiments, the FE material comprises organic material. Forexample, Polyvinylidene fluoride or polyvinylidene difluoride (PVDF).The FE material is between two electrodes. These electrodes areconducting electrodes. In some embodiments, the electrodes areperovskite templated conductors. In such a templated structure, a thinlayer (e.g., approximately 10 nm) of a perovskite conductor (such asSrRuO₃) is coated on top of IrO₂, RuO₂, PdO₂, or PtO2 (which have anon-perovskite structure but higher conductivity) to provide a seed ortemplate for the growth of pure perovskite ferroelectric at lowtemperatures. In some embodiments, when the ferroelectric compriseshexagonal ferroelectric material, the electrodes can have hexagonalmetals, spinels, or cubic metals. Examples of hexagonal metals include:PtCoO2, PdCoO2, and other delafossite structured hexagonal metallicoxides such as Al-doped ZnO. Examples of spinels include Fe3O4 andLiV2O4. Examples of cubic metals include Indium Tin Oxide (ITO) such asSn-doped In2O3.

The charge developed on node Vs produces a voltage and current that isthe output of the majority gate 2700. Any suitable driver circuitry 2701can drive this output. For example, a non-FE logic, FE logic, CMOSlogic, BJT logic, etc. can be used to drive the output to a downstreamlogic. Examples of the drivers include inverters, buffers, NAND gates,NOR gates, XOR gates, amplifiers, comparators, digital-to-analogconverters, analog-to-digital converters, multiplexers, etc.

The majority function is performed at the summing node Vs, and theresulting voltage is projected on to capacitance of driver circuitry2701. For example, the majority function of the currents (I_(a), I_(b),and I_(c)) on node Vs results in a resultant current that chargescapacitor. Table 1 illustrates the majority function f(Majority a, b,c).

TABLE 1 Vs a b c (f(Majority a, b, c)) 0 0 0 0 0 0 1 0 0 1 0 0 0 1 1 1 10 0 0 1 0 1 1 1 1 0 1 1 1 1 1

The charge developed on node Vs produces a voltage and current that isthe output of the majority gate 2700. Any suitable driver circuitry 2701can drive this output. For example, a non-FE logic, FE logic, CMOSlogic, BJT logic, etc. can be used to drive the output to a downstreamlogic. Examples of the drivers include inverters, buffers, NAND gates,NOR gates, XOR gates, amplifiers, comparators, digital-to-analogconverters, analog-to-digital converters, multiplexers, etc.

While FIG. 27 illustrates a 3-input majority gate, the same concept canbe extended to more than 3 inputs to make an N-input majority gate,where N is greater than 2. In various embodiments, ‘N’ is an odd number.For example, a 5-input majority gate is like an input majority gate 2700but for additional inputs ‘d’ and ‘e’. These inputs can come from thesame drivers or from different drivers.

In some embodiments, the 3-input majority gate can be configured as afast inverter with a much faster propagation delay compared to a similarsized (in terms of area footprint) CMOS inverter. This is particularlyuseful when the inputs have a significantly slower slope compared to thepropagation delay through the non-linear input capacitors. One way toconfigurate the 3-input majority gate as an inverter is to set one inputto a logic high (e.g., b=1) and set another input to a logic low (e.g.,b=0). The third input is the driving input which is to be inverted. Theinversion will be at the Vs node. The same technique can also be appliedto N-input majority gate, where ‘N’ is 1 or any other odd number. In anN-input majority gate, (N−1)/2 inputs are set to ‘1’ and (N−1)/2 inputsare set to ‘O’, and one input is used to decide the inversion function.It will be appreciated that the various embodiments are described as amajority gate, the same concepts are applicable to a minority gate. In aminority gate the driving circuitry is an inverting circuitry coupled tothe summing node Vs. The minority function is seen at the output of theinverting circuitry.

In some embodiments, (2N−1) input majority gate can operate as anN-input AND gate where (N−1) inputs of the majority gate are set tozero. The AND function will be seen at the summing node Vs Similarly,N-input NAND, OR, NOR gates can be realized. In various embodiments, thesumming node Vs is driven by a driver circuitry (e.g., inverter, buffer,NAND gate, AND gate, OR gate, NOR gate, or any other logic circuitry).However, driver circuitry 2701 can be replaced with another majority orminority gate. In one such embodiment, the storage node Vs is directlycoupled to a non-linear capacitor of another majority or minority gate.

Any logic function f(x₁, x₂, . . . x_(n)) can be represented by twolevels of logic as given by the min-term expansion:

f(x₁, x₂, . . . x_(n))=V_(C) ₁ _(,C) ₂ _(, . . . C) _(n) f(x₁, x₂, . . .x_(n))∧X₁ ^(C1) ∧X₂ ^(C2) ∧X₃ ^(C3) . . . ∧X_(n) ^(Cn) where C_(i) iseither 0 or 1. When C_(i) is 1, x_(i) ^(Ci)=x_(i)(the input is used inits original form). When C_(i) is 0, x_(i) ^(ci)=x_(i) (the input isused in its inverted form). The first level of logic is represented byat most 2^(n) AND gates (Δ), one for each of the 2^(n) possiblecombinations of 0 and 1 for C₁, C₂, . . . . C_(n). The second level oflogic is represented by a single OR gate (V). Each operand of the ORgate is a representation of a row in the truth table for f(x₁, x₂, . . .x_(n)).

A (2N−1)-input majority gate can represent an N-input AND gate, by tying(N−1) of the majority gate's inputs to a ground level. Similarly, a(2N−1)-input majority gate can represent an N-input OR gate, by tying(N−1) of the majority gate's inputs to a supply level (Vdd). Since amajority gate can represent AND and OR gates, and the inputs to the ANDand OR gates are either original or inverted forms of the input digitalsignals, any logic function can be represented by majority gates andinverters only, in accordance with some embodiments.

FIG. 28 illustrates complex logic gate 2800 implemented using a 5-inputmajority gate, in accordance with some embodiments. In some embodiments,an AOI (and-or-invert) logic comprises a 5-input majority gate. The5-input majority gate includes non-linear capacitors C1n1, C2n1, C3n1,C4n1, and C5n1 and driving circuitry 2801 coupled as shown. In variousembodiments, two of the non-linear capacitors receives the same input.Here, capacitors C3n1 and C4n1 receive input ‘c’. In variousembodiments, C5n1 is coupled to Vdd to produce an OR function at nodeVs, where the OR function is OR(AND(a,b),c). In some embodiments, otherlogic gates can be realized by changing Vdd to ground for capacitorC5n1, and/or changing other inputs.

Following examples are provided that illustrate the various embodiments.The examples can be combined with other examples. As such, variousembodiments can be combined with other embodiments without changing thescope of the invention.

Example 1: A device comprising: a first region comprising: a firstconductive interconnect within a first dielectric in a first level; asecond level above the first level, the second level comprising: anelectrode structure on the first conductive interconnect, the electrodestructure comprising: a first conductive hydrogen barrier layer; and afirst conductive fill material on the first conductive hydrogen barrierlayer, wherein the electrode structure comprises a first lateralthickness; an etch stop layer comprising an insulator, the etch stoplayer laterally surrounding the electrode structure; a memory devicecomprising a ferroelectric material or a paraelectric material on leasta portion of the electrode structure, the memory device furthercomprising a second lateral thickness, wherein the second lateralthickness is less than the first lateral thickness; a second dielectricspanning the first region and on the etch stop layer, the seconddielectric comprising an amorphous, greater than 90% film densityhydrogen barrier material, wherein the memory device is directlyadjacent to and embedded within the second dielectric; and a viaelectrode on at least a portion of the memory device, the via electrodecomprising: a second conductive hydrogen barrier layer comprising alateral portion in contact with the memory device; substantiallyvertical portions directly adjacent to the second dielectric; and asecond conductive fill material adjacent to the second conductivehydrogen barrier layer; and a second region adjacent to the firstregion, the second region comprising: a second conductive interconnectwithin the first level; the second level further comprising: a thirdconductive interconnect; a via structure coupled between the secondconductive interconnect and the third conductive interconnect; and athird dielectric on the etch stop layer, the third dielectric directlyadjacent to the second dielectric, wherein the third dielectriccomprises a less than 90% film density material, wherein the thirddielectric laterally surrounds a portion of the via structure.

Example 2: The device of example 1, wherein the second dielectriccomprises Al_(x)O_(y), HfO_(x), AlSiO_(x), ZrO_(x),TiO_(x), AlSiO_(x),HfSiO_(x), TaSiO_(x), AN, ZrN, or HfN.

Example 3: The device of example 1, wherein the third dielectriccomprises SiO₂, SiOC, SiC or SiO₂ doped with F.

Example 4: The device of example 1, wherein the etch stop layercomprises silicon and one or more of nitrogen and carbon and the seconddielectric does not comprise silicon nitride.

Example 5: The device of example 1, wherein the first conductivehydrogen barrier layer and the second conductive hydrogen barrier layercomprise TiAlN, with greater than 30 atomic percent AN, TaN with greaterthan 30 atomic percent N₂, TiSiN with greater than 20 atomic percentSiN, TaC, TiC, WC, WN, carbonitrides of Ta, Ti or W, TiO, Ti₂O, WO₃,SnO₂, ITO, IGZO, ZO or METGLAS series of alloys.

Example 6: The device of example 1, wherein the first conductivehydrogen barrier layer and the second conductive hydrogen barrier layercomprise different materials.

Example 7: The device of example 1, wherein the first conductivehydrogen barrier layer and the second conductive hydrogen barrier layercomprise a thickness of least 1 nm.

Example 8: The device of example 1, wherein the first conductivehydrogen barrier layer laterally surrounds the first conductive fillmaterial, and wherein the memory device is not in contact with the firstconductive hydrogen barrier layer.

Example 9: The device of example 1, wherein the first conductivehydrogen barrier layer laterally surrounds the first conductive fillmaterial, and wherein a portion of the first conductive hydrogen barrierlayer and a portion of the first conductive fill material are in contactwith a lower most surface of the memory device.

Example 10: The device of example 1, wherein the electrode structurefurther comprises a first liner layer directly between the firstconductive hydrogen barrier layer and the first conductive fill materialand wherein the first liner layer comprises a material that is differentfrom a material of the first conductive hydrogen barrier layer.

Example 11: The device of example 1, wherein the via electrode furthercomprises a second liner layer between the second conductive hydrogenbarrier layer and the second conductive fill material, and wherein thesecond liner layer comprises a material that is different from amaterial of the second conductive hydrogen barrier layer.

Example 12: The device of example 1, wherein the etch stop layercomprises a first vertical thickness that is equal to a second verticalthickness of the electrode structure.

Example 13: The device of example 1, wherein the third conductiveinterconnect has a lower most surface that is below an uppermost surfaceof the memory device.

Example 14: The device of example 1, wherein the second conductivehydrogen barrier layer extends on an entire uppermost surface of thememory device.

Example 15: The device of example 1, wherein the second conductivehydrogen barrier layer further extends below the uppermost surface andon to a portion of a sidewall of a top electrode of the memory device.

Example 16: The device of example 1, wherein the memory device comprisesa curved uppermost surface, and wherein the second conductive hydrogenbarrier layer extends over an entire curved uppermost surface.

Example 17: The device of example 1, wherein the via electrode is notsymmetric about the memory device.

Example 18: The device of example 1, wherein the first conductiveinterconnect has a third lateral thickness that is smaller than thefirst lateral thickness.

Example 19: The device of example 18, wherein first conductive hydrogenbarrier layer extends over an uppermost surface of the first conductiveinterconnect and below the uppermost surface on a top portion of asidewall of the first conductive interconnect.

Example 20: The device of example 1, wherein the third conductiveinterconnect has a lower most surface that is above an uppermost surfaceof the memory device.

Example 21: The device of example 1, wherein the third conductiveinterconnect has a lower most surface that is below an uppermost surfaceof the memory device.

Example 22: The device of example 1, wherein the via structure comprisesan upper portion and a lower portion, wherein the lower portion isadjacent to the etch stop layer and the upper portion is adjacent to thethird dielectric.

Example 23: The device of example 1, wherein the ferroelectric materialcomprises one of: bismuth ferrite (BFO), BFO with a doping materialwhere in the doping material is one of lanthanum, or elements fromlanthanide series of periodic table; lead zirconium titanate (PZT), orPZT with a doping material, wherein the doping material is one of La,Nb; a relaxor ferroelectric material which includes one of leadmagnesium niobate (PMN), lead magnesium niobate-lead titanate (PMN-PT),lead lanthanum zirconate titanate (PLZT), lead scandium niobate (PSN),barium titanium-bismuth zinc niobium tantalum (BT-BZNT), or Bariumtitanium-barium strontium titanium (BT-BST); a perovskite material whichincludes one of: BaTiO3, PbTiO3, KNbO3, or NaTaO3; hexagonalferroelectric which includes one of: YMnO3, or LuFeO3; hexagonalferroelectrics of a type h-RMnO3, where R is a rare earth element whichincludes one of: cerium (Ce), dysprosium (Dy), erbium (Er), europium(Eu), gadolinium (Gd), holmium (Ho), lanthanum (La), lutetium (Lu),neodymium (Nd), praseodymium (Pr), promethium (Pm), samarium (Sm),scandium (Sc), terbium (Tb), thulium (Tm), ytterbium (Yb), or yttrium(Y); Hafnium (Hf), Zirconium (Zr), Aluminum (Al), Silicon (Si), theiroxides or their alloyed oxides; Hafnium oxides as Hf1-x Ex Oy, where Ecan be Al, Ca, Ce, Dy, er, Gd, Ge, La, Sc, Si, Sr, Sn, Zr, or Y;Al(1-x)Sc(x)N, Ga(1-x)Sc(x)N, Al(1-x)Y(x)N or Al(1-x-y)Mg(x)Nb(y)N, ydoped HfO2, where x includes one of: Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc,Si, Sr, Sn, or Y, wherein ‘x’ is a fraction; or niobate type compoundsLiNbO3, LiTaO3, lithium iron tantalum oxy fluoride, barium strontiumniobate, sodium barium niobate, or potassium strontium niobate; or animproper ferroelectric material which includes one of: [PTO/STO]n or[LAO/STO]n, where ‘n’ is between 1 to 100.

Example 24: The device of example 1, wherein the paraelectric materialcomprises SrTiO3, Ba(x)Sr(y)TiO3 (where x is −0.05, and y is 0.95),HfZrO2, Hf—Si—O, La-substituted PbTiO3, or a PMN-PT based relaxorferroelectrics.

Example 25: The device of example 1, wherein the first conductivematerial comprises an uppermost surface that is concaved, and whereinthe memory device comprises a lower most surface that is substantiallymatched with the uppermost surface of the first conductive material.

Example 26: The device of example 1, wherein a portion of the firstconductive material not covered by the memory device is recessed belowan uppermost surface of the first conductive material and wherein thesecond dielectric extends below a lowermost surface of the memorydevice.

Example 27: The device of example 1, wherein the first conductivematerial comprises a first surface in contact with the memory device,and a second surface not covered by the memory device, wherein thesecond surface is tapered to decrease in thickness away from the memorydevice.

Example 28: A device comprising: a first region comprising: a firstconductive interconnect within a first dielectric in a first level; asecond level above the first level, the second level comprising: anelectrode structure on the first conductive interconnect, the electrodestructure comprising: a first conductive hydrogen barrier layer; and afirst conductive fill material on the first conductive hydrogen barrierlayer, wherein the electrode structure comprises a first lateralthickness; an etch stop layer comprising an insulator, the etch stoplayer laterally surrounding the electrode structure; a memory devicecomprising a ferroelectric material or a paraelectric material on leasta portion of the electrode structure, the memory device furthercomprising a second lateral thickness, wherein the second lateralthickness is greater than the first lateral thickness; a seconddielectric spanning the first region and on the etch stop layer, thesecond dielectric comprising an amorphous, greater than 90% film densityhydrogen barrier material, wherein the memory device is directlyadjacent to and embedded within the second dielectric; and a viaelectrode on at least a portion of the memory device, the via electrodecomprising: a second conductive hydrogen barrier layer comprising alateral portion in contact with the memory device; substantiallyvertical portions directly adjacent to the second dielectric; and asecond conductive fill material adjacent to the second conductivehydrogen barrier layer; and a second region adjacent to the firstregion, the second region comprising: a second conductive interconnectwithin the first level; the second level further comprising: a thirdconductive interconnect; a via structure coupled between the secondconductive interconnect and the third conductive interconnect; and athird dielectric on the etch stop layer, the third dielectric directlyadjacent to the second dielectric, wherein the third dielectriccomprises a less than 90% film density material, wherein the thirddielectric laterally surrounds a portion of the via structure.

Example 29: The device of example 27, wherein the first conductivehydrogen barrier layer and the second conductive hydrogen barrier layercomprise TiAlN, with >30 atomic percent AN, TaN with >30 atomic percentN₂, TiSiN with >20 atomic percent SiN, TaC, TiC, W_(C), WN,carbonitrides of Ta, Ti or W, TiO, Ti₂O, WO₃, SnO₂, ITO, IGZO, ZO orMETGLAS series of alloys.

Example 30: The device of example 27, wherein the memory device is incontact with the first conductive hydrogen barrier layer and the firstconductive fill material, and wherein the memory device covers theelectrode structure.

Example 31: The device of example 27, wherein the via electrode furthercomprises a liner layer between the second conductive hydrogen barrierlayer and the second conductive fill material, wherein the liner layercomprises a material that is different from a material of the secondconductive hydrogen barrier layer.

Example 32: The device of example 27, wherein the memory device is incontact with the first conductive hydrogen barrier layer and the firstconductive material, and wherein the memory device covers the electrodestructure.

Example 33: The device of example 27, wherein the first conductivehydrogen barrier layer laterally surrounds the first conductivematerial, and wherein a portion of the first conductive hydrogen barrierlayer and a portion of the first conductive material are in contact witha lower most surface of the memory device.

Example 34: The device of example 27, wherein the first conductivematerial comprises an uppermost surface that is concaved, and whereinthe memory device comprises a lower most surface that is substantiallymatched with the uppermost surface of the first conductive material.

Example 35: The device of example 27, wherein the memory device furtherextends on to an uppermost surface of the etch stop layer, and wherein aportion of the etch stop layer not covered by the memory device isrecessed below an uppermost surface of the etch stop layer and whereinthe second dielectric extends below a lowermost surface of the memorydevice.

Example 36: The device of example 27, wherein the etch stop layercomprises a first surface in contact with the memory device, and asecond surface not covered by the memory device, wherein the secondsurface is tapered to decrease in thickness away from the memory device.

Example 37: The device of example 27, wherein the second dielectriccomprises Al_(x)O_(y), HfO_(x), AlSiO_(x), ZrO_(x),TiO_(x), AlSiO_(x),HfSiO_(x), TaSiO_(x), AN, ZrN, or HfN and wherein the third dielectriccomprises SiO₂, SiOC, SiC or SiO₂ doped with F.

Example 38: A system comprising: a processor; a communication interfacecommunicatively coupled to the processor; and a memory coupled to theprocessor, wherein the memory comprises: bit-cells, wherein one of thebit-cells includes: a first region comprising: a first conductiveinterconnect within a first dielectric in a first level; a second levelabove the first level, the second level comprising: an electrodestructure on the first conductive interconnect, the electrode structurecomprising: a first conductive hydrogen barrier layer; and a firstconductive fill material on the first conductive hydrogen barrier layer,wherein the electrode structure comprises a first lateral thickness; anetch stop layer comprising an insulator, the etch stop layer laterallysurrounding the electrode structure; a memory device comprising aferroelectric material or a paraelectric material on least a portion ofthe electrode structure, the memory device further comprising a secondlateral thickness, wherein the second lateral thickness is less than thefirst lateral thickness; a second dielectric spanning the first regionand on the etch stop layer, the second dielectric comprising anamorphous, greater than 90% film density hydrogen barrier material,wherein the memory device is directly adjacent to and embedded withinthe second dielectric; and a via electrode on at least a portion of thememory device, the via electrode comprising: a second conductivehydrogen barrier layer comprising a lateral portion in contact with thememory device; substantially vertical portions directly adjacent to thesecond dielectric; and a second conductive fill material adjacent to thesecond conductive hydrogen barrier layer; and a second region adjacentto the first region, the second region comprising: a second conductiveinterconnect within the first level; the second level furthercomprising: a third conductive interconnect; a via structure coupledbetween the second conductive interconnect and the third conductiveinterconnect; and a third dielectric on the etch stop layer, the thirddielectric directly adjacent to the second dielectric, wherein the thirddielectric comprises a less than 90% film density material, wherein thethird dielectric laterally surrounds a portion of the via structure.

Example 1a: A device comprising: a first region comprising: a firstconductive interconnect within a first dielectric in a first level; asecond level above the first level, the second level comprising: anelectrode structure on the first conductive interconnect, the electrodestructure comprising: a first conductive material; and a firstconductive hydrogen barrier layer on the first conductive material,wherein the electrode structure comprises a first lateral thickness; anetch stop layer comprising an insulator, the etch stop layer laterallysurrounding the electrode structure; a memory device comprising aferroelectric material or a paraelectric material on least a portion ofthe electrode structure, the memory device further comprising a secondlateral thickness, wherein the second lateral thickness is less than thefirst lateral thickness; a second dielectric spanning the first region,the second dielectric comprising an amorphous, greater than 90% filmdensity hydrogen barrier material, wherein the memory device is directlyadjacent to and embedded within the second dielectric; and a viaelectrode on at least a portion of the memory device, the via electrodecomprising: a second conductive hydrogen barrier layer comprising alateral portion in contact with the memory device; substantiallyvertical portions directly adjacent to the second dielectric; and aconductive fill material adjacent to the second conductive hydrogenbarrier layer; and a second region adjacent to the first region, thesecond region comprising: a second conductive interconnect within thefirst level; the second level further comprising: a third conductiveinterconnect; a via structure coupled between the second conductiveinterconnect and the third conductive interconnect; and a thirddielectric on the etch stop layer, the third dielectric directlyadjacent to the second dielectric, wherein the third dielectriccomprises a less than 90% film density material, wherein the thirddielectric laterally surrounds a portion of the via structure.

Example 2a: The device of example 1a, wherein the via electrode furthercomprises a second liner layer between the second conductive hydrogenbarrier layer and the conductive fill material, wherein the second linerlayer comprises a material that is different from a material of thesecond conductive hydrogen barrier layer.

Example 3a: The device of example 1a, wherein the lateral portion of thesecond conductive hydrogen barrier layer is on a first portion of anuppermost surface of the memory device, and wherein the seconddielectric is on a second portion of an uppermost surface of the memorydevice and directly adjacent to sidewalls of the memory device andwherein the lateral portion is directly between the second dielectric.

Example 4a: The device of example 1a, wherein the second conductivehydrogen barrier layer extends on an entire uppermost surface of thememory device.

Example 5a: The device of example 1a, wherein the second conductivehydrogen barrier layer further extends below the uppermost surface andon to a portion of a sidewall of a top electrode of the memory device.

Example 6a: A device comprising: a first region comprising: a firstconductive interconnect within a first dielectric in a first level; asecond level above the first level, the second level comprising: anelectrode structure on the first conductive interconnect, the electrodestructure comprising: a first conductive material; and a firstconductive hydrogen barrier layer on the first conductive material,wherein the electrode structure comprises a first lateral thickness; anetch stop layer comprising an insulator, the etch stop layer laterallysurrounding the electrode structure; a memory device comprising aferroelectric material or a paraelectric material on least a portion ofthe electrode structure, the memory device further comprising a secondlateral thickness, wherein the second lateral thickness is greater thanthe first lateral thickness; a second dielectric spanning the firstregion, the second dielectric comprising an amorphous, greater than 90%film density hydrogen barrier material, wherein the memory device isdirectly adjacent to and embedded within the second dielectric; and avia electrode on at least a portion of the memory device, the viaelectrode comprising: a second conductive hydrogen barrier layercomprising a lateral portion in contact with the memory device;substantially vertical portions directly adjacent to the seconddielectric; and a conductive fill material adjacent to the secondconductive hydrogen barrier layer; and a second region adjacent to thefirst region, the second region comprising: a second conductiveinterconnect within the first level; the second level furthercomprising: a third conductive interconnect; a via structure coupledbetween the second conductive interconnect and the third conductiveinterconnect; and a third dielectric on the etch stop layer, the thirddielectric directly adjacent to the second dielectric, wherein the thirddielectric comprises a less than 90% film density material, wherein thethird dielectric laterally surrounds a portion of the via structure.

Example 7a: A device comprising: a first conductive interconnect; anelectrode structure on the first conductive interconnect, the electrodestructure comprising: a first conductive material; and a firstconductive hydrogen barrier layer on the first conductive material; anetch stop layer comprising an insulator, the etch stop layer laterallysurrounding the electrode structure; a memory device on least a portionof the electrode structure, the memory device comprising a ferroelectricmaterial or a paraelectric material; a second dielectric spanning thefirst region, the second dielectric comprising an amorphous, greaterthan 90% film density hydrogen barrier material, wherein the hydrogenbarrier material further comprises a transition metal, and wherein thememory device is directly adjacent to and embedded within the seconddielectric; a via electrode on at least a portion of the memory device,the via electrode comprising: a second conductive hydrogen barrier layercomprising a lateral portion in contact with the memory device andsubstantially vertical portions directly adjacent to the seconddielectric; and a conductive fill material adjacent to the secondconductive hydrogen barrier layer.

Example 1b; A device comprising a first region, the first regioncomprising a first conductive interconnect within a first dielectric ina first level; a second level above the first level, the second levelcomprising: an electrode structure on the first conductive interconnect,the electrode structure comprising a first conductive hydrogen barrierlayer; and a first conductive fill material on the first conductivehydrogen barrier layer, wherein the electrode structure comprises afirst lateral thickness; an etch stop layer comprising an insulator, theetch stop layer laterally surrounding the electrode structure; a memorydevice comprising a ferroelectric material or a paraelectric material onleast a portion of the electrode structure, the memory device furthercomprising a second lateral thickness, wherein the second lateralthickness is less than the first lateral thickness; an encapsulationlayer comprising a first amorphous, greater than 90% film densityhydrogen barrier material directly on a sidewall of the memory device; asecond dielectric spanning the first region, the second dielectriccomprising a second amorphous, greater than 90% film density hydrogenbarrier material adjacent the encapsulation layer; a via electrode on atleast a portion of the memory device, the via electrode comprising: asecond conductive hydrogen barrier layer comprising a lateral portion incontact with the memory device; substantially vertical portions directlyadjacent to the second dielectric; and a second conductive fill materialadjacent to the second conductive hydrogen barrier layer; a secondregion adjacent to the first region, the second region comprising: asecond conductive interconnect within the first level; the second levelfurther comprising: a third conductive interconnect; a via structurecoupled between the second conductive interconnect and the thirdconductive interconnect; and a third dielectric on the etch stop layer,the third dielectric directly adjacent to the second dielectric and theencapsulation layer, wherein the third dielectric comprises a less than90% film density material, wherein the third dielectric laterallysurrounds a portion of the via structure.

Example 2b: The device of example 1b, wherein the encapsulation layercomprises Al_(x)O_(y), HfO_(x), AlSiO_(x), ZrO_(x),TiO_(x), AlSiO_(x),HfSiO_(x), TaSiO_(x), AN, ZrN, or HfN, and wherein the encapsulationlayer comprises a material that is different from a material of thesecond dielectric.

Example 3b: The device of example 1b, wherein the encapsulation layercomprises a thickness of less than 5 nm.

Example 4b: The device of example 1b, wherein the encapsulation layercomprises a thickness adjacent to an uppermost surface of the memorydevice that is greater than a thickness adjacent to a lowermost surfaceof the memory device.

Example 5b: The device of example 1b, wherein the via electrodecomprises a third lateral thickness that is less than the second lateralthickness and wherein an uppermost surface of the memory devicecomprises a first surface portion and a second surface portion, whereinthe encapsulation layer is further on a first surface portion whereinthe via electrode is on the second surface portion.

Example 6b: The device of example 1b, wherein the via electrodecomprises a third lateral thickness that is greater than the secondlateral thickness and wherein the via electrode covers an uppermostsurface of the memory device.

Example 7b: The device of example 6b, wherein the via electrode furtherextends below the uppermost surface of the memory device and wherein thevia electrode is on a portion of the encapsulation layer.

Example 8b: The device of example 6b, wherein the encapsulation layer isin contact with the first conductive hydrogen barrier layer and whereinthe encapsulation layer is further on an uppermost surface of the firstconductive fill material.

Example 9b: A device comprising: a first region comprising: a firstconductive interconnect within a first dielectric in a first level; anda second level above the first level, the second level comprising: anelectrode structure on the first conductive interconnect, the electrodestructure comprising: a first conductive hydrogen barrier layer; and afirst conductive fill material on the first conductive hydrogen barrierlayer, wherein the electrode structure comprises a first lateralthickness; an etch stop layer comprising an insulator, the etch stoplayer laterally surrounding the electrode structure; a memory devicecomprising a ferroelectric material or a paraelectric material on leasta portion of the electrode structure, the memory device furthercomprising a second lateral thickness, wherein the second lateralthickness is greater than the first lateral thickness; an encapsulationlayer comprising a first amorphous, greater than 90% film densityhydrogen barrier material directly on a sidewall of the memory device; asecond dielectric spanning the first region, the second dielectriccomprising a second amorphous, greater than 90% film density hydrogenbarrier material adjacent the encapsulation layer; a via electrode on atleast a portion of the memory device, the via electrode comprising: asecond conductive hydrogen barrier layer comprising a lateral portion incontact with the memory device; substantially vertical portions directlyadjacent to the second dielectric; and a second conductive fill materialadjacent to the second conductive hydrogen barrier layer; and a secondregion adjacent to the first region, the second region comprising: asecond conductive interconnect within the first level; the second levelfurther comprising: a third conductive interconnect; a via structurecoupled between the second conductive interconnect and the thirdconductive interconnect; and a third dielectric on the etch stop layer,the third dielectric directly adjacent to the second dielectric, whereinthe third dielectric comprises a less than 90% film density material,wherein the third dielectric laterally surrounds a portion of the viastructure.

Example 10b: The device of example 9b, wherein the encapsulation layeris on the etch stop layer but not in contact with the first conductivehydrogen barrier layer or the first conductive fill material.

Example 1 lb: The device of example 9b, wherein the via electrodecomprises a third lateral thickness that is greater than the secondlateral thickness, wherein the via electrode covers an uppermost surfaceof the memory device, wherein the via electrode further extends belowthe uppermost surface of the memory device and wherein the via electrodeis on a portion of the encapsulation layer.

Example 12b: A system comprises a processor; a communication interfacecommunicatively coupled to the processor; and a memory coupled to theprocessor, wherein the memory comprises: bit-cells, wherein one of thebit-cells includes a first region comprising a first conductiveinterconnect within a first dielectric in a first level; a second levelabove the first level, the second level comprising: an electrodestructure on the first conductive interconnect, the electrode structurecomprising a first conductive hydrogen barrier layer; and a firstconductive fill material on the first conductive hydrogen barrier layer,wherein the electrode structure comprises a first lateral thickness; anetch stop layer comprising an insulator, the etch stop layer laterallysurrounding the electrode structure; a memory device comprising aferroelectric material or a paraelectric material on least a portion ofthe electrode structure, the memory device further comprising a secondlateral thickness, wherein the second lateral thickness is less than thefirst lateral thickness; an encapsulation layer comprising a firstamorphous, greater than 90% film density hydrogen barrier materialdirectly on a sidewall of the memory device; a second dielectricspanning the first region, the second dielectric comprising a secondamorphous, greater than 90% film density hydrogen barrier materialadjacent the encapsulation layer; a via electrode on at least a portionof the memory device, the via electrode comprising: a second conductivehydrogen barrier layer comprising a lateral portion in contact with thememory device; substantially vertical portions directly adjacent to thesecond dielectric; and a second conductive fill material adjacent to thesecond conductive hydrogen barrier layer; a second region adjacent tothe first region, the second region comprising: a second conductiveinterconnect within the first level; the second level furthercomprising: a third conductive interconnect; a via structure coupledbetween the second conductive interconnect and the third conductiveinterconnect; and a third dielectric on the etch stop layer, the thirddielectric directly adjacent to the second dielectric and theencapsulation layer, wherein the third dielectric comprises a less than90% film density material, wherein the third dielectric laterallysurrounds a portion of the via structure.

Example 1c: A method of fabricating a device structure, the methodcomprising: forming a first conductive interconnect in a firstdielectric in a memory region and a second conductive interconnect inthe first dielectric in a logic region; depositing an etch stop layer onthe first dielectric and on the first conductive interconnect and on thesecond conductive interconnect; forming an electrode structure on thefirst conductive interconnect by a first process comprising: etching afirst opening in the etch stop layer; depositing a first conductivehydrogen barrier layer in the first opening; and depositing a firstconductive material on the first conductive hydrogen barrier layer;forming a memory device by depositing a material layer stack comprisinga ferroelectric material or a paraelectric material on the electrodestructure and etching the material layer stack; depositing a seconddielectric comprising an amorphous, greater than 90% film densityhydrogen barrier material on the memory device and on the etch stoplayer; forming a via electrode on the memory device by a second processcomprising: forming a second opening in the second dielectric;depositing a second conductive hydrogen barrier layer on at least aportion of a first uppermost surface of the memory device in the secondopening; and depositing a second conductive material on the secondconductive hydrogen barrier layer; etching and removing the seconddielectric from the adjacent logic region and depositing a thirddielectric comprising a less than 90% film density material; forming ahanging trench over the second conductive interconnect; forming a thirdopening in the third dielectric and in the etch stop layer; anddepositing a conductive material in the third opening and in the hangingtrench to form a via structure on the second conductive interconnect anda metal line on the via structure.

Example 2c: The method of example 1c, wherein depositing the materiallayer stack comprises: depositing the ferroelectric material,comprising: one of bismuth ferrite (BFO), BFO with a first dopingmaterial where in the first doping material is one of lanthanum, orelements from lanthanide series of periodic table; lead zirconiumtitanate (PZT), or PZT with a second doping material, wherein the seconddoping material is one of La, Nb; a relaxor ferroelectric material whichincludes one of lead magnesium niobate (PMN), lead magnesiumniobate-lead titanate (PMN-PT), lead lanthanum zirconate titanate(PLZT), lead scandium niobate (PSN), barium titanium-bismuth zincniobium tantalum (BT-BZNT), or Barium titanium-barium strontium titanium(BT-BST); a perovskite material which includes one of: BaTiO3, PbTiO3,KNbO3, or NaTaO3; hexagonal ferroelectric which includes one of: YMnO3,or LuFeO3; hexagonal ferroelectrics of a type h-RMnO3, where R is a rareearth element which includes one of: cerium (Ce), dysprosium (Dy),erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum(La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm),samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), ytterbium(Yb), or yttrium (Y); Hafnium (Hf), Zirconium (Zr), Aluminum (Al),Silicon (Si), their oxides or their alloyed oxides; Hafnium oxides asHf1-x Ex O_(y), where E can be Al, Ca, Ce, Dy, er, Gd, Ge, La, Sc, Si,Sr, Sn, Zr, or Y; Al(1-x)Sc(x)N, Ga(1-x)Sc(x)N, Al(1-x)Y(x)N orAl(1-x-y)Mg(x)Nb(y)N, y doped HfO2, where x includes one of: Al, Ca, Ce,Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y, wherein ‘x’ is a fraction; orniobate type compounds LiNbO3, LiTaO3, lithium iron tantalum oxyfluoride, barium strontium niobate, sodium barium niobate, or potassiumstrontium niobate; or an improper ferroelectric material which includesone of: [PTO/STO]n or [LAO/STO]n, where ‘n’ is between 1 to 100; ordepositing the paraelectric material comprising SrTiO3, Ba(x)Sr(y)TiO3(where x is −0.05, and y is 0.95), HfZrO2, Hf—Si—O, La-substitutedPbTiO3, or a PMN-PT based relaxor ferroelectrics.

Example 3c: The method of example 1c, wherein etching the first openingcomprises forming the first opening with a first lateral thickness thatis greater than a second lateral thickness of the first conductiveinterconnect, and wherein etching the material layer stack furthercomprises forming the memory device having a third lateral thicknessthat is less than the first lateral thickness.

Example 4c: The method of example 3c, wherein depositing the firstconductive hydrogen barrier layer comprises utilizing a first atomiclayer deposition process to blanket deposit the first conductivehydrogen barrier layer on the first conductive interconnect and onsidewalls of the etch stop layer to form a conductive hydrogen barrierlayer having a lateral portion and substantially vertical portionsconnected to the lateral portion.

Example 5c: The method of example 4c, wherein depositing the firstconductive hydrogen barrier layer comprises using the first atomic layerdeposition process to deposit a material comprising TiAlN, with greaterthan 30 atomic percent AlN, TaN with greater than 30 atomic percent N₂,TiSiN with greater than 20 atomic percent SiN, TaC, TiC, WC, WN,carbonitrides of Ta, Ti or W, TiO, Ti₂O, WO₃, SnO₂, ITO, IGZO, ZO orMETGLAS series of alloys.

Example 6c: The method of example 5c, wherein forming the electrodestructure further comprises performing a chemical mechanicalplanarization process to form the electrode structure that issubstantially comprised of the first conductive material with aperipheral boundary comprising the first conductive hydrogen barrierlayer, and wherein the first conductive material is planarized to form asecond uppermost surface that is substantially co-planar with a thirduppermost surface of the etch stop layer.

Example 7c: The method of example 1c, wherein depositing the seconddielectric comprises utilizing a second atomic layer deposition processto deposit a material comprising a transition metal and oxygen, such asbut not limited to Al_(x)O_(y), HfO_(x), ZrO_(x), TaO_(x) or TiO_(x).

Example 8c: The method of example 1c, wherein depositing the seconddielectric comprises utilizing a plurality of processing operationswhere a first operation comprises utilizing a physical vapor deposition(PVD) process to deposit a material comprising a transition metal andoxygen, such as but not limited to Al_(x)O_(y), HfO_(x), ZrO_(x),TaO_(x), TiO_(x), AlSiO_(x), HfSiO_(x), TaSiO_(x), or a transition metaland nitrogen, such as, but not limited to AlN, ZrN, or HfN, wherein thePVD process deposits the second dielectric to a thickness of less than 5nm, and further wherein the PVD process does not expose the memorydevice to hydrogen.

Example 9c: The method of example 8c, further comprises a third atomiclayer deposition or a chemical vapor deposition process to deposit amaterial comprising Al_(x)O_(y), HfO_(x), ZrO_(x), TaO_(x), TiO_(x),AlSiO_(x), HfSiO_(x), TaSiO_(x), AN, ZrN, or HfN.

Example 10c: The method of example 1c, wherein forming the via electrodecomprising forming an opening comprising a fourth lateral thickness thatis less than a fifth lateral thickness of the memory device.

Example 11c: The method of example 1c, wherein forming the via electrodefurther comprises: forming an opening comprising a sixth lateralthickness that is greater than a seventh lateral thickness of the memorydevice; and over-etching portions of the second dielectric below thefirst uppermost surface.

Example 12c: The method of example 1c, wherein depositing the secondconductive hydrogen barrier layer comprises depositing on an entirefirst uppermost surface, and on sidewall of a top electrode of thememory device.

Example 13c: A method of fabricating a device structure, the methodcomprising: forming a first conductive interconnect in a firstdielectric in a memory region and a second conductive interconnect inthe first dielectric in a logic region; depositing an etch stop layer onthe first dielectric and on the first conductive interconnect and on thesecond conductive interconnect; forming an electrode structure on thefirst conductive interconnect by a first process comprising: etching afirst opening in the etch stop layer; depositing a first conductivematerial in the first opening; depositing a first conductive hydrogenbarrier layer on the first conductive material; planarizing the firstconductive hydrogen barrier layer; forming a memory device by depositinga material layer stack comprising a ferroelectric material or aparaelectric material on the electrode structure and etching thematerial layer stack; depositing a second dielectric comprising anamorphous, greater than 90% film density hydrogen barrier material onthe memory device and on the etch stop layer; forming a via electrode onthe memory device by a second process comprising: forming a secondopening in the second dielectric; depositing a second conductivehydrogen barrier layer on at least a portion of an uppermost surface ofthe memory device in the second opening; and depositing a secondconductive material on the second conductive hydrogen barrier layer;etching and removing the second dielectric from the logic region anddepositing a third dielectric comprising a less than 90% film densitymaterial; forming a hanging trench over the second conductiveinterconnect; forming a third opening in the third dielectric and in theetch stop layer; and depositing a conductive material in the thirdopening and in the hanging trench to form a via structure on the secondconductive interconnect and a metal line on the via structure.

Example 14c: The method of example 1c, wherein depositing the firstconductive hydrogen barrier layer comprises utilizing an atomic layerdeposition process to blanket deposit the first conductive hydrogenbarrier layer on the first conductive interconnect and on sidewalls ofthe etch stop layer to form a conductive hydrogen barrier layer having alateral portion and substantially vertical portions, and whereindepositing the first conductive hydrogen barrier layer comprising usingthe atomic layer deposition process to deposit a material comprisingTiAlN, with greater than 30 atomic percent AN, TaN with greater than 30atomic percent N₂, TiSiN with greater than 20 atomic percent SiN, TaC,TiC, W_(C), WN, carbonitrides of Ta, Ti or W, TiO, Ti₂O, WO₃, SnO₂, ITO,IGZO, ZO or METGLAS series of alloys.

Example 15c: The method of example 13c, wherein etching the firstopening comprises forming the first opening with a first lateralthickness that is less than a second lateral thickness of the firstconductive interconnect, and wherein etching the material layer stackfurther comprises forming the memory device having a third lateralthickness that is greater than the first lateral thickness.

Example 16c: The method of example 13c, wherein etching the materiallayer stack further recesses the etch stop layer below an interfacebetween the memory device and the etch stop layer, and whereindepositing the second dielectric further comprises depositing below theinterface.

Example 17c: A method of fabricating a device structure, the methodcomprising: depositing an etch stop layer on a first conductiveinterconnect formed within a first dielectric in a memory region and ona second conductive interconnect formed within the first dielectric inan adjacent logic region; forming an electrode structure comprising afirst conductive hydrogen barrier layer on the first conductiveinterconnect and a first conductive material on the first conductivehydrogen barrier layer; forming a memory device by depositing a materiallayer stack on the electrode structure and etching the material layerstack, wherein etching to form the memory device further comprisesrecessing portions of the first conductive material; depositing a seconddielectric comprising an amorphous and greater than 90% film densityhydrogen barrier material on the memory device; forming a via electrodecomprising a second conductive hydrogen barrier layer on the memorydevice, wherein the second conductive hydrogen barrier layer is incontact with an uppermost surface of the memory device; etching andremoving the second dielectric from the logic region and depositing athird dielectric comprising a less than 90% film density material;forming a hanging trench over the second conductive interconnect formingan opening in the third dielectric and in the etch stop layer; anddepositing liner layer in the opening and in the hanging trench, theliner layer extending continuously from an uppermost surface of thesecond conductive interconnect to an uppermost surface of the thirddielectric; depositing a fill metal in the opening and in the hangingtrench on the liner layer; planarizing to remove the fill metal and theliner layer from above the third dielectric to form a via structure onthe second conductive interconnect and a metal line on the viastructure.

Example 18c: The method of example 17c, wherein recessing portions ofthe first conductive material forms a first surface of the firstconductive material adjacent the memory device that is below anuppermost surface of the etch stop layer, and wherein depositing thesecond dielectric comprises utilizing an atomic layer deposition processto deposit a material comprising a transition metal and oxygen, such asbut not limited to Al_(x)O_(y), HfO_(x), ZrO_(x), TaO_(x) or TiO_(x),wherein depositing the second dielectric further comprises depositingbelow an interface between the first conductive material and the memorydevice.

Example 1d: A device comprising: a first region comprising: a firstconductive interconnect within a first dielectric in a first level; asecond level above the first level, the second level comprising: anelectrode structure on at least a portion of the first conductiveinterconnect, the electrode structure comprising: a first conductivehydrogen barrier layer; and a first conductive fill material adjacent tothe first conductive hydrogen barrier layer; an insulator layerlaterally surrounding the electrode structure; a memory device on leasta portion of the electrode structure, the memory device comprising aferroelectric material or a paraelectric material; a second dielectricspanning the first region, the second dielectric comprising anamorphous, greater than 90% film density hydrogen barrier material,wherein the memory device is directly adjacent to and embedded withinthe second dielectric; and a via electrode on at least a portion of thememory device, the via electrode comprising: a second conductivehydrogen barrier layer comprising a first lateral portion in contactwith the memory device first substantially vertical portions directlyadjacent to the second dielectric; and a second conductive fill materialadjacent to the second conductive hydrogen barrier layer; and a thirdlevel above the second level, the third level comprising: a thirddielectric comprising a first less than 90% film density material,wherein the third dielectric is on the second dielectric; and a contactelectrode structure on the via electrode, the contact electrodestructure comprising: a third conductive hydrogen barrier layercomprising a second lateral portion on the via electrode and secondsubstantially vertical portions directly adjacent to the thirddielectric; and a third conductive fill material adjacent to the secondconductive hydrogen barrier layer; and a second region adjacent to thefirst region, the second region comprising: a fourth dielectriccomprising a second less than 90% film density material on the insulatorlayer, the fourth dielectric directly adjacent to the second dielectric,a second conductive interconnect within the first dielectric in thefirst level; a third conductive interconnect within the third level,wherein the third dielectric extends over the fourth dielectric andwherein the third dielectric laterally surrounds the third conductiveinterconnect; and a via structure coupled between the second conductiveinterconnect and the third conductive interconnect, wherein a firstportion of the via structure is adjacent to the insulator layer and asecond portion of the via structure is adjacent to the fourthdielectric.

Example 2d: The device of example 1d, wherein the insulator layercomprises silicon and one or more of nitrogen and carbon and the seconddielectric does not comprise silicon nitride.

Example 3d: The device of example 1d, wherein the contact electrodestructure comprises a first lateral thickness that is greater than asecond lateral thickness of the via electrode.

Example 4d: The device of example 1d, wherein the first conductivehydrogen barrier layer, the second conductive hydrogen barrier layer orthe third conductive hydrogen barrier layer comprise TiAlN, with greaterthan 30 atomic percent AN, TaN with greater than 30 atomic percent N₂,TiSiN with greater than 20 atomic percent SiN, TaC, TiC, W_(C), WN,carbonitrides of Ta, Ti or W, TiO, Ti₂O, WO₃, SnO₂, ITO, IGZO, ZO orMETGLAS series of alloys.

Example 5d: The device of example 4d, wherein the first conductivehydrogen barrier layer, the second conductive hydrogen barrier layer andthe third conductive hydrogen barrier layer comprise differentmaterials.

Example 6d: The device of example 1d, wherein the first conductivehydrogen barrier layer, the second conductive hydrogen barrier layercomprise a different material from a material of the third conductivehydrogen barrier layer.

Example 7d: The device of example 1d, wherein the electrode structure isa first electrode structure, wherein the memory device is a first memorydevice, wherein the via electrode is a first via electrode, and whereinthe device further comprises: a fourth conductive interconnect on afirst plane behind the first conductive interconnect on a second plane;a second memory device above the fourth conductive interconnect; asecond electrode structure coupled between the second memory device andthe fourth conductive interconnect, the second electrode structurecomprising the first conductive hydrogen barrier layer; a second viaelectrode comprising the second conductive hydrogen barrier layer andthe second conductive fill material, and wherein the contact electrodestructure is further on and electrically coupled with the second viaelectrode.

Example 8d: The device of example 1d, wherein the third conductivehydrogen barrier layer extends on the second dielectric and is contactwith the second conductive hydrogen barrier layer of the second viaelectrode, and wherein the third conductive fill material laterallyextends over the second dielectric and over the second via electrode.

Example 9d: The device of example 1d, wherein the via structurecomprises a first vertical thickness that is substantially equal to asum of vertical thicknesses of the electrode structure, the memorydevice, and the via electrode.

Example 10d: A device comprising: a first region comprising: a firstconductive interconnect within in a first level; a second level abovethe first level, the second level comprising: an electrode structure onat least a portion of the first conductive interconnect, the electrodestructure comprising a first conductive hydrogen barrier layer and afirst conductive fill material adjacent to the first conductive hydrogenbarrier layer; an insulator layer laterally surrounding the electrodestructure; a memory device on least a portion of the electrodestructure, the memory device comprising a ferroelectric material or aparaelectric material; a first dielectric spanning the first region, thefirst dielectric comprising an amorphous, greater than 90% film densityhydrogen barrier material, wherein the memory device is directlyadjacent to and embedded within the first dielectric; and a viaelectrode on at least a portion of the memory device, the via electrodecomprising: a second conductive hydrogen barrier layer comprising afirst lateral portion on the memory device and first substantiallyvertical portions directly adjacent to the first dielectric; a firstconductive fill material; and a first liner layer directly between thesecond conductive hydrogen barrier layer and the first conductive fillmaterial; and a third level above the second level, the third levelcomprising: a second dielectric comprising a first less than 90% filmdensity material on the first dielectric; and a contact electrodestructure comprising: a second liner layer comprising a second lateralportion on the via electrode and second substantially vertical portionsdirectly adjacent to the second dielectric; and a third conductive fillmaterial adjacent to the second liner layer; a second region adjacent tothe first region, the second region comprising: a third dielectriccomprising a second less than 90% film density material directlyadjacent to the first dielectric, the third dielectric on the insulatorlayer, and wherein the second dielectric extends laterally on the thirddielectric; a second conductive interconnect within the first level; athird conductive interconnect within the third level; and a viastructure within the second level, the via structure coupled between thesecond conductive interconnect and the third conductive interconnect,wherein the via structure and the third conductive interconnectcomprise: a third liner layer adjacent to sidewalls of the thirddielectric and the second dielectric, the third liner layer extendingfrom an uppermost surface of the second conductive interconnect to anuppermost surface of the second dielectric; and a third conductive fillmaterial continuously filling the via structure and the third conductiveinterconnect.

Example 11d: The device of example 10d, wherein the second liner layerand the third liner layer comprise a same material.

Example 12d: The device of example 10d, wherein the third conductivefill material and the third conductive fill material comprise a samematerial.

Example 13d: A device comprising: a first region comprising: a firstconductive interconnect within a first dielectric in a first level; anda second level above the first level, the second level comprising: anelectrode structure on at least a portion of the first conductiveinterconnect, the electrode structure comprising: a first conductivehydrogen barrier layer; and a first conductive fill material adjacent tothe first conductive hydrogen barrier layer; an insulator layerlaterally surrounding the electrode structure; a memory device on leasta portion of the electrode structure, the memory device comprising aferroelectric material or a paraelectric material; a second dielectriccomprising an amorphous greater than 90% film density hydrogen barriermaterial, wherein the memory device is directly adjacent to and embeddedwithin the second dielectric; a via electrode comprising: a secondconductive hydrogen barrier layer comprising a first lateral portion onthe memory device and first substantially vertical portions directlyadjacent to the second dielectric; a first conductive fill material; anda first liner layer directly between the second conductive hydrogenbarrier layer and the first conductive fill material; a second regionadjacent to the first region, the second region comprising: a secondconductive interconnect within the first level; a via structure on thesecond conductive interconnect, the via structure within the secondlevel; a metal line within a third level, the metal line in contact withthe via structure; a third dielectric comprising a less than 90% filmdensity material on the insulator layer, wherein the via structure andthe metal line are laterally surrounded by the third dielectric, thethird dielectric laterally adjacent to and in contact with the seconddielectric, wherein the third dielectric laterally extends on anuppermost surface of the second dielectric; and wherein the first regionfurther comprises: a contact electrode structure on the via electrode,the contact electrode comprising: a third conductive hydrogen barrierlayer comprising a lateral portion on the via electrode and verticalportions adjacent to the third dielectric; a second conductive fillmaterial; and a second liner layer directly between the secondconductive hydrogen barrier layer and the second conductive fillmaterial.

Example 14d: The device of example 13d, the metal line has a lowermostsurface that is at or below an uppermost surface of the via electrode.

Example 1e: A method of fabricating a device structure, the methodcomprising: forming a first conductive interconnect in a firstdielectric in a memory region and a second conductive interconnect inthe first dielectric in a logic region; depositing an etch stop layer onthe first dielectric and on the first conductive interconnect and on thesecond conductive interconnect; forming an electrode structure on thefirst conductive interconnect by a first process comprising: etching afirst opening in the etch stop layer; depositing a first conductivehydrogen barrier layer in the first opening; and depositing a firstconductive material on the first conductive hydrogen barrier layer;forming a memory device by depositing a material layer stack comprisinga ferroelectric material or a paraelectric material on the electrodestructure and etching the material layer stack; depositing a seconddielectric comprising an amorphous, greater than 90% film densityhydrogen barrier material on the memory device and on the etch stoplayer; forming a via electrode on the memory device by a second processcomprising: forming a second opening in the second dielectric;depositing a second conductive hydrogen barrier layer on at least aportion of a first uppermost surface of the memory device in the secondopening; and depositing a second conductive material on the secondconductive hydrogen barrier layer; etching and removing the seconddielectric from the logic region and depositing a third dielectriccomprising a less than 90% film density material; etching the thirddielectric to form a via opening and exposing the second conductiveinterconnect; filling the via opening with a first one or moreconductive materials; planarizing to form a via structure; depositing afourth dielectric on the via electrode, on the second dielectric, on thethird dielectric and on the via structure; forming a contact electrodeby a third process, comprising: forming a third opening in the fourthdielectric and exposing the via electrode; depositing a third conductivehydrogen barrier layer on the via electrode in the third opening;depositing a second one or more conductive materials on the thirdconductive hydrogen barrier layer; and planarizing the second one ormore conductive materials and the third conductive hydrogen barrierlayer; forming a trench opening in the fourth dielectric and exposingthe via structure; and depositing a third one or more conductivematerials in the trench opening on the via structure to form a metalline.

Example 2e: The method of example 1e, wherein depositing the firstconductive hydrogen barrier layer comprises utilizing an atomic layerdeposition process to blanket deposit the first conductive hydrogenbarrier layer on the first conductive interconnect and on sidewalls ofthe etch stop layer to form a conductive hydrogen barrier layer having alateral portion and substantially vertical portions connected to thelateral portion, wherein depositing the first conductive hydrogenbarrier layer comprising using an atomic layer deposition process todeposit a material comprising TiAlN, with greater than 30 atomic percentAN, TaN with greater than 30 atomic percent N₂, TiSiN with greater than20 atomic percent SiN, TaC, TiC, W_(C), WN, carbonitrides of Ta, Ti orW, TiO, Ti₂O, WO₃, SnO₂, ITO, IGZO, ZO or METGLAS series of alloys.

Example 3e: The method of example 1e, wherein depositing the thirddielectric further comprises depositing the third dielectric on a seconduppermost surface of the second dielectric and performing a firstplanarization process to remove third dielectric from the seconduppermost surface, wherein the first planarization process forms thesecond uppermost surface and a third uppermost surface of the thirddielectric that are substantially co-planar.

Example 4e: The method of example 1e, wherein forming the firstelectrode structure further comprises performing a second planarizationprocess to form the first conductive material comprising a substantiallyplanar fourth uppermost surface, wherein the planar fourth uppermostsurface is substantially co-planar with a fifth uppermost surface of theetch stop layer.

Example 5e: The method of example 1e, wherein the via electrode is afirst via electrode, the memory device is a first memory device, whereinetching the material layer stack further comprises forming a secondmemory device on a first plane behind the first memory device on asecond plane, and wherein the third process further comprises forming asecond via electrode on the second memory device, wherein forming thethird opening in the fourth dielectric further comprises forming a fifthopening and exposing the second via electrode, and wherein depositingthe third conductive hydrogen barrier layer further comprises depositingon the second via electrode.

Example 6e: The method of example 5e, wherein depositing the third oneor more conductive materials further comprises depositing a liner layerand a conductive fill material on the liner layer.

Example 7e: The method of example 6e, wherein after depositing a thirdone or more conductive materials in the trench opening, a thirdplanarization process is performed wherein the third planarizationprocess forms a substantially planar sixth uppermost surface of thecontact electrode that is co-planar with a seventh uppermost surface ofthe metal line.

Example 8e: The method of example 7e, wherein forming the via electrodefurther comprises: forming the second opening comprising a fourthlateral thickness that is greater than a fifth lateral thickness of thememory device; and over-etching portions of the second dielectric belowthe first uppermost surface.

Example 9e: A method of fabricating a device structure, the methodcomprising: forming a first conductive interconnect in a firstdielectric in a memory region and a second conductive interconnect inthe first dielectric in a logic region; depositing an etch stop layer onthe first dielectric and on the first conductive interconnect and on thesecond conductive interconnect; forming an electrode structure on thefirst conductive interconnect by a first process comprising: etching afirst opening in the etch stop layer; depositing a first conductivehydrogen barrier layer in the first opening; and depositing a firstconductive material on the first conductive hydrogen barrier layer;forming a memory device by depositing a material layer stack comprisinga ferroelectric material or a paraelectric material on the electrodestructure and etching the material layer stack; depositing a seconddielectric comprising an amorphous greater than 90% film densityhydrogen barrier material on the memory device and on the etch stoplayer; forming a via electrode on the memory device by a second processcomprising: forming a second opening in the second dielectric;depositing a second conductive hydrogen barrier layer on at least aportion of an uppermost surface of the memory device in the secondopening; depositing a conductive material on the second conductivehydrogen barrier layer; etching and removing the second dielectric fromthe logic region and depositing a third dielectric comprising a lessthan 90% film density material; performing a planarization of the thirddielectric, wherein the planarization forms a first portion of the thirddielectric above the second dielectric and forms a second portion of thethird dielectric directly laterally adjacent to the second dielectric;etching the third dielectric to form a trench opening above the viaelectrode; forming a contact electrode in the trench opening bydepositing a third conductive hydrogen barrier layer on the viaelectrode in the trench opening and on the third dielectric, bydepositing a second conductive material on the third conductive hydrogenbarrier layer, and by planarizing to remove the second conductivematerial and the third conductive hydrogen barrier layer from above thethird dielectric; etching the third dielectric to form a hanging trench;masking a portion of the hanging trench to form a via opening in thethird dielectric below the hanging trench; and forming a via structureby depositing one or more conductive materials in the via opening and inthe hanging trench.

Example 10e: The method of example 9e, wherein performing theplanarization comprises forming a vertical thickness of the thirddielectric above the second dielectric that is at least equal to avertical thickness of the contact electrode.

Example 11e: The method of example 9e, wherein etching the thirddielectric to form the hanging trench further comprises etching to alevel that is substantially co-planar with an uppermost surface of thevia electrode.

Example 12e: The method of example 9e, wherein etching the materiallayer stack further recesses the etch stop layer to a level below aninterface between the memory device and the etch stop layer, and whereindepositing the second dielectric further comprises depositing below theinterface.

Example 13e: The method of example 9e wherein depositing a liner layercomprises simultaneously depositing a liner layer in the via opening, inthe hanging trench and in the trench opening and on uppermost surface ofthe fourth dielectric.

Example 14e: The method of example 9e, wherein the via opening in thethird dielectric comprises a first lateral width that is between 25-75%of a second lateral width of the hanging trench.

Example 1f: A device comprising: a first region comprising: a firstconductive interconnect within a first dielectric in a first level; asecond level above the first level, the second level comprising: a firstelectrode structure on at least a portion of the first conductiveinterconnect, the first electrode structure comprising: a firstconductive hydrogen barrier layer; and a first conductive fill materialadjacent to the first conductive hydrogen barrier layer; an insulatorlayer laterally surrounding the first electrode structure; and a memorydevice on least a portion of the first electrode structure, the memorydevice comprising a ferroelectric material or a paraelectric material; asecond dielectric spanning the first region and on the insulator layer,the second dielectric comprising an amorphous, greater than 90% filmdensity hydrogen barrier material, wherein the memory device is directlyadjacent to and embedded within the second dielectric; a thirddielectric comprising a less than 90% film density material on thesecond dielectric, the third dielectric within a third level above thesecond level; a second electrode structure coupled with the memorydevice, the second electrode structure comprising: a via electrode on atleast a portion of the memory device and adjacent to the seconddielectric; and a trench electrode on the via electrode, the trenchelectrode adjacent to the third dielectric; a second conductive hydrogenbarrier layer comprising: a lateral portion on the memory device; firstsubstantially vertical portions directly adjacent to the seconddielectric; and second substantially vertical portions directly adjacentto the third dielectric; and a second conductive fill material thatextends continuously from the lateral portion to a first uppermostsurface of the third dielectric; and a second region adjacent to thefirst region, the second region comprising: a fourth dielectriccomprising dielectric comprising a first less than 90% film densitymaterial directly adjacent to the second dielectric and below the thirddielectric; a second conductive interconnect within the first level; athird conductive interconnect within the third level, wherein the thirddielectric extends over the fourth dielectric and wherein the thirddielectric laterally surrounds the third conductive interconnect; and avia structure coupled between the second conductive interconnect and thethird conductive interconnect, wherein at least a first portion of thevia structure is adjacent to the insulator layer.

Example 2f: The device of example 1f, wherein the trench electrode has afirst width and the via electrode has a second width, where the firstwidth is greater than the second width.

Example 3f: The device of example 2f, wherein the second conductivehydrogen barrier layer further extends on a second uppermost surface ofthe second dielectric.

Example 4f: The device of example 1f, wherein the electrode structure isa first electrode structure, wherein the memory device is a first memorydevice, wherein the via electrode is a first via electrode, and whereinthe device further comprises: a fourth conductive interconnect on afirst plane behind the first conductive interconnect on a second plane;a second memory device above the fourth conductive interconnect; a thirdelectrode structure coupled between the second memory device and thefourth conductive interconnect, the third electrode structure comprisingthe first conductive hydrogen barrier layer; a second via electrodecomprising the second conductive hydrogen barrier layer and the secondconductive fill material, and wherein the trench electrode is further onand electrically coupled with the second via electrode.

Example 5f: The device of example 4f, wherein the second conductivehydrogen barrier layer extends from the first via electrode to thesecond via electrode on the second dielectric, and wherein the secondconductive fill material laterally extends over the second dielectricand over the second via electrode.

Example 6f: The device of example 4f, wherein the via structurecomprises a first vertical thickness that is substantially equal to asum of vertical thicknesses of the electrode structure, the memorydevice, and the via electrode.

Example 7f: The device of example 4f, wherein the third conductiveinterconnect comprises a second vertical thickness that is substantiallyequal to a fourth vertical thickness of the trench electrode.

Example 8f: The device of example 4f, wherein the electrode structurecomprises a first lateral thickness; the memory device furthercomprising a second lateral thickness, wherein the first lateralthickness is less than the second lateral thickness.

Example 9f: A device comprising: a first region comprising: a firstconductive interconnect within a first dielectric in a first level; asecond level above the first level, the second level comprising: a firstelectrode structure on the first conductive interconnect, the firstelectrode structure comprising: a first conductive fill material; afirst conductive hydrogen barrier layer on the first conductive fillmaterial; an insulator layer laterally surrounding the first electrodestructure; a memory device on least a portion of the first electrodestructure, the memory device comprising a ferroelectric material or aparaelectric material; and a second dielectric spanning the first regionand on the insulator layer, the second dielectric comprising anamorphous, greater than 90% film density hydrogen barrier material,wherein the memory device is directly adjacent to and embedded withinthe second dielectric; a third dielectric comprising a less than 90%film density material on the second dielectric, the third dielectricwithin a third level above the second level; a second electrodestructure coupled with the memory device, the second electrode structurecomprising: a via electrode on at least a portion of the memory deviceand adjacent to the second dielectric; a trench electrode on the viaelectrode, the trench electrode adjacent to the third dielectric; asecond conductive hydrogen barrier layer comprising: a lateral portionon the memory device; first substantially vertical portions directlyadjacent to the second dielectric; and second substantially verticalportions directly adjacent to the third dielectric; a second conductivefill material that extends continuously from above the lateral portionto an uppermost surface of the third dielectric; and a liner layerbetween the second conductive hydrogen barrier layer and the secondconductive fill material; and a second region adjacent to the firstregion, the second region comprising: a fourth dielectric comprisingdielectric comprising a first less than 90% film density materialdirectly adjacent to the second dielectric and below the thirddielectric; a second conductive interconnect within the first level; athird conductive interconnect within the third level, wherein the thirddielectric extends over the fourth dielectric and wherein the thirddielectric laterally surrounds the third conductive interconnect; and avia structure coupled between the second conductive interconnect and thethird conductive interconnect, wherein at least a first portion of thevia structure is adjacent to the insulator layer.

Example 10f: The device of example 9f, wherein the memory device is incontact with the first conductive hydrogen barrier layer and the firstconductive fill material, and wherein the memory device covers the firstelectrode structure.

Example 11 f: A device comprising: a first region comprising: a firstconductive interconnect within a first dielectric in a first level; asecond level above the first level, the second level comprising: a firstelectrode structure on at least a portion of the first conductiveinterconnect, the first electrode structure comprising: a firstconductive hydrogen barrier layer; and a first conductive fill materialadjacent to the first conductive hydrogen barrier layer; an insulatorlayer laterally surrounding the first electrode structure; a memorydevice on least a portion of the first electrode structure, the memorydevice comprising a ferroelectric material or a paraelectric material; asecond dielectric spanning the first region, the second dielectriccomprising an amorphous, greater than 90% film density hydrogen barriermaterial, wherein the memory device is directly adjacent to and embeddedwithin the second dielectric; a second region adjacent to the firstregion, the second region comprising: a second conductive interconnectwithin the first level; a via structure on the second conductiveinterconnect, the via structure within the second level; a metal linewithin a third level, the metal line in contact with the via structure;a third dielectric comprising a less than 90% film density material onthe insulator layer, the third dielectric laterally adjacent to and incontact with the second dielectric, and wherein the via structure andthe metal line are laterally surrounded by the third dielectric, whereinthe third dielectric laterally extends on an uppermost surface of thesecond dielectric; and wherein the first region further comprises: asecond electrode structure coupled with the memory device, the secondelectrode structure comprising: a via electrode on at least a portion ofthe memory device and adjacent to the second dielectric, the viaelectrode comprising: a second conductive hydrogen barrier layercomprising a first lateral portion on the memory device and firstsubstantially vertical portions directly adjacent to the seconddielectric; and a second conductive fill material on the secondconductive hydrogen barrier layer, a trench electrode on the viaelectrode, the trench electrode adjacent to the third dielectric, thetrench electrode comprising: the second conductive hydrogen barrierlayer comprising a second lateral portion on the second dielectric; andsecond substantially vertical portions directly adjacent to the thirddielectric, and wherein the second conductive fill material is directlyadjacent to the second conductive hydrogen barrier layer and wherein thesecond conductive fill material extends continuously from a level of alowermost surface to a level of an uppermost surface of the thirddielectric.

Example 12f: The device of example 11f wherein the metal line has alowermost surface that is at or below an uppermost surface of the viaelectrode.

Example 1g: A method of fabricating a device structure, the methodcomprising: forming a first conductive interconnect in a firstdielectric in a memory region and a second conductive interconnect inthe first dielectric in a logic region; depositing an etch stop layer onthe first dielectric and on the first conductive interconnect and on thesecond conductive interconnect; forming a first electrode structure onthe first conductive interconnect by a first process comprising: etchinga first opening in the etch stop layer; depositing a first conductivehydrogen barrier layer in the first opening; and depositing a conductivematerial on the first conductive hydrogen barrier layer; forming amemory device by depositing a material layer stack comprising aferroelectric material or a paraelectric material on the first electrodestructure and etching the material layer stack; depositing a seconddielectric comprising an amorphous greater than 90% film densityhydrogen barrier material on the memory device and on the etch stoplayer; etching and removing the second dielectric from the logic regionand depositing a third dielectric comprising a first less than 90% filmdensity material; etching the third dielectric to form a first viaopening and exposing the second conductive interconnect; filling thefirst via opening with a first one or more conductive materials to forma via structure; depositing a fourth dielectric comprising a second lessthan 90% film density material on the third dielectric and on the viastructure; forming a trench opening in the fourth dielectric andexposing the via structure; depositing a second one or more conductivematerials in the trench opening on the via structure to form a metalline; forming a second electrode structure on the memory device by asecond process comprising: forming a hanging trench opening in thefourth dielectric and exposing the third dielectric; forming a mask on aportion of the hanging trench, the mask providing a second opening thatexposes a portion of the second dielectric; etching the seconddielectric through the second opening to form a second via opening, thesecond via opening exposing the memory device; depositing a secondconductive hydrogen barrier layer on a first uppermost surface of thememory device, in the second via opening, and in the hanging trench; anddepositing a third one or more conductive materials on the secondconductive hydrogen barrier layer in the second via opening to form avia electrode; and planarizing to form a contact electrode in thehanging trench, on the via electrode.

Example 2g: The method of example 1g, wherein the via electrode is afirst via electrode, the memory device is a first memory device, whereinetching the material layer stack further comprises forming a secondmemory device on a first plane behind the first memory device on asecond plane, and wherein the hanging trench is a first hanging trench,wherein the second process further comprises: forming a second hangingtrench above the second memory device; forming the mask in the secondhanging trench, the mask providing a third opening that exposes aportion of the second dielectric; etching the second dielectric throughthe third opening to form a third via opening, the third via openingexposing the second memory device; depositing the second conductivehydrogen barrier layer on the second memory device in the third viaopening and in the second hanging trench; and wherein the planarizingforms a second via electrode in the third via opening, and further formsthe contact electrode in the second hanging trench on the second viaelectrode.

Example 3g: The method of example 1g, wherein after depositing a thirdone or more conductive materials in the hanging trench opening and inthe via opening, a third planarization process is performed wherein thethird planarization process forms a substantially planar sixth uppermostsurface of the trench electrode that is co-planar with a seventhuppermost surface of the metal line.

Example 4g: The method of example 1g, herein the second via openingcomprises a first lateral thickness that is less than a second lateralthickness of the memory device, and wherein the hanging trench openingcomprises a third lateral thickness that is greater than the firstlateral thickness.

Example 5g: The method of example 1g, wherein forming the via electrodefurther comprises: forming the second opening comprising a fourthlateral thickness that is greater than a fifth lateral thickness of thememory device; and over-etching portions of the second dielectric belowthe first uppermost surface.

Example 6g: A method of fabricating a device structure, the methodcomprising: forming a first conductive interconnect in a firstdielectric in a memory region and a second conductive interconnect inthe first dielectric in a logic region; depositing an etch stop layer onthe first dielectric and on the first conductive interconnect and on thesecond conductive interconnect; forming a first electrode structure onthe first conductive interconnect by a first process comprising: etchinga first opening in the etch stop layer; depositing a first conductivematerial on the first conductive interconnect; planarizing and recessingthe first conductive material; depositing a first conductive hydrogenbarrier layer in the first opening on the first conductive material; andplanarizing the first conductive hydrogen barrier layer to form aconductive hydrogen barrier; forming a memory device by depositing amaterial layer stack comprising a ferroelectric material or aparaelectric material on the first electrode structure and etching thematerial layer stack; depositing a second dielectric comprising anamorphous greater than 90% film density hydrogen barrier material on thememory device and on the etch stop layer; etching and removing thesecond dielectric from the logic region and depositing a thirddielectric comprising a first less than 90% film density material;etching the third dielectric to form a first via opening and exposingthe second conductive interconnect; filling the first via opening with afirst one or more conductive materials to form a via structure;depositing a fourth dielectric comprising a second less than 90% filmdensity material on the third dielectric and on the via structure;forming a trench opening in the fourth dielectric and exposing the viastructure; depositing a second one or more conductive materials in thetrench opening on the via structure to form a metal line; forming asecond electrode structure on the memory device by a second processcomprising: forming a hanging trench in the fourth dielectric andexposing the third dielectric; forming a mask on a portion of thehanging trench, the mask providing a second opening that exposes aportion of the second dielectric; etching the second dielectric throughthe second opening to form a second via opening, the second via openingexposing the memory device; depositing a second conductive hydrogenbarrier layer on the memory device in the second via opening and in thehanging trench; depositing a third one or more conductive materials onthe second conductive hydrogen barrier layer; and planarizing to form avia electrode in the second via opening and a contact electrode in thehanging trench, on the via electrode.

Example 7g: The method of example 6g, wherein planarizing the firstconductive hydrogen barrier layer to form a conductive hydrogen barriercauses dishing of an uppermost surface of the conductive hydrogenbarrier.

Example 8g: The method of example 7g, wherein depositing the materiallayer stack comprises forming a lower most layer having a contour thatmatches the uppermost surface of the conductive hydrogen barrier.

Example 9g: The method of example 6g, wherein the first electrodestructure comprises a first lateral thickness that is less than a secondlateral thickness of the first electrode structure, and wherein etchingthe material layer stack recesses a portion of the etch stop layer to alevel below an interface between the memory device and second conductivehydrogen barrier layer.

Example 10g: A method of fabricating a device structure, the methodcomprising: forming a first conductive interconnect in a firstdielectric in a memory region and a second conductive interconnect inthe first dielectric in a logic region; depositing an etch stop layer onthe first dielectric and on the first conductive interconnect and on thesecond conductive interconnect; forming an electrode structure on thefirst conductive interconnect by a first process comprising: etching afirst opening in the etch stop layer; depositing a first conductivehydrogen barrier layer in the first opening; and depositing a firstconductive material on the first conductive hydrogen barrier layer;forming a memory device by depositing a material layer stack comprisinga ferroelectric material or a paraelectric material on the electrodestructure and etching the material layer stack; depositing a seconddielectric comprising an amorphous greater than 90% film densityhydrogen barrier material on the memory device and on the etch stoplayer; etching and removing the second dielectric from the logic regionand depositing a third dielectric comprising a less than 90% filmdensity material; performing a planarization of the third dielectric,wherein the planarization forms a first portion of the third dielectricdirectly laterally adjacent to the second dielectric and a secondportion of the third dielectric above the second dielectric; etching thethird dielectric to form a first hanging trench above the secondconductive interconnect; forming a first mask within a portion of thefirst hanging trench; and etching the third dielectric through anopening in the first mask to form a first via opening; depositing aliner layer in the first via opening, in the first hanging trench and onan uppermost surface of the third dielectric; depositing a secondconductive material on the liner layer in the first via opening, and inthe first hanging trench; planarizing to remove the second conductivematerial and the liner layer from above the third dielectric and forminga via structure in the first via opening and a metal line in the firsthanging trench; etching the third dielectric and forming a secondhanging trench opening in the third dielectric and exposing the seconddielectric; forming a second mask within a portion of the second hangingtrench; etching the second dielectric through an opening in the secondmask to form a second via opening; depositing a second conductivehydrogen barrier layer on at least a portion of an uppermost surface ofthe memory device in the second via opening and in the second hangingtrench; depositing one or more layers of conductive material on thesecond conductive hydrogen barrier layer; and planarizing to form a viaelectrode in the second via opening and a contact electrode in thesecond hanging trench, on the via electrode.

Example 11g: The method of example 10g, wherein etching the thirddielectric to form the first hanging trench further comprises etching toa level that is substantially co-planar with an uppermost surface of thesecond dielectric.

Example 1h: A device comprising a first region, the first regioncomprising: a first conductive interconnect within a first dielectric ina first level; a second level above the first level, the second levelcomprising: an electrode structure on at least a portion of the firstconductive interconnect, the first electrode structure comprising: afirst conductive hydrogen barrier layer; and a first conductive materialadjacent to the first conductive hydrogen barrier layer; an insulatorlayer laterally surrounding the electrode structure; a memory device onleast a portion of the first electrode structure, the memory devicecomprising a ferroelectric material or a paraelectric material; a seconddielectric spanning the first region, the second dielectric comprisingan amorphous, greater than 90% film density hydrogen barrier material,wherein the memory device is directly adjacent to and embedded withinthe second dielectric; a third dielectric comprising a first less than90% film density material on the second dielectric, the third dielectricwithin a third level above the second level; a via electrode structureon at least a portion of the memory device, the second electrodestructure comprising: a second conductive hydrogen barrier layercomprising a lateral portion on the memory device and substantiallyvertical portions at opposite ends of the lateral portion, wherein thelateral portion and the substantially vertical portions are configuredas a cup; and a second conductive material in contact with the secondconductive hydrogen barrier layer; and wherein the via electrodestructure further comprises a first portion adjacent to the seconddielectric and a second portion adjacent to the third dielectric; and asecond region adjacent to the first region, the second regioncomprising: a fourth dielectric comprising dielectric comprising asecond less than 90% film density material directly adjacent to thesecond dielectric and below the third dielectric; a second conductiveinterconnect within the first level; a third conductive interconnectwithin the third level, wherein the third dielectric extends over thefourth dielectric and wherein the third dielectric laterally surroundsthe third conductive interconnect; and a via structure coupled betweenthe second conductive interconnect and the third conductiveinterconnect, wherein at least a first portion of the via structure isadjacent to the insulator layer.

Example 2h: The device of example 1h, wherein sidewalls of the secondelectrode structure are tapered, wherein the first portion is above thesecond portion, and wherein the first portion is wider than the secondportion.

Example 3h: The device of example 1h, wherein the first portion and thesecond portion have a same lateral thickness.

Example 4h: The device of example 1h, wherein sidewalls of the secondelectrode structure are tapered, wherein the first portion is above thesecond portion, and wherein the first portion is wider than the secondportion.

Example 5h: The device of example 1h wherein the second conductivematerial further comprises: a first conductive fill material; and afirst liner layer between the first conductive fill material and thesecond conductive hydrogen barrier layer.

Example 6h: The device of example 1h wherein the electrode structure isa first electrode structure, the memory device is a first memory deviceand the device structure further comprises: a second memory devicelaterally separated from the first memory device; a third conductiveinterconnect below the second memory device; a second electrodestructure directly between the third conductive interconnect and thesecond memory device; a second via electrode structure on the secondmemory device; and a bridge structure coupled between and in contactwith the first via electrode structure and second via electrodestructure, the bridge structure comprising a third conductive material,wherein an uppermost surface of the third conductive material isco-planar with an uppermost surface of the second conductive material.

Example 7h: The device of example 6h, wherein the bridge structurefurther comprises a third conductive hydrogen barrier layer between thethird conductive material and the second conductive hydrogen barrierlayer.

Example 8h: The device of example 7h wherein the third conductivematerial further comprises: a second conductive fill material; and asecond liner layer between the second conductive fill material and thethird conductive hydrogen barrier layer.

Example 9h: The device of example 8h wherein the second via electrodecomprises the second conductive hydrogen barrier layer, wherein thethird conductive hydrogen barrier layer extends on the second dielectricand is contact with the second conductive hydrogen barrier layer of thesecond via electrode.

Example 10h: The device of example 9h wherein the first conductivehydrogen barrier layer comprises one of TiAlN, with greater than 30atomic percent AN, TaN with greater than 30 atomic percent N₂, TiSiNwith greater than 20 atomic percent SiN, TaC, TiC, W_(C), WN,carbonitrides of Ta, Ti or W, TiO, Ti₂O, WO₃, SnO₂, ITO, IGZO, ZO orMETGLAS series of alloys, wherein the second conductive hydrogen barrierlayer comprises one of TiAlN, with greater than 30 atomic percent AlN,TaN with greater than 30 atomic percent N₂, TiSiN with greater than 20atomic percent SiN, TaC, TiC, W_(C), WN, carbonitrides of Ta, Ti or W,TiO, Ti₂O, WO₃, SnO₂, ITO, IGZO, ZO or METGLAS series of alloys andwherein the third conductive hydrogen barrier layer comprises one ofTiAlN, with greater than 30 atomic percent AlN, TaN with greater than 30atomic percent N₂, TiSiN with greater than 20 atomic percent SiN, TaC,TiC, WC, WN, carbonitrides of Ta, Ti or W, TiO, Ti₂O, WO₃, SnO₂, ITO,IGZO, ZO or METGLAS series of alloys.

Example 11h: The device of example 6h, wherein the first conductivehydrogen barrier layer and the second conductive hydrogen barrier layercomprise different materials.

Example 12h: A device comprising: a first region comprising: a pluralityof first conductive interconnects within a first level; and a secondlevel above the first level, the second level comprising: a plurality ofmemory devices above a respective first conductive interconnect in theplurality of first conductive interconnects; an electrode structurecoupled between a respective ferroelectric memory device in theplurality of ferroelectric memory devices and the respective firstconductive interconnect in the plurality of first conductiveinterconnects, the electrode structure comprising: a first conductivehydrogen barrier layer; and a first conductive material adjacent to thefirst conductive hydrogen barrier layer; a second dielectric spanningthe first region, the second dielectric comprising an amorphous, greaterthan 90% film density hydrogen barrier material, wherein the pluralityof memory devices are directly adjacent to and embedded within thesecond dielectric; a third dielectric comprising a first less than 90%film density material on the second dielectric, the third dielectricwithin a third level above the second level; a plurality of viaelectrode structures, wherein a respective via electrode of theplurality of via electrode structures is on at least a portion of theindividual ones of the plurality of memory devices, the respective viaelectrode structure comprising: a second conductive hydrogen barrierlayer comprising a lateral portion on individual ones of the pluralityof memory devices memory device and substantially vertical portions atopposite ends of the lateral portion, wherein the lateral portion andthe substantially vertical portions are configured as a cup; and asecond conductive material in contact with the second conductivehydrogen barrier layer; wherein the respective via electrode structurefurther comprises a first portion adjacent to the second dielectric anda second portion adjacent to the third dielectric; a bridge structurecoupled between and in contact with adjacent ones of the respective viaelectrode structures and second via electrode, the bridge structurecomprising: a third conductive hydrogen barrier; and a third conductivematerial on the third conductive hydrogen barrier layer, wherein anuppermost surface of the third conductive material is co-planar with anuppermost surface of the second conductive material; and a second regionadjacent to the first region, the second region comprising: a fourthdielectric comprising dielectric comprising a second less than 90% filmdensity material directly adjacent to the second dielectric and belowthe third dielectric; a second conductive interconnect within the firstlevel; a third conductive interconnect within the third level, whereinthe third dielectric extends over the fourth dielectric and wherein thethird dielectric laterally surrounds the third conductive interconnect;and a via structure coupled between the second conductive interconnectand the third conductive interconnect, wherein at least a first portionof the via structure is adjacent to the insulator layer.

Example 13h: The device of example 12h, wherein a lowermost surface ofthe bridge structure is on an uppermost surface of the seconddielectric.

Example 14h: The device of example 12h, a lowermost surface of thebridge structure is below a level of an uppermost surface of the seconddielectric.

Example 15h: The device of example 12h, wherein the respective viaelectrode has a lateral thickness that is greater than a lateralthickness of the individual ones of the plurality of memory devices.

Example 16h: A system comprising: a processor; a communication interfacecommunicatively coupled to the processor; and a memory coupled to theprocessor, wherein the memory comprises bit-cells, wherein one of thebit-cell includes a first region comprising a first conductiveinterconnect within a first dielectric in a first level; a second levelabove the first level, the second level comprising: an electrodestructure on at least a portion of the first conductive interconnect,the first electrode structure comprising: a first conductive hydrogenbarrier layer; and a first conductive material adjacent to the firstconductive hydrogen barrier layer; an insulator layer laterallysurrounding the electrode structure; a memory device on least a portionof the first electrode structure, the memory device comprising aferroelectric material or a paraelectric material; a second dielectricspanning the first region, the second dielectric comprising anamorphous, greater than 90% film density hydrogen barrier material,wherein the memory device is directly adjacent to and embedded withinthe second dielectric; a third dielectric comprising a first less than90% film density material on the second dielectric, the third dielectricwithin a third level above the second level; a via electrode structureon at least a portion of the memory device, the second electrodestructure comprising: a second conductive hydrogen barrier layercomprising a lateral portion on the memory device and substantiallyvertical portions at opposite ends of the lateral portion, wherein thelateral portion and the substantially vertical portions are configuredas a cup; and a second conductive material in contact with the secondconductive hydrogen barrier layer; and wherein the via electrodestructure further comprises a first portion adjacent to the seconddielectric and a second portion adjacent to the third dielectric; and asecond region adjacent to the first region, the second regioncomprising: a fourth dielectric comprising dielectric comprising asecond less than 90% film density material directly adjacent to thesecond dielectric and below the third dielectric; a second conductiveinterconnect within the first level; a third conductive interconnectwithin the third level, wherein the third dielectric extends over thefourth dielectric and wherein the third dielectric laterally surroundsthe third conductive interconnect; and a via structure coupled betweenthe second conductive interconnect and the third conductiveinterconnect, wherein at least a first portion of the via structure isadjacent to the insulator layer.

What is claimed is:
 1. A method of fabricating a device structure, themethod comprising: forming a first conductive interconnect in a firstdielectric in a memory region and a second conductive interconnect inthe first dielectric in a logic region; depositing an etch stop layer onthe first dielectric and on the first conductive interconnect and on thesecond conductive interconnect; forming an electrode structure on thefirst conductive interconnect by a first process comprising: etching afirst opening in the etch stop layer; depositing a first conductivehydrogen barrier layer in the first opening; and depositing a firstconductive material on the first conductive hydrogen barrier layer;forming a memory device by depositing a material layer stack comprisinga ferroelectric material or a paraelectric material on the electrodestructure and etching the material layer stack; depositing a seconddielectric comprising an amorphous, greater than 90% film densityhydrogen barrier material on the memory device and on the etch stoplayer; forming a via electrode on the memory device by a second processcomprising: forming a second opening in the second dielectric;depositing a second conductive hydrogen barrier layer on at least aportion of a first uppermost surface of the memory device in the secondopening; and depositing a second conductive material on the secondconductive hydrogen barrier layer; etching and removing the seconddielectric from the logic region and depositing a third dielectriccomprising a less than 90% film density material; forming a hangingtrench over the second conductive interconnect; forming a third openingin the third dielectric and in the etch stop layer; and depositing aconductive material in the third opening and in the hanging trench toform a via structure on the second conductive interconnect and a metalline on the via structure.
 2. The method of claim 1, wherein depositingthe material layer stack comprises: depositing the ferroelectricmaterial, comprising: one of bismuth ferrite (BFO) with a first dopingmaterial wherein the first doping material is one of lanthanum orelements from lanthanide series of periodic table; lead zirconiumtitanate (PZT) or PZT with a second doping material, wherein the seconddoping material is one of La or Nb; a relaxor ferroelectric materialwhich includes one of lead magnesium niobate (PMN), lead magnesiumniobate-lead titanate (PMN-PT), lead lanthanum zirconate titanate(PLZT), lead scandium niobate (PSN), barium titanium-bismuth zincniobium tantalum (BT-BZNT), or Barium titanium-barium strontium titanium(BT-BST); a perovskite material which includes one of: BaTiO₃, PbTiO3,KNbO3, or NaTaO3; a hexagonal ferroelectric which includes one of: YMnO3or LuFeO3; hexagonal ferroelectrics of a type h-RMnO3, where R is a rareearth element which includes one of: cerium (Ce), dysprosium (Dy),erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum(La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm),samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), ytterbium(Yb), or yttrium (Y); Hafnium (Hf), Zirconium (Zr), Aluminum (Al),Silicon (Si), their oxides or their alloyed oxides; Hafnium oxides asHf1-x Ex O_(y), where E can be Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si,Sr, Sn, Zr, or Y; Al(1-x)Sc(x)N, Ga(1-x)Sc(x)N, Al(1-x)Y(x)N orAl(1-x-y)Mg(x)Nb(y)N, y doped HfO2, where x includes one of: Al, Ca, Ce,Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y, wherein ‘y’ is a fraction;niobate type compounds LiNbO3, LiTaO3, lithium iron tantalum oxyfluoride, barium strontium niobate, sodium barium niobate, or potassiumstrontium niobate; or an improper ferroelectric material which includesone of: [PTO/STO]n or [LAO/STO]n, where ‘n’ is between 1 and 100; ordepositing the paraelectric material comprising SrTiO3, Ba(x)Sr(y)TiO3HfZrO2, Hf—Si—O, La-substituted PbTiO3, or a PMN-PT based relaxorferroelectrics.
 3. The method of claim 1, wherein etching the firstopening comprises forming the first opening with a first lateralthickness that is greater than a second lateral thickness of the firstconductive interconnect, and wherein etching the material layer stackfurther comprises forming the memory device having a third lateralthickness that is less than the first lateral thickness.
 4. The methodof claim 3, wherein depositing the first conductive hydrogen barrierlayer comprises utilizing a first atomic layer deposition process toblanket deposit the first conductive hydrogen barrier layer on the firstconductive interconnect and on sidewalls of the etch stop layer to forma conductive hydrogen barrier layer having a lateral portion andsubstantially vertical portions connected to the lateral portion.
 5. Themethod of claim 4, wherein depositing the first conductive hydrogenbarrier layer comprises using the first atomic layer deposition processto deposit a material comprising TiAlN, with greater than 30 atomicpercent AN, TaN with greater than 30 atomic percent N₂, TiSiN withgreater than 20 atomic percent SiN, TaC, TiC, W_(C), WN, carbonitridesof Ta, Ti or W, or TiO, Ti₂O, WO₃, SnO₂, ITO, IGZO, ZO, or METGLASseries of alloys.
 6. The method of claim 5, wherein forming theelectrode structure further comprises performing a chemical mechanicalplanarization process to form the electrode structure that issubstantially comprised of the first conductive material with aperipheral boundary comprising the first conductive hydrogen barrierlayer, and wherein the first conductive material is planarized to form asecond uppermost surface that is substantially co-planar with a thirduppermost surface of the etch stop layer.
 7. The method of claim 1,wherein depositing the second dielectric comprises utilizing a secondatomic layer deposition process to deposit a material comprising atransition metal and oxygen, including Al_(x)O_(y), HfO_(x), ZrO_(x),TaO_(x) or TiO_(x).
 8. The method of claim 1, wherein depositing thesecond dielectric comprises utilizing a plurality of processingoperations where a first operation comprises utilizing a physical vapordeposition (PVD) process to deposit a material comprising a transitionmetal and oxygen, such as but not limited to Al_(x)O_(y), HfO_(x),ZrO_(x), TaO_(x), TiO_(x), AlSiO_(x), HfSiO_(x), TaSiO_(x), or atransition metal and nitrogen, such as, but not limited to AlN, ZrN, orHfN, wherein the PVD process deposits the second dielectric to athickness of less than 5 nm, and further wherein the PVD process doesnot expose the memory device to hydrogen.
 9. The method of claim 8,further comprises a third atomic layer deposition or a chemical vapordeposition process to deposit a material comprising Al_(x)O_(y),HfO_(x), ZrO_(x), TaO_(x), TiO_(x), AlSiO_(x), HfSiO_(x), TaSiO_(x),AlN, ZrN, or HfN.
 10. The method of claim 1, wherein forming the viaelectrode comprising forming an opening comprises a fourth lateralthickness that is less than a fifth lateral thickness of the memorydevice.
 11. The method of claim 1, wherein forming the via electrodefurther comprises: forming an opening comprising a sixth lateralthickness that is greater than a seventh lateral thickness of the memorydevice; and over-etching portions of the second dielectric below thefirst uppermost surface.
 12. The method of claim 1, wherein depositingthe second conductive hydrogen barrier layer comprises depositing on anentire first uppermost surface, and on sidewall of a top electrode ofthe memory device.
 13. A method of fabricating a device structure, themethod comprising: forming a first conductive interconnect in a firstdielectric in a memory region and a second conductive interconnect inthe first dielectric in a logic region; depositing an etch stop layer onthe first dielectric and on the first conductive interconnect and on thesecond conductive interconnect; forming an electrode structure on thefirst conductive interconnect by a first process comprising: etching afirst opening in the etch stop layer; depositing a first conductivematerial in the first opening; depositing a first conductive hydrogenbarrier layer on the first conductive material; and planarizing thefirst conductive hydrogen barrier layer; forming a memory device bydepositing a material layer stack comprising a ferroelectric material ora paraelectric material on the electrode structure and etching thematerial layer stack; depositing a second dielectric comprising anamorphous, greater than 90% film density hydrogen barrier material onthe memory device and on the etch stop layer; forming a via electrode onthe memory device by a second process comprising: forming a secondopening in the second dielectric; depositing a second conductivehydrogen barrier layer on at least a portion of an uppermost surface ofthe memory device in the second opening; and depositing a secondconductive material on the second conductive hydrogen barrier layer;etching and removing the second dielectric from the logic region anddepositing a third dielectric comprising a less than 90% film densitymaterial; forming a hanging trench over the second conductiveinterconnect; forming a third opening in the third dielectric and in theetch stop layer; and depositing a conductive material in the thirdopening and in the hanging trench to form a via structure on the secondconductive interconnect and a metal line on the via structure.
 14. Themethod of claim 13, wherein depositing the material layer stackcomprises depositing the ferroelectric material, the ferroelectricmaterial comprising: one of bismuth ferrite (BFO) with a first dopingmaterial, wherein the first doping material is one of lanthanum orelements from lanthanide series of periodic table; lead zirconiumtitanate (PZT) or PZT with a second doping material, wherein the seconddoping material is one of La or Nb; a relaxor ferroelectric materialwhich includes one of lead magnesium niobate (PMN), lead magnesiumniobate-lead titanate (PMN-PT), lead lanthanum zirconate titanate(PLZT), lead scandium niobate (PSN), barium titanium-bismuth zincniobium tantalum (BT-BZNT), or Barium titanium-barium strontium titanium(BT-BST); a perovskite material which includes one of: BaTiO₃, PbTiO3,KNbO3, or NaTaO3; a hexagonal ferroelectric which includes one of: YMnO3or LuFeO3; hexagonal ferroelectrics of a type h-RMnO3, where R is a rareearth element which includes one of: cerium (Ce), dysprosium (Dy),erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum(La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm),samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), ytterbium(Yb), or yttrium (Y); and Hafnium (Hf), Zirconium (Zr), Aluminum (Al),Silicon (Si), their oxides or their alloyed oxides; Hafnium oxides asHf1-x Ex O_(y), where E includes one of Al, Ca, Ce, Dy, Er, Gd, Ge, La,Sc, Si, Sr, Sn, Zr, or Y; Al(1-x)Sc(x)N, Ga(1-x)Sc(x)N, Al(1-x)Y(x)N orAl(1-x-y)Mg(x)Nb(y)N, y doped HfO2, where x includes one of: Al, Ca, Ce,Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y, wherein ‘y’ is a fraction;niobate type compounds LiNbO3, LiTaO3, lithium iron tantalum oxyfluoride, barium strontium niobate, sodium barium niobate, or potassiumstrontium niobate; or an improper ferroelectric material which includesone of: [PTO/STO]n or [LAO/STO]n, where ‘n’ is between 1 and 100, ordepositing the paraelectric material comprising SrTiO3, Ba(x)Sr(y)TiO3 ,HfZrO2, Hf—Si—O, La-substituted PbTiO3, or a PMN-PT based relaxorferroelectrics.
 15. The method of claim 14, wherein etching the firstopening comprises forming the first opening with a first lateralthickness that is greater than a second lateral thickness of the firstconductive interconnect, and wherein etching the material layer stackfurther comprises forming the memory device having a third lateralthickness that is greater than the first lateral thickness.
 16. Themethod of claim 14, wherein depositing the first conductive hydrogenbarrier layer comprises utilizing an atomic layer deposition process toblanket deposit the first conductive hydrogen barrier layer on the firstconductive interconnect and on sidewalls of the etch stop layer to forma conductive hydrogen barrier layer having a lateral portion andsubstantially vertical portions, and wherein depositing the firstconductive hydrogen barrier layer comprising using the atomic layerdeposition process to deposit a material comprising TiAlN, with greaterthan 30 atomic percent AN, TaN with greater than 30 atomic percent N₂,TiSiN with greater than 20 atomic percent SiN, TaC, TiC, WC, WN,carbonitrides of Ta, Ti or W, or TiO, Ti₂O, WO₃, SnO₂, ITO, IGZO, ZO, orMETGLAS series of alloys.
 17. The method of claim 14, wherein etchingthe first opening comprises forming the first opening with a firstlateral thickness that is less than a second lateral thickness of thefirst conductive interconnect, and wherein etching the material layerstack further comprises forming the memory device having a third lateralthickness that is greater than the first lateral thickness.
 18. Themethod of claim 15, wherein etching the material layer stack furtherrecesses the etch stop layer below an interface between the memorydevice and the etch stop layer, and wherein depositing the seconddielectric further comprises depositing below the interface.
 19. Amethod of fabricating a device structure, the method comprising:depositing an etch stop layer on a first conductive interconnect formedwithin a first dielectric in a memory region and on a second conductiveinterconnect formed within the first dielectric in an adjacent logicregion; forming an electrode structure comprising a first conductivehydrogen barrier layer on the first conductive interconnect and a firstconductive material on the first conductive hydrogen barrier layer;forming a memory device by depositing a material layer stack on theelectrode structure and etching the material layer stack, whereinetching to form the memory device further comprises recessing portionsof the first conductive material; depositing a second dielectriccomprising an amorphous and greater than 90% film density hydrogenbarrier material on the memory device; forming a via electrodecomprising a second conductive hydrogen barrier layer on the memorydevice, wherein the second conductive hydrogen barrier layer is incontact with an uppermost surface of the memory device; etching andremoving the second dielectric from the adjacent logic region anddepositing a third dielectric comprising a less than 90% film densitymaterial; forming a hanging trench over the second conductiveinterconnect; forming an opening in the third dielectric and in the etchstop layer; depositing liner layer in the opening and in the hangingtrench, the liner layer extending continuously from an uppermost surfaceof the second conductive interconnect to an uppermost surface of thethird dielectric; depositing a fill metal in the opening and in thehanging trench on the liner layer; and planarizing to remove the fillmetal and the liner layer from above the third dielectric to form a viastructure on the second conductive interconnect and a metal line on thevia structure.
 20. The method of claim 19, wherein recessing portions ofthe first conductive material forms a first surface of the firstconductive material adjacent the memory device that is below anuppermost surface of the etch stop layer, wherein depositing the seconddielectric comprises utilizing an atomic layer deposition process todeposit a material comprising a transition metal and oxygen, includingAl_(x)O_(y), HfO_(x), ZrO_(x), TaO_(x) or TiO_(x), and whereindepositing the second dielectric further comprises depositing below aninterface between the first conductive material and the memory device.